Ag2S–AgInS2: p–n junction heteronanostructures with quasi type-II band alignment

2014 ◽  
Vol 50 (23) ◽  
pp. 3074-3077 ◽  
Author(s):  
Riya Bose ◽  
Goutam Manna ◽  
Santanu Jana ◽  
Narayan Pradhan

A single nanostructure p–n junction diode has been fabricated colloidally by synthesizing a heterostructure comprising of p-type Ag2S and n-type AgInS2, where the quasi type-II band alignment of the constituents further improve charge separation.

2021 ◽  
Vol 9 ◽  
Author(s):  
Razvan Krause ◽  
Mariana Chávez-Cervantes ◽  
Sven Aeschlimann ◽  
Stiven Forti ◽  
Filippo Fabbri ◽  
...  

Efficient light harvesting devices need to combine strong absorption in the visible spectral range with efficient ultrafast charge separation. These features commonly occur in novel ultimately thin van der Waals heterostructures with type II band alignment. Recently, ultrafast charge separation was also observed in monolayer WS2/graphene heterostructures with type I band alignment. Here we use time- and angle-resolved photoemission spectroscopy to show that ultrafast charge separation also occurs at the interface between bilayer WS2 and graphene indicating that the indirect band gap of bilayer WS2 does not affect the charge transfer to the graphene layer. The microscopic insights gained in the present study will turn out to be useful for the design of novel optoelectronic devices.


2019 ◽  
Vol 7 (13) ◽  
pp. 7430-7436 ◽  
Author(s):  
Kai Wu ◽  
Huanhuan Ma ◽  
Yunzhi Gao ◽  
Wei Hu ◽  
Jinlong Yang

Tellurene and TMDs show desirable type II band alignment for constructing highly-efficient heterojunction solar cells with strong charge separation and enhanced sunlight absorption.


RSC Advances ◽  
2016 ◽  
Vol 6 (15) ◽  
pp. 12561-12570 ◽  
Author(s):  
Li-Chia Tien ◽  
Jhih-Lin Shih

Type-II α-In2S3/In2O3 nanowire heterostructures exhibit significant photo-induced carrier life time improvement and visible-light-driven photocatalytic activity.


2017 ◽  
Vol 5 (26) ◽  
pp. 13400-13410 ◽  
Author(s):  
Congxin Xia ◽  
Juan Du ◽  
Wenqi Xiong ◽  
Yu Jia ◽  
Zhongming Wei ◽  
...  

Type-II band alignment, a suitable direct gap (1.519 eV), superior optical-absorption (∼105) and a broad spectrum make the GeSe/SnS heterobilayer a promising material for photovoltaic applications.


Nanoscale ◽  
2020 ◽  
Vol 12 (10) ◽  
pp. 6037-6046 ◽  
Author(s):  
Bing-Xin Zhou ◽  
Shuang-Shuang Ding ◽  
Yan Wang ◽  
Xiao-Rui Wang ◽  
Wei-Qing Huang ◽  
...  

Ti–N covalently bridged 0D/0D QCN/a-TiO2/r-TiO2 T-II/T-II heterojunctions for enhanced photocatalytic water splitting.


1990 ◽  
Vol 216 ◽  
Author(s):  
R. M. Biefeld ◽  
B. T. Cunningham ◽  
S. R. Kurtz ◽  
J. R. Wendt

ABSTRACTInfrared absorption and photoluminescence have been demonstrated for InAs1-xSbx/InSb strained-layer superlattices (SLS's) in the 8-15 μm region for As content less than 20%. This extended infrared activity is due to the type II heterojunction band offset in these SLS's. The preparation of the first MOCVD grown p-n junction diode was achieved by using dimethyltellurium as an n-type dopant. Several factors, such as background doping and dopant profiles affect the performance of this device. InSb diodes have been prepared using tetraethyltin. The resulting current-voltage characteristics are improved over those of diodes grown previously using dimethyltellurium. Doping levels of 8x1015 to 5x1018cm−3 and mobilities of 6.7x104 to 1.1x104 cm2/Vs have been measured for Sn doped InSb. SLS diode structures have been prepared using Sn and Cd as the dopants. Structures prepared with p-type buffer layers are more reproducible.


2021 ◽  
Vol 23 (6) ◽  
pp. 3963-3973
Author(s):  
Jianxun Song ◽  
Hua Zheng ◽  
Minxia Liu ◽  
Geng Zhang ◽  
Dongxiong Ling ◽  
...  

The structural, electronic and optical properties of a new vdW heterostructure, C2N/g-ZnO, with an intrinsic type-II band alignment and a direct bandgap of 0.89 eV at the Γ point are extensively studied by DFT calculations.


Nanoscale ◽  
2014 ◽  
Vol 6 (15) ◽  
pp. 9148-9156 ◽  
Author(s):  
Joyashish Debgupta ◽  
Ramireddy Devarapalli ◽  
Shakeelur Rahman ◽  
Manjusha V. Shelke ◽  
Vijayamohanan K. Pillai

Heterojunction (type II) of self standing, vertically aligned CdSe NTs (n-type) with electrodeposited Cu2O (p-type) exhibits excellent photoresponse, resulting from enhanced absorption of light and faster transport of photogenerated charge carriers by CdSe NTs.


Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 717
Author(s):  
Hassan Algadi ◽  
Ahmad Umar ◽  
Hasan Albargi ◽  
Turki Alsuwian ◽  
Sotirios Baskoutas

A low-cost and simple drop-casting method was used to fabricate a carbon nanodot (C-dot)/all-inorganic perovskite (CsPbBr3) nanosheet bilayer heterojunction photodetector on a SiO2/Si substrate. The C-dot/perovskite bilayer heterojunction photodetector shows a high performance with a responsivity (R) of 1.09 A/W, almost five times higher than that of a CsPbBr3-based photodetector (0.21 A/W). In addition, the hybrid photodetector exhibits a fast response speed of 1.318/1.342 µs and a highly stable photocurrent of 6.97 µA at 10 V bias voltage. These figures of merits are comparable with, or much better than, most reported perovskite heterojunction photodetectors. UV–Vis absorption and photoluminescent spectra measurements reveal that the C-dot/perovskite bilayer heterojunction has a band gap similar to the pure perovskite layer, confirming that the absorption and emission in the bilayer heterojunction is dominated by the top layer of the perovskite. Moreover, the emission intensity of the C-dot/perovskite bilayer heterojunction is less than that of the pure perovskite layer, indicating that a significant number of charges were extracted by the C-dot layer. The studied band alignment of the C-dots and perovskites in the dark and under emission reveals that the photodetector has a highly efficient charge separation mechanism at the C-dot/perovskite interface, where the recombination rate between photogenerated electrons and holes is significantly reduced. This highly efficient charge separation mechanism is the main reason behind the enhanced performance of the C-dot/perovskite bilayer heterojunction photodetector.


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