Facile Molecular Approach to Transparent Thin-Film Field-Effect Transistors with High-Performance Using New Homo- and Heteroleptic Indium(III)–Tin(II) Single-Source Precursors

2012 ◽  
Vol 24 (11) ◽  
pp. 2078-2090 ◽  
Author(s):  
Kerim Samedov ◽  
Yilmaz Aksu ◽  
Matthias Driess
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Single Source ◽  
Molecular Approach ◽  
Single Source Precursors

High-Performance, Stable Organic Thin-Film Field-Effect Transistors Based on Bis-5‘-alkylthiophen-2‘-yl-2,6-anthracene Semiconductors

2005 ◽  
Vol 127 (8) ◽  
pp. 2406-2407 ◽  
Author(s):  
Hong Meng ◽  
Fangping Sun ◽  
Marc B. Goldfinger ◽  
Gary D. Jaycox ◽  
Zhigang Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Thin Film

High-performance metal-semiconductor field effect transistors from thin-film polycrystalline diamond

1998 ◽  
Vol 7 (2-5) ◽  
pp. 565-568 ◽  
Author(s):  
H.J. Looi ◽  
L.Y.S. Pang ◽  
Y. Wang ◽  
M.D. Whitfield ◽  
R.B. Jackman
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Polycrystalline Diamond

Thin film field-effect transistors of 2,6-diphenyl anthracene (DPA)

2015 ◽  
Vol 51 (59) ◽  
pp. 11777-11779 ◽  
Author(s):  
Jie Liu ◽  
Huanli Dong ◽  
Zongrui Wang ◽  
Deyang Ji ◽  
Changli Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Synthesis And Characterization ◽  
Design Synthesis

The present work showed the design, synthesis and characterization of a high performance anthracene-based semiconductor.

Biphenyl end-capped bithiazole co-oligomers for high performance organic thin film field effect transistors

2016 ◽  
Vol 52 (27) ◽  
pp. 4926-4929 ◽  
Author(s):  
Kazuaki Oniwa ◽  
Hiromasa Kikuchi ◽  
Thangavel Kanagasekaran ◽  
Hidekazu Shimotani ◽  
Susumu Ikeda ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Thin Film

Two new regiospecific biphenyl end-capped bithiazole co-oligomers, BP2Tz(in) and BP2Tz(out), showed high hole mobilities of 3.5 and 0.4 cm2 V−1 s−1, respectively, in thin film field effect transistors.

High performance n-channel thin-film field-effect transistors based on angular-shaped naphthalene tetracarboxylic diimides

2013 ◽  
Vol 14 (11) ◽  
pp. 2859-2865 ◽  
Author(s):  
Shan-Ci Chen ◽  
Dhanavel Ganeshan ◽  
Dongdong Cai ◽  
Qingdong Zheng ◽  
Zhigang Yin ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors

High-performance C60 and picene thin film field-effect transistors with conducting polymer electrodes in bottom contact structure

2009 ◽  
Vol 10 (3) ◽  
pp. 432-436 ◽  
Author(s):  
Yumiko Kaji ◽  
Ryoji Mitsuhashi ◽  
Xuesong Lee ◽  
Hideki Okamoto ◽  
Takashi Kambe ◽  
...  
Keyword(s):  
Thin Film ◽  
Conducting Polymer ◽  
Field Effect ◽  
High Performance ◽  
Contact Structure ◽  
Field Effect Transistors ◽  
Bottom Contact ◽  
Polymer Electrodes

Thin Film Diamond Field Effect Transistors For High Power Applications

1997 ◽  
Vol 483 ◽  
Author(s):  
Hui Jin Looi ◽  
Lisa Ys Pang ◽  
Richard B. Jackman
Keyword(s):  
Thin Film ◽  
High Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Schottky Diodes ◽  
Film Material ◽  
Near Surface ◽  
Suitable Material ◽  
P Type

AbstractEarly predictions that diamond would be a suitable material for high performance, high power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin film material. In this paper commercially accessible polycrystalline thin film diamond has been turned p-type by the incorporation of near surface hydrogen. Schottky diodes and metal-semiconductor FETs (MESFETs) have been fabricated using this approach which display unprecedented performance levels; diodes with a rectification ratio > 106, leakage currents < l nA, no indication of reverse bias breakdown at 100V and an ideality factor of 1.1 have been made. Simple MESFET structures that are capable of withstanding VDS values of 100V with low leakage and current saturation (pinch-off) characteristics have also been fabricated. Predictions based upon experiments performed on these devices suggest that optimised device structures will be capable of operation at power levels up to 20 W/mm, implying that thin film diamond may after all be an interesting material for power applications.

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