Electrochemical preparation of vertically aligned, hollow CdSe nanotubes and their p–n junction hybrids with electrodeposited Cu2O

Nanoscale ◽  
2014 ◽  
Vol 6 (15) ◽  
pp. 9148-9156 ◽  
Author(s):  
Joyashish Debgupta ◽  
Ramireddy Devarapalli ◽  
Shakeelur Rahman ◽  
Manjusha V. Shelke ◽  
Vijayamohanan K. Pillai
Keyword(s):  
Charge Carriers ◽  
Type Ii ◽  
Electrochemical Preparation ◽  
Enhanced Absorption ◽  
Absorption Of Light ◽  
Vertically Aligned ◽  
P Type

Heterojunction (type II) of self standing, vertically aligned CdSe NTs (n-type) with electrodeposited Cu2O (p-type) exhibits excellent photoresponse, resulting from enhanced absorption of light and faster transport of photogenerated charge carriers by CdSe NTs.

Enhancing electronic and optical properties of monolayer MoSe2via a MoSe2/blue phosphorene heterobilayer

2019 ◽  
Vol 21 (28) ◽  
pp. 15760-15766 ◽  
Author(s):  
Huabing Shu ◽  
Ying Wang ◽  
Minglei Sun
Keyword(s):  
Optical Properties ◽  
Charge Carriers ◽  
Type Ii ◽  
Electronic And Optical Properties ◽  
Effective Separation ◽  
P Type ◽  
Blue Phosphorene

Type-II heterostructures are appealing for application in optoelectronics due to their effective separation of photogenerated charge carriers.

Photoassisted Electrodeposition of Cuprous Oxide Thin Films

2021 ◽  
Vol 105 (1) ◽  
pp. 441-452
Author(s):  
Katharina Mairhofer ◽  
Bettina Kipper-Pires ◽  
Gerhard Leitner ◽  
Guenter Fafilek
Keyword(s):  
Thin Films ◽  
Cuprous Oxide ◽  
Sem Analysis ◽  
Sufficient Energy ◽  
Tenfold Increase ◽  
Absorption Of Light ◽  
Additional Illumination ◽  
Type Semiconductor ◽  
P Type ◽  
Deposited Films

Well-defined cuprous oxide (Cu2O) thin films can be electrodeposited from an electrolyte containing copper (II) sulfate, lactic acid and sodium hydroxide. As Cu2O is a p-type semiconductor, it is possible to accelerate the process through illumination with light of sufficient energy (>2.1eV). Cyclic voltammetry and transient potentiostatic measurements were performed in a three-electrode setup with copper metalized wafers as a working electrode. Illumination was performed through the electrolyte, therefore absorption of light by the electrolyte had to be taken into consideration. Potentiostatic measurements with a blue LED as a light source have shown an tenfold increase in layer thickness in comparison to depositions without additional illumination. The deposited films were investigated with SEM analysis.

Manganese-Doped CdGeAs2, ZnGeAs2 and ZnSiAs2 Chalcopyrites: A New Advanced Materials for Spintronics

2010 ◽  
Vol 168-169 ◽  
pp. 31-34 ◽  
Author(s):  
A.S. Morozov ◽  
L.A. Koroleva ◽  
D.M. Zashchirinskii ◽  
T.M. Khapaeva ◽  
S.F. Marenkin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Charge Carriers ◽  
Advanced Materials ◽  
Temperature Dependences ◽  
P Type ◽  
Mn Doped ◽  
Curie Temperatures ◽  
Exchange And Superexchange Interactions

Based on the Mn-doped chalcopyrites CdGeAs2, ZnGeAs2 and ZnSiAs2, new dilute magnetic semiconductors with the p-type conductivity were produced. Magnetization, electrical resistivity and Hall effect of these compositions were studied. Their temperature dependences of magnetization are similar in form in spite of a complicated character, which is controlled by the concentration and mobility of the charge carriers. Thus, for T < 15 K, these curves are characteristic of superparamagnets and for T > 15 K, of a frustrated ferromagnet. In compounds with Zn these two states are diluted by a spinglass-like state. This specific feature is ascribed to attraction of Mn ions occupying neighboring sites and to competition between the carrier-mediated exchange and superexchange interactions. The Curie temperatures of these compounds are above room temperature. These are the highest Curie temperatures in the AIIBIVCV2:Mn systems.

Type II Dislocation Loops and their Effect on Strain in Ion Implanted Silicon as Studied by High Resolution X-ray Diffraction

1995 ◽  
Vol 378 ◽  
Author(s):  
R. H. Thompson ◽  
V. Krishnamoorthy ◽  
J. Liu ◽  
K. S. Jones
Keyword(s):  
High Resolution ◽  
Type Ii ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
Empirical Constant ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Measured Strain ◽  
P Type

AbstractP-type (100) silicon wafers were implanted with 28Si+ ions at an energy of 50 keV and to doses of 1 × 1015, 5 × 1015 and 1 × 1016 cm−2, respectively, and annealed in a N2 ambient at temperatures ranging from 700°C to 1000°C for times ranging from 15 minutes to 16 hours. The resulting microstructure consisted of varying distributions of Type II end of range dislocation loops. The size distribution of these loops was quantified using plan-view transmission electron microscopy and the strain arising from these loops was investigated using high resolution x-ray diffraction. The measured strain values were found to be constant in the loop coarsening regime wherein the number of atoms bound by the loops remained a constant. Therefore, an empirical constant of 7.7 × 10−12 interstitial/ppm of strain was evaluated to relate the number of interstitials bound by these dislocation loops and the strain. This value was used successfully in estimating the number of interstitials bound by loops at the various doses studied provided the annealing conditions were such that the loop microstructure was in the coarsening or dissolution regime.

P-Type II-VI Compound Semiconductor Thin Films Grown by Pulsed Laser Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
W. P. Shen ◽  
H. S. Kwok
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Type Ii ◽  
New Approach ◽  
Li Doping ◽  
Semiconductor Thin Films ◽  
In Doping ◽  
P Type

AbstractIn this paper the results on p-type ZnS, ZnSe, CdS and CdSe thin films grown by pulsed laser deposition will be discussed. these films were deposited on GaAs substrates. Li-doping has been shown to be effective in producing p-type II-VI thin films, while in-doping is excellent for n-type CdS and CdSe thin films. No post-annealing process was used. these preliminary results suggest a possible new approach through pulsed laser deposition to solve the doping problem of II-VI compound semiconductors.

Modulation waves of charge carriers in n- and p-type semiconductor layers

2011 ◽  
Vol 45 (2) ◽  
pp. 192-197 ◽  
Author(s):  
T. T. Mnatsakanov ◽  
M. E. Levinshtein ◽  
A. G. Tandoev ◽  
S. N. Yurkov
Keyword(s):  
Charge Carriers ◽  
Type Semiconductor ◽  
P Type
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