The Preparation of InAsSb/InSb SLS and InSb Photodiodes by MOCVD

1990 ◽  
Vol 216 ◽  
Author(s):  
R. M. Biefeld ◽  
B. T. Cunningham ◽  
S. R. Kurtz ◽  
J. R. Wendt
Keyword(s):  
Infrared Absorption ◽  
Buffer Layers ◽  
Band Offset ◽  
Type Ii ◽  
Current Voltage ◽  
Background Doping ◽  
Current Voltage Characteristics ◽  
Junction Diode ◽  
Strained Layer Superlattices ◽  
P Type

ABSTRACTInfrared absorption and photoluminescence have been demonstrated for InAs1-xSbx/InSb strained-layer superlattices (SLS's) in the 8-15 μm region for As content less than 20%. This extended infrared activity is due to the type II heterojunction band offset in these SLS's. The preparation of the first MOCVD grown p-n junction diode was achieved by using dimethyltellurium as an n-type dopant. Several factors, such as background doping and dopant profiles affect the performance of this device. InSb diodes have been prepared using tetraethyltin. The resulting current-voltage characteristics are improved over those of diodes grown previously using dimethyltellurium. Doping levels of 8x1015 to 5x1018cm−3 and mobilities of 6.7x104 to 1.1x104 cm2/Vs have been measured for Sn doped InSb. SLS diode structures have been prepared using Sn and Cd as the dopants. Structures prepared with p-type buffer layers are more reproducible.

Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

1999 ◽  
Vol 607 ◽  
Author(s):  
S. Kato ◽  
T. Horikoshi ◽  
T. Ohkubo ◽  
T. Iida ◽  
Y. Takano
Keyword(s):  
Silicon Germanium ◽  
Bulk Crystals ◽  
Temperature Dependent ◽  
Alloy Scattering ◽  
Self Diffusion ◽  
Pn Junction ◽  
Current Voltage ◽  
Vertical Bridgman ◽  
Current Voltage Characteristics ◽  
P Type

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

The Current‐Voltage Characteristics of a Photoelectrochemical Cell Using p‐Type Porous Si

1985 ◽  
Vol 132 (2) ◽  
pp. 346-349 ◽  
Author(s):  
Nobuyoshi Koshida ◽  
Masahiro Nagasu ◽  
Takashi Sakusabe ◽  
Yuji Kiuchi
Keyword(s):  
Photoelectrochemical Cell ◽  
Porous Si ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

Asymmetric current-voltage characteristics in type-II superconductors

1994 ◽  
Vol 49 (13) ◽  
pp. 9244-9247 ◽  
Author(s):  
Xiuguang Jiang ◽  
P. J. Connolly ◽  
S. J. Hagen ◽  
C. J. Lobb
Keyword(s):  
Type Ii ◽  
Type Ii Superconductors ◽  
Current Voltage ◽  
Current Voltage Characteristics

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

Self-consistent modeling of the current–voltage characteristics of resonant tunneling structures with type II heterojunctions

1997 ◽  
Vol 82 (5) ◽  
pp. 2421-2426 ◽  
Author(s):  
I. Lapushkin ◽  
A. Zakharova ◽  
V. Gergel ◽  
H. Goronkin ◽  
S. Tehrani
Keyword(s):  
Resonant Tunneling ◽  
Type Ii ◽  
Current Voltage ◽  
Self Consistent ◽  
Current Voltage Characteristics

Exciton binding energies and the valence-band offset in mixed type-I–type-II strained-layer superlattices

1992 ◽  
Vol 46 (3) ◽  
pp. 1557-1563 ◽  
Author(s):  
P. Peyla ◽  
Y. Merle d’Aubigné ◽  
A. Wasiela ◽  
R. Romestain ◽  
H. Mariette ◽  
...  
Keyword(s):  
Valence Band ◽  
Mixed Type ◽  
Binding Energies ◽  
Band Offset ◽  
Type I ◽  
Type Ii ◽  
Valence Band Offset ◽  
Strained Layer ◽  
Strained Layer Superlattices
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