scholarly journals Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Yoshihiro Shimazu ◽  
Mitsuki Tashiro ◽  
Satoshi Sonobe ◽  
Masaki Takahashi
Keyword(s):  
Molybdenum Disulfide ◽  
Environmental Effects ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transfer Characteristics

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors

Sensors ◽  
2017 ◽  
Vol 17 (7) ◽  
pp. 1640 ◽  
Author(s):  
Alex Tseng ◽  
David Lynall ◽  
Igor Savelyev ◽  
Marina Blumin ◽  
Shiliang Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Transfer Characteristics

scholarly journals Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate

AIP Advances ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 065229
Author(s):  
Yanxiao Sun ◽  
Gang Niu ◽  
Wei Ren ◽  
Jinyan Zhao ◽  
Yankun Wang ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Channel Length ◽  
High K ◽  
High K Dielectric

Transfer characteristics and contact resistance in Ni- and Ti-contacted graphene-based field-effect transistors

2013 ◽  
Vol 25 (15) ◽  
pp. 155303 ◽  
Author(s):  
A Di Bartolomeo ◽  
F Giubileo ◽  
L Iemmo ◽  
F Romeo ◽  
S Santandrea ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transfer Characteristics
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