Stability of thin film glasses of toluene and ethylbenzene formed by vapor deposition: an in situ nanocalorimetric study

2010 ◽  
Vol 12 (44) ◽  
pp. 14693-14698 ◽  
Author(s):  
Edgar Leon-Gutierrez ◽  
Alfonso Sepúlveda ◽  
Gemma Garcia ◽  
Maria Teresa Clavaguera-Mora ◽  
Javier Rodríguez-Viejo
Keyword(s):  
Thin Film ◽  
Vapor Deposition

scholarly journals Correction: Stability of thin film glasses of toluene and ethylbenzene formed by vapor deposition: an in situ nanocalorimetric study

2016 ◽  
Vol 18 (11) ◽  
pp. 8244-8245 ◽  
Author(s):  
Edgar Leon-Gutierrez ◽  
Alfonso Sepúlveda ◽  
Gemma Garcia ◽  
Maria Teresa Clavaguera-Mora ◽  
Javier Rodríguez-Viejo
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chem Phys ◽  
Phys Chem Chem Phys

Correction for ‘Stability of thin film glasses of toluene and ethylbenzene formed by vapor deposition: an in situ nanocalorimetric study’ by Edgar Leon-Gutierrez et al., Phys. Chem. Chem. Phys., 2010, 12, 14693–14698.

In situ plasma diagnostics for chemical vapor deposition of nano-carbon thin film materials

2003 ◽  
Vol 69 (2-4) ◽  
pp. 446-451 ◽  
Author(s):  
A.N. Obraztsov ◽  
A.A. Zolotukhin ◽  
A.O. Ustinov ◽  
A.P. Volkov ◽  
Yu. Svirko ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Plasma Diagnostics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Thin Film ◽  
Nano Carbon

In Situ, Real-Time Curvature Imaging During Chemical Vapor Deposition

2003 ◽  
Vol 795 ◽  
Author(s):  
David A. Boyd ◽  
Ashok B. Tripathi ◽  
Mohamed El-Naggar ◽  
David G. Goodwin
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Real Time ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Stress ◽  
Stress Distributions ◽  
Gradient Sensing ◽  
Full Field

AbstractCoherent Gradient Sensing (CGS) is a full-field optical technique that produces real-time images of macroscopic wafer curvature, which, for thin films, can be related to stress through Stoney's equation. Here we describe the use of CGS as an in situ diagnostic to observe film stress distributions during chemical vapor deposition. The application of this method to measure oxygen diffusion rates in thin film YBa2Cu3O6+δ(YBCO) and stresses in thin film PbxBa1-xTiO3 (PBT) under chemical vapor deposition (CVD) conditions will be discussed.

Investigation of the Temperature-Dependent Surface Morphology of p-Sexiphenyl Thin Films on KCl(001)

2001 ◽  
Vol 708 ◽  
Author(s):  
E.J. Kintzel ◽  
E.S. Gillman ◽  
J.G. Skofronick ◽  
S.A. Safron ◽  
D.-M. Smilgies
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Vacuum Chamber ◽  
Base Pressure ◽  
Temperature Dependent ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Morphologies

ABSTRACTInvestigation into the temperature dependence of the surface morphology of a thin film of p-sexiphenyl (p-6P) on KCl(001) was carried out by atomic force microscopy (AFM). An individual p-6P film was prepared by vapor deposition at a base pressure of ∼1x10-8 mbar onto a KCl(001) surface which was maintained at 323 K during deposition. The AFM was carried out in a separate vacuum chamber, in situ, at a base pressure of ∼1x10-6 mbar. The p-6P film was cooled and maintained at discrete temperatures in the range from 294 K to 128 K as AFM measurements were performed. Similar surface morphologies are observed for film temperatures maintained at 294, 264, and 227 K, and 188 and 128 K during the AFM measurements. AFM images for the first set of film temperatures (294 - 227 K) indicate the presence of block-like islands of p-6P, with well-defined crystallite boundaries. AFM images of the films in the second set (188 and 128 K) indicate the presence of triangular wedge-shaped structures of p-6P preferentially aligned nearly in the direction of the [110]KCl. Comparison of these wedge-shaped structures at the indicated film temperatures reveals they are rotated by approximately 180° with respect to each other. Subsequent images of the surface of the p-6P film captured again at 294 K, after the final 128 K temperature study was completed, revealed the same surface features found for the initial 294 K film temperature.

Observation of Film Growth Phenomena Using Micromachined Structures

1996 ◽  
Vol 441 ◽  
Author(s):  
F. DiMeo ◽  
R. E. Cavicchi ◽  
S. Sernancik ◽  
J. S. Suchle ◽  
N. H. Tea ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Thin Film Growth ◽  
Materials Processing ◽  
Semiconducting Oxides

AbstractA method of studying thin film growth and materials processing using micromachined Si-based structures is presented. The microsubstrate platforms (called “microhotplates”) allow temperature control during deposition, andin situmonitoring of the electrical properties of connected coatings. The efficiency of the approach is amplified when multiple. Independentlyoperated elements are used in array configurations. Illustrations here involve chemical vapor deposition of semiconducting oxides, but the methodology can be employed to investigate the growth of other classes of materials as well.

Performance of thin film Transistors on Unhydrogenated In-Situ Doped Polysilicon films Obtained by Solid Phase Crystallization

1997 ◽  
Vol 471 ◽  
Author(s):  
K. Mourgues ◽  
F. Raoult ◽  
L. Pichon ◽  
T. Mohammed-Brahim ◽  
D. Briand ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Pressure Chemical ◽  
Polysilicon Films ◽  
The Difference

ABSTRACTLow Temperature Unhydrogenated in-situ doped polysilicon Thin Film Transistors (LTUTFT) are made through two types of four-mask aluminium gate process. Silicon layers are elaborated by a Low Pressure Chemical Vapor Deposition (LPCVD) method and crystallized by a thermal annealing. Source and drain regions are in-situ doped. An Atmospheric Pressure Chemical Vapor Deposition (APCVD) silicon dioxide ensures the gate insulation. Two structures A and B are fabricated, the difference is that for sample B the undoped/doped polysilicon layer interface is suppressed.The structure of the polysilicon films is studied using Transmission Electron Microscopy (TEM) and Current-Voltage characteristics of both types of TFTs indicate electrical quality of the polysilicon films.The best electrical properties are obtained with the B type TFTs: a low threshold voltage (VT=1.2V), a low subthreshold slope (0.7 V/dec), a high On/Off state current ratio (107) for a drain voltage VDS= 1V, and a very high field effect mobility (≥100 cm2 /Vs). It is worth to notice that these good results are obtained without hydrogenation.

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