Growth and characterization of plasma-assisted molecular beam epitaxial-grown AlGaN/GaN heterostructures on free-standing hydride vapor phase epitaxy GaN substrates

2005 ◽  
Vol 23 (3) ◽  
pp. 1190 ◽  
Author(s):  
D. F. Storm ◽  
D. S. Katzer ◽  
J. A. Mittereder ◽  
S. C. Binari ◽  
B. V. Shanabrook ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Molecular Beam ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing ◽  
Molecular Beam Epitaxial

Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer

2007 ◽  
Vol 253 (18) ◽  
pp. 7423-7428 ◽  
Author(s):  
T.B. Wei ◽  
R.F. Duan ◽  
J.X. Wang ◽  
J.M. Li ◽  
Z.Q. Huo ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy

2000 ◽  
Vol 44 (12) ◽  
pp. 2225-2232 ◽  
Author(s):  
F Yun ◽  
M.A Reshchikov ◽  
K Jones ◽  
P Visconti ◽  
H Morkoç ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Optical Characterization ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

scholarly journals Characterization of free-standing hydride vapor phase epitaxy GaN

2001 ◽  
Vol 78 (16) ◽  
pp. 2297-2299 ◽  
Author(s):  
J. Jasinski ◽  
W. Swider ◽  
Z. Liliental-Weber ◽  
P. Visconti ◽  
K. M. Jones ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy

CrystEngComm ◽  
2016 ◽  
Vol 18 (40) ◽  
pp. 7690-7695
Author(s):  
Seohwi Woo ◽  
Sangil Lee ◽  
Uiho Choi ◽  
Hyunjae Lee ◽  
Minho Kim ◽  
...  
Keyword(s):  
Chemical Reaction ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

A 2 in.-diameter free-standing m-plane GaN wafer was fabricated through in situ self-separation from m-plane sapphire using HCl chemical reaction etching (HCRE) in hydride vapor-phase epitaxy (HVPE).

Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff

1999 ◽  
Vol 38 (Part 2, No. 3A) ◽  
pp. L217-L219 ◽  
Author(s):  
Michael K. Kelly ◽  
Robert P. Vaudo ◽  
Vivek M. Phanse ◽  
Lutz Görgens ◽  
Oliver Ambacher ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

Growth and characterization of low defect GaN by hydride vapor phase epitaxy

2002 ◽  
Vol 246 (3-4) ◽  
pp. 223-229 ◽  
Author(s):  
Xueping Xu ◽  
R.P Vaudo ◽  
C Loria ◽  
A Salant ◽  
G.R Brandes ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Giant traps on the surface of hydride vapor phase epitaxy-grown free-standing GaN

2006 ◽  
Vol 35 (4) ◽  
pp. 613-617 ◽  
Author(s):  
Z. -Q. Fang ◽  
D. C. Look ◽  
A. Krtschil ◽  
A. Krost ◽  
F. A. Khan ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy

2011 ◽  
Vol 5 (1) ◽  
pp. 011001 ◽  
Author(s):  
Henryk Teisseyre ◽  
Jaroslaw Zbigniew Domagala ◽  
Boleslaw Lucznik ◽  
Anna Reszka ◽  
Bogdan Jerzy Kowalski ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Nonpolar Gan
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