Sub-nanosecond threshold-switching dynamics and set process of In3SbTe2 phase-change memory devices

Shivendra Kumar Pandey; Anbarasu Manivannan

doi:10.1063/1.4953196

Sub-nanosecond threshold-switching dynamics and set process of In3SbTe2 phase-change memory devices

Applied Physics Letters ◽

10.1063/1.4953196 ◽

2016 ◽

Vol 108 (23) ◽

pp. 233501 ◽

Cited By ~ 9

Author(s):

Shivendra Kumar Pandey ◽

Anbarasu Manivannan

Keyword(s):

Phase Change ◽

Phase Change Memory ◽

Memory Devices ◽

Threshold Switching ◽

Switching Dynamics ◽

Change Memory

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Threshold switching dynamics of pseudo-binary GeTe–Sb2Te3 phase change memory devices

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab2ac3 ◽

2019 ◽

Vol 52 (37) ◽

pp. 375301 ◽

Cited By ~ 2

Author(s):

Nishant Saxena ◽

Anbarasu Manivannan

Keyword(s):

Phase Change ◽

Phase Change Memory ◽

Memory Devices ◽

Threshold Switching ◽

Switching Dynamics ◽

Change Memory

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Threshold switching via electric field induced crystallization in phase-change memory devices

Applied Physics Letters ◽

10.1063/1.4729551 ◽

2012 ◽

Vol 100 (25) ◽

pp. 253105 ◽

Cited By ~ 19

Author(s):

Jorge A. Vázquez Diosdado ◽

Peter Ashwin ◽

Krisztian I. Kohary ◽

C. David Wright

Keyword(s):

Electric Field ◽

Phase Change ◽

Phase Change Memory ◽

Memory Devices ◽

Threshold Switching ◽

Induced Crystallization ◽

Change Memory

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Mechanism of Threshold Switching in Chalcogenide Phase Change Memory Devices

2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop ◽

10.1109/nvsmw.2007.4290579 ◽

2007 ◽

Cited By ~ 11

Author(s):

I. Karpov ◽

S. Savransky ◽

V. Karpov

Keyword(s):

Phase Change ◽

Phase Change Memory ◽

Memory Devices ◽

Threshold Switching ◽

Change Memory

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Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices

Scientific Reports ◽

10.1038/srep37868 ◽

2016 ◽

Vol 6 (1) ◽

Cited By ~ 18

Author(s):

Krishna Dayal Shukla ◽

Nishant Saxena ◽

Suresh Durai ◽

Anbarasu Manivannan

Keyword(s):

Phase Change ◽

Phase Change Memory ◽

Speed Limit ◽

Time Resolved ◽

Threshold Switching ◽

Switching Dynamics ◽

Change Memory

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A weak electric field-assisted ultrafast electrical switching dynamics in In3SbTe2 phase-change memory devices

AIP Advances ◽

10.1063/1.4994184 ◽

2017 ◽

Vol 7 (7) ◽

pp. 075206 ◽

Cited By ~ 1

Author(s):

Shivendra Kumar Pandey ◽

Anbarasu Manivannan

Keyword(s):

Electric Field ◽

Phase Change ◽

Phase Change Memory ◽

Weak Electric Field ◽

Memory Devices ◽

Electrical Switching ◽

Switching Dynamics ◽

Change Memory

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Comment on “Threshold switching via electric field induced crystallization in phase change memory devices” [Appl. Phys. Lett. 100, 253105 (2012)]

Applied Physics Letters ◽

10.1063/1.4809720 ◽

2013 ◽

Vol 102 (23) ◽

pp. 236101 ◽

Cited By ~ 1

Author(s):

V. G. Karpov ◽

M. Nardone

Keyword(s):

Electric Field ◽

Phase Change ◽

Phase Change Memory ◽

Memory Devices ◽

Threshold Switching ◽

Induced Crystallization ◽

Change Memory

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Response to “Comment on ‘Threshold switching via electric field induced crystallization in phase change memory devices’” [Appl. Phys. Lett. 102, 236101 (2012)]

Applied Physics Letters ◽

10.1063/1.4809722 ◽

2013 ◽

Vol 102 (23) ◽

pp. 236102

Author(s):

J. A. Vazquez Diosdado ◽

P. Ashwin ◽

K. I. Kohary ◽

C. D. Wright

Keyword(s):

Electric Field ◽

Phase Change ◽

Phase Change Memory ◽

Memory Devices ◽

Threshold Switching ◽

Induced Crystallization ◽

Change Memory

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Sub-nanosecond threshold switching dynamics in GeSb2Te4 phase change memory device

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab4c1b ◽

2019 ◽

Vol 53 (2) ◽

pp. 025103 ◽

Cited By ~ 1

Author(s):

Nishant Saxena ◽

Anbarasu Manivannan

Keyword(s):

Phase Change ◽

Phase Change Memory ◽

Memory Device ◽

Threshold Switching ◽

Switching Dynamics ◽

Change Memory

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Electrical switching dynamics in circular and rectangular Ge2Sb2Te5 nanopillar phase change memory devices

Journal of Applied Physics ◽

10.1063/1.3002420 ◽

2008 ◽

Vol 104 (8) ◽

pp. 084507 ◽

Cited By ~ 15

Author(s):

O. Ozatay ◽

B. Stipe ◽

J. A. Katine ◽

B. D. Terris

Keyword(s):

Phase Change ◽

Phase Change Memory ◽

Memory Devices ◽

Electrical Switching ◽

Switching Dynamics ◽

Change Memory

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Field dependent conductivity and threshold switching in amorphous chalcogenides—Modeling and simulations of ovonic threshold switches and phase change memory devices

Journal of Applied Physics ◽

10.1063/5.0027671 ◽

2020 ◽

Vol 128 (23) ◽

pp. 234503

Author(s):

Jake Scoggin ◽

Helena Silva ◽

Ali Gokirmak

Keyword(s):

Phase Change ◽

Phase Change Memory ◽

Memory Devices ◽

Modeling And Simulations ◽

Threshold Switching ◽

Amorphous Chalcogenides ◽

Field Dependent ◽

Change Memory

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