scholarly journals Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Tongbo Wei ◽  
Jiankun Yang ◽  
Yang Wei ◽  
Ziqiang Huo ◽  
Xiaoli Ji ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy

CrystEngComm ◽  
2016 ◽  
Vol 18 (40) ◽  
pp. 7690-7695
Author(s):  
Seohwi Woo ◽  
Sangil Lee ◽  
Uiho Choi ◽  
Hyunjae Lee ◽  
Minho Kim ◽  
...  
Keyword(s):  
Chemical Reaction ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

A 2 in.-diameter free-standing m-plane GaN wafer was fabricated through in situ self-separation from m-plane sapphire using HCl chemical reaction etching (HCRE) in hydride vapor-phase epitaxy (HVPE).

Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff

1999 ◽  
Vol 38 (Part 2, No. 3A) ◽  
pp. L217-L219 ◽  
Author(s):  
Michael K. Kelly ◽  
Robert P. Vaudo ◽  
Vivek M. Phanse ◽  
Lutz Görgens ◽  
Oliver Ambacher ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer

2007 ◽  
Vol 253 (18) ◽  
pp. 7423-7428 ◽  
Author(s):  
T.B. Wei ◽  
R.F. Duan ◽  
J.X. Wang ◽  
J.M. Li ◽  
Z.Q. Huo ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

Giant traps on the surface of hydride vapor phase epitaxy-grown free-standing GaN

2006 ◽  
Vol 35 (4) ◽  
pp. 613-617 ◽  
Author(s):  
Z. -Q. Fang ◽  
D. C. Look ◽  
A. Krtschil ◽  
A. Krost ◽  
F. A. Khan ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
Andrey Nikolaev ◽  
Irina Nikitina ◽  
Andrey Zubrilov ◽  
Marina Mynbaeva ◽  
Yuriy Melnik ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Thick Layers

AbstractWe report on AlN wafers fabricated by hydride vapor phase epitaxy (HVPE). AlN thick layers were grown on Si substrates by HVPE. Growth rate was up to 60 microns per hour. After the growth of AlN layers, initial substrates were removed resulting in free-standing AlN wafers. The maximum thickness of AlN layer was about 1 mm. AlN free-standing single crystal wafers with a thickness ranging from 0.05 to 0.8 mm were studied by x-ray diffraction, transmission electron microscopy, optical absorption, and cathodoluminescence.

Raman spectroscopy of GaN nucleation and free-standing layers grown by hydride vapor phase epitaxy on oxidized silicon

2003 ◽  
Vol 83 (4) ◽  
pp. 629-631 ◽  
Author(s):  
E. V. Konenkova ◽  
Yu. V. Zhilyaev ◽  
V. A. Fedirko ◽  
D. R. T. Zahn
Keyword(s):  
Raman Spectroscopy ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing
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