Adjustment of conformation change and charge trapping in ion-doped polymers to achieve ternary memory performance

2013 ◽  
Vol 1 (47) ◽  
pp. 7883 ◽  
Author(s):  
Dongwei He ◽  
Hao Zhuang ◽  
Haifeng Liu ◽  
Hongzhang Liu ◽  
Hua Li ◽  
...  
Keyword(s):  
Memory Performance ◽  
Charge Trapping ◽  
Conformation Change ◽  
Doped Polymers

Through conformation change and charge trapping to achieve binary/ternary rewritable memory performance of carbazole-based organic molecules

2021 ◽  
Author(s):  
Yanhua Yang ◽  
Jinwen Ma ◽  
Xiujuan He ◽  
Gaozhang Gou ◽  
Huiwu Mao ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Organic Compounds ◽  
Organic Molecules ◽  
Memory Performance ◽  
Charge Trapping ◽  
Conformation Change ◽  
The Relationship ◽  
Memory Characteristics

To better understand the relationship between molecular structure and memory characteristics, two carbazole-based organic compounds (Cz-2Ph3F 6FDA and Cz-2TPA 6FDA) with different ratios of electron-donating and electron-withdrawing are designed and...

Charge Storage Characteristics of Si-Rich Silicon Nitride and the Effect of Tunneling Thickness on Nonvolatile Memory Performance

2011 ◽  
Vol 181-182 ◽  
pp. 307-311
Author(s):  
Hong Hanh Nguyen ◽  
Ngoc Son Dang ◽  
Van Duy Nguyen ◽  
Kyungsoo Jang ◽  
Kyunghyun Baek ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Nonvolatile Memory ◽  
Memory Performance ◽  
Charge Trapping ◽  
Oxide Thickness ◽  
Memory Window ◽  
Charge Storage ◽  
Operating Voltage ◽  
Silicon Clusters ◽  
Retention Characteristics

Nonvolatile memory (NVM) devices with nitride-nitride-oxynitride (NNO) stack structure using Si-rich silicon nitride (SiNx) as charge trapping layer on glass substrate were fabricated. Amorphous silicon clusters existing in the Si-rich SiNxlayer enhance the charge storage capacity of the devices. Low temperature poly-silicon (LTPS) technology, plasma-assisted oxidation/nitridation method to form a uniform ultra-thin tunneling layer, and an optimal Si-rich SiNxcharge trapping layer were used to fabricate NNO NVM devices with different tunneling thickness 2.3, 2.6 and 2.9 nm. The increase memory window, lower voltage operation but little scarifying in retention characteristics of nitride trap NVM devices had been accomplished by reducing the tunnel oxide thickness. The fabricated NVM devices with 2.9 nm tunneling thickness shows excellent electrical properties, such as a low threshold voltage, a high ON/OFF current ratio, a low operating voltage of less than ±9 V and a large memory window of 2.7 V, which remained greater than 72% over a period of 10 years.

scholarly journals MoS2-based Charge-trapping synaptic device with electrical and optical modulated conductance

Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2475-2486 ◽  
Author(s):  
Min Zhang ◽  
Zehui Fan ◽  
Xixi Jiang ◽  
Hao Zhu ◽  
Lin Chen ◽  
...  
Keyword(s):  
Artificial Intelligence ◽  
Visual Processing ◽  
Nonvolatile Memory ◽  
High Performance ◽  
Memory Performance ◽  
Incident Light ◽  
Charge Trapping ◽  
Long Term Potentiation ◽  
Neuromorphic System

AbstractThe synapse is one of the fundamental elements in human brain performing functions such as learning, memorizing, and visual processing. The implementation of synaptic devices to realize neuromorphic computing and sensing tasks is a key step to artificial intelligence, which, however, has been bottlenecked by the complex circuitry and device integration. We report a high-performance charge-trapping memory synaptic device based on two-dimensional (2D) MoS2 and high-k Ta2O5–TiO2 (TTO) composite to build efficient and reliable neuromorphic system, which can be modulated by both electrical and optical stimuli. Significant and essential synaptic behaviors including short-term plasticity, long-term potentiation, and long-term depression have been emulated. Such excellent synaptic behaviors originated from the good nonvolatile memory performance due to the high density of defect states in the engineered TTO composite. The 2D synaptic device also exhibits effective switching by incident light tuning, which further enables pattern recognition with accuracy rate reaching 100%. Such experimental demonstration paves a robust way toward a multitask neuromorphic system and opens up potential applications in future artificial intelligence and sensing technology.

Effects of oxygen conditions during deposition on memory performance of metal/HfO2/SiO2/Si structured charge trapping memory

2019 ◽  
Vol 6 (8) ◽  
pp. 086306
Author(s):  
Bo Zhang ◽  
Qihang Gao ◽  
Boping Wang ◽  
Hong Wang ◽  
Chao Lu ◽  
...  
Keyword(s):  
Memory Performance ◽  
Charge Trapping ◽  
Oxygen Conditions ◽  
Charge Trapping Memory

MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing

2012 ◽  
Vol 177 (16) ◽  
pp. 1501-1508 ◽  
Author(s):  
Joel Molina ◽  
Rafael Ortega ◽  
Wilfrido Calleja ◽  
Pedro Rosales ◽  
Carlos Zuniga ◽  
...  
Keyword(s):  
Low Temperature ◽  
Memory Performance ◽  
Charge Trapping ◽  
Low Temperature Annealing

Charge Trapping in Molecularly Doped Polymers

1998 ◽  
Vol 37 (Part 1, No. 4A) ◽  
pp. 1945-1949 ◽  
Author(s):  
P. M. Borsenberger ◽  
E. H. Magin ◽  
S. A. Visser
Keyword(s):  
Charge Trapping ◽  
Doped Polymers
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