Insights into the chemical vapor deposition of GaN using the single-source precursor Me2N(CH2)3Ga(N3)2: matrix isolation of Ga(N3)

2001 ◽  
pp. 911-912 ◽  
Author(s):  
Jens Müller ◽  
Sabine Bendix
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Matrix Isolation ◽  
Chemical Vapor ◽  
Single Source ◽  
Single Source Precursor

Aerosol-assisted chemical vapor deposition of WS2 from the single source precursor WS(S2)(S2CNEt2)2

2017 ◽  
Vol 53 (55) ◽  
pp. 7728-7731 ◽  
Author(s):  
Nathaniel E. Richey ◽  
Chandler Haines ◽  
Jessica L. Tami ◽  
Lisa McElwee-White
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Source ◽  
Single Source Precursor

WS(S2)(S2CNEt2)2 is a single source precursor for deposition of nanostructured WS2 above 350 °C.

Hafnium diboride thin films by chemical vapor deposition from a single source precursor

2005 ◽  
Vol 23 (6) ◽  
pp. 1619-1625 ◽  
Author(s):  
Sreenivas Jayaraman ◽  
Yu Yang ◽  
Do Young Kim ◽  
Gregory S. Girolami ◽  
John R. Abelson
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Source ◽  
Hafnium Diboride ◽  
Single Source Precursor

Parametric study on non-vacuum chemical vapor deposition of CuInS2 from a single-source precursor

2005 ◽  
Vol 116 (3) ◽  
pp. 403-408 ◽  
Author(s):  
Christopher V. Kelly ◽  
Michael H.-C. Jin ◽  
Kulbinder K. Banger ◽  
Jeremiah S. McNatt ◽  
John E. Dickman ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Parametric Study ◽  
Chemical Vapor ◽  
Single Source ◽  
Single Source Precursor

scholarly journals Accessing new 2D semiconductors with optical band gap: synthesis of iron-intercalated titanium diselenide thin films via LPCVD

RSC Advances ◽  
2018 ◽  
Vol 8 (40) ◽  
pp. 22552-22558 ◽  
Author(s):  
Clara Sanchez-Perez ◽  
Caroline E. Knapp ◽  
Ross H. Colman ◽  
Carlos Sotelo-Vazquez ◽  
Raija Oilunkaniemi ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Single Source ◽  
2D Semiconductors ◽  
Single Source Precursor ◽  
Pressure Chemical

Fe-doped TiSe2 thin-films were synthesized via low pressure chemical vapor deposition (LPCVD) of a single source precursor: [Fe(η5-C5H4Se)2Ti(η5-C5H5)2]2 (1).

Chemical vapor deposition of pyrolytic boron nitride ceramics from single source precursor

2017 ◽  
Vol 43 (13) ◽  
pp. 10020-10025 ◽  
Author(s):  
Shitao Gao ◽  
Bin Li ◽  
Changrui Zhang ◽  
Duan Li ◽  
Rongjun Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Source ◽  
Pyrolytic Boron Nitride ◽  
Single Source Precursor ◽  
Nitride Ceramics
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