Epitaxial growth mechanism of pulsed laser deposited AlN films on Si (111) substrates

CrystEngComm ◽  
2014 ◽  
Vol 16 (15) ◽  
pp. 3148-3154 ◽  
Author(s):  
Hui Yang ◽  
Wenliang Wang ◽  
Zuolian Liu ◽  
Weijiang Yang ◽  
Guoqiang Li
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Growth Mechanism ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Si Substrate ◽  
Dislocation Formation

The epitaxial growth mechanism and causes of dislocation formation in AlN films on a Si substrate by pulsed laser deposition (PLD) are comprehensively proposed.

Epitaxial growth and its mechanism of GaN films on nitrided LiGaO2(001) substrates by pulsed laser deposition

CrystEngComm ◽  
2015 ◽  
Vol 17 (5) ◽  
pp. 1073-1079 ◽  
Author(s):  
Weijia Yang ◽  
Wenliang Wang ◽  
Zuolian Liu ◽  
Yunhao Lin ◽  
Shizhong Zhou ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Growth Mechanism ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality

High-quality GaN films have been grown on nitrided LiGaO2 substrates by pulsed laser deposition. The effect of nitridation on the properties of the GaN films and the growth mechanism of GaN films grown on nitrided LiGaO2 substrates by pulsed laser deposition have also been systemically studied.

Epitaxial growth and ferroelectric properties of SrBi2Nb2O9(115) thin films grown by pulsed-laser deposition on epitaxial Pt(111) electrode

2003 ◽  
Vol 83 (26) ◽  
pp. 5500-5502 ◽  
Author(s):  
J.-R. Duclère ◽  
M. Guilloux-Viry ◽  
V. Bouquet ◽  
A. Perrin ◽  
E. Cattan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition

Epitaxial growth of Ba1−xKxBiO3thin films by pulsed‐laser deposition

1993 ◽  
Vol 62 (4) ◽  
pp. 414-416 ◽  
Author(s):  
D. P. Norton ◽  
J. D. Budai ◽  
B. C. Chakoumakos ◽  
R. Feenstra
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition

Epitaxial growth of Al-doped ZnO thin films grown by pulsed laser deposition

2002 ◽  
Vol 420-421 ◽  
pp. 107-111 ◽  
Author(s):  
H Kim ◽  
J.S Horwitz ◽  
S.B Qadri ◽  
D.B Chrisey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Doped Zno

Epitaxial growth of optical Ba2NaNb5O15waveguide film by pulsed laser deposition

1994 ◽  
Vol 65 (16) ◽  
pp. 1995-1997 ◽  
Author(s):  
J. M. Liu ◽  
F. Zhang ◽  
Z. G. Liu ◽  
S. N. Zhu ◽  
L. J. Shi ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition

Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Yttrium Oxide ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

Epitaxial growth of AlN thin films on silicon (111) substrates by pulsed laser deposition

1995 ◽  
Vol 77 (9) ◽  
pp. 4724-4728 ◽  
Author(s):  
R. D. Vispute ◽  
J. Narayan ◽  
Hong Wu ◽  
K. Jagannadham
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Laser Deposition

Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Hrtem Observation ◽  
Device Applications ◽  
Ferroelectric Hysteresis

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

Research of anti-reflective and protective DLC Film on Si Substrate by Femto-second Pulsed Laser Deposition

2010 ◽  
Vol 22 (8) ◽  
pp. 1705-1708 ◽  
Author(s):  
王淑云 Wang Shuyun ◽  
郭延龙 Guo Yanlong ◽  
刘旭 Liu Xu ◽  
曹海源 Cao Haiyuan ◽  
王会升 Wang Huisheng ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Si Substrate ◽  
Dlc Film
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