scholarly journals Path of the current flow at the metal contacts of graphene field-effect transistors with distorted transfer characteristics

2014 ◽  
Vol 105 (3) ◽  
pp. 033112 ◽  
Author(s):  
Ryo Nouchi ◽  
Katsumi Tanigaki
Keyword(s):  
Field Effect ◽  
Current Flow ◽  
Field Effect Transistors ◽  
Metal Contacts ◽  
Transfer Characteristics

scholarly journals Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors

Sensors ◽  
2017 ◽  
Vol 17 (7) ◽  
pp. 1640 ◽  
Author(s):  
Alex Tseng ◽  
David Lynall ◽  
Igor Savelyev ◽  
Marina Blumin ◽  
Shiliang Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Transfer Characteristics

Transfer characteristics and contact resistance in Ni- and Ti-contacted graphene-based field-effect transistors

2013 ◽  
Vol 25 (15) ◽  
pp. 155303 ◽  
Author(s):  
A Di Bartolomeo ◽  
F Giubileo ◽  
L Iemmo ◽  
F Romeo ◽  
S Santandrea ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transfer Characteristics

scholarly journals High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

2007 ◽  
Vol 18 (15) ◽  
pp. 155201 ◽  
Author(s):  
Sanghyun Ju ◽  
Kangho Lee ◽  
Myung-Han Yoon ◽  
Antonio Facchetti ◽  
Tobin J Marks ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Ozone Treatment ◽  
Metal Contacts ◽  
Zno Nanowire

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

Focused Ion Beam Exposure of Ultrathin Electron-Beam Resist for Nanoscale Field-Effect Transistor Contacts Formation

2021 ◽  
Vol 26 (5) ◽  
pp. 353-362
Author(s):  
K.A. Tsarik ◽  
Keyword(s):  
Field Effect ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Dielectric Substrate ◽  
Silicon Nanostructures ◽  
Metal Contacts ◽  
Ion Beam Lithography ◽  
Speed Performance ◽  
Optical Electron

The lithographic methods are used to form contacts for nanostructures smaller than 100 nm , in part, e-beam lithography and focused ion beam lithography with the use of electron-sensitive resist. Focused ion beam lithography is characterized by greater susceptibility to resist, high value of backward scattering, proximity effect, and best ratio of speed performance and contrast to exposed elements’ minimal size, compared to e-beam lithography. In this work, a method of ultrathin resist exposure by focused ion beam is developed. Electron-sensitive resist thickness dependence on increase of its toluene dilution was established. It was shown that electron-sensitive resist thinning down to 30 μm based on α-chloro-methacrylate with α-methylstyrene allows the 500-nm gapped metal contacts formation over a span of 30 μm. Silicon nanostructures within metallic nanoscale gap on dielectric substrate have been obtained. The geometry of obtained nanostructures was studied by optical, electron, ion, and probe microscopy. It has been established that it is possible to not use additional alignment keys when nanoscale field-effect transistors are created based on silicon nanostructures.

Simulation of Transfer Characteristics of Dual-Gate Graphene Field-Effect Transistors

2018 ◽  
Vol 20 (11) ◽  
pp. 643-650
Author(s):  
I.I. Abramov ◽  
◽  
N.V. Kolomejtseva ◽  
V.A. Labunov ◽  
I.A. Romanova ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Transfer Characteristics ◽  
Dual Gate
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