scholarly journals Ultrafast Atomic Layer-by-Layer Oxygen Vacancy-Exchange Diffusion in Double-Perovskite LnBaCo2O5.5+δ Thin Films

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Shanyong Bao ◽  
Chunrui Ma ◽  
Garry Chen ◽  
Xing Xu ◽  
Erik Enriquez ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Double Perovskite ◽  
Atomic Layer ◽  
Layer By Layer ◽  
Exchange Diffusion

Atomic Layer and Unit-Cell Layer Growth of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 Thin Films by Laser Molecular Bean Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
Masaki Kanai ◽  
Tomoji Kawai ◽  
Takuya Matsumoto ◽  
Shichio Kawai
Keyword(s):  
Thin Films ◽  
Diffraction Pattern ◽  
Cell Layer ◽  
Atomic Layer ◽  
High Energy ◽  
Layer Growth ◽  
Unit Cell ◽  
Layer By Layer ◽  
Diffraction Intensity

ABSTRACTThin films of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 are formed by laser molecular beam epitaxy with in-situ reflection high energy electron diffraction observation. The diffraction pattern shows that these materials are formed with layer-by-layer growth. The change of the diffraction intensity as well as the analysis of the total diffraction pattern makes It possible to control the grown of the atomic layer or the unit-cell layer.

Atomic layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry

2002 ◽  
Author(s):  
Yoshishige Tsuchiya ◽  
Masato Endoh ◽  
Masatoshi Kurosawa ◽  
Raymond T. Tung ◽  
Takeo Hattori ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Atomic Layer ◽  
In Situ Monitoring ◽  
Layer By Layer ◽  
Dielectric Thin Films ◽  
High K ◽  
High K Dielectric

scholarly journals B-Site Cation Ordering in Films, Superlattices, and Layer-by-Layer-Grown Double Perovskites

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 734
Author(s):  
Philipp Ksoll ◽  
Christoph Meyer ◽  
Leonard Schüler ◽  
Vladimir Roddatis ◽  
Vasily Moshnyaga
Keyword(s):  
Thin Films ◽  
Perovskite Phase ◽  
Double Perovskite ◽  
Aerosol Deposition ◽  
Physical Vacuum ◽  
Layer By Layer ◽  
Film Properties ◽  
Equilibrium Growth ◽  
Deposition Techniques

The preparation of cation-ordered thin films of correlated oxides is of great interest for both fundamental and applied research. The scientific long-term vision is strongly motivated by the perspective of studying electronic correlations in condensed matter without the presence of chemical or quenched disorder. A promising material platform provides double perovskite A2BB’O6 bulk samples with different types of B/B’ ordering. However, the growth of A- and/or B-site-ordered correlated oxide thin films is known to be a challenging task. In this review, we evaluate the growth of double perovskite A2BB’O6 thin films by means of well-elaborated physical vacuum deposition techniques, such as pulsed laser deposition (PLD) and sputtering and compare them with a close-to-equilibrium growth with the metalorganic aerosol deposition (MAD) technique. The latter was further developed to grow an emergent interfacial double perovskite phase in LaNiO3/LaMnO3 superlattices, and finally, by way of a layer-by-layer route. The growth of La2CoMnO6 films on SrTiO3(111) substrates by sequential deposition of single perovskite layers of LaCoO3/LaMnO3/LaCoO3/… was demonstrated and the film properties were compared to those obtained within the state-of-the art growth mode.

scholarly journals Optical conductivity and superconductivity in highly overdoped La2−xCaxCuO4 thin films

2021 ◽  
Vol 118 (30) ◽  
pp. e2106170118
Author(s):  
Gideok Kim ◽  
Ksenia S. Rabinovich ◽  
Alexander V. Boris ◽  
Alexander N. Yaresko ◽  
Y. Eren Suyolcu ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Conductivity ◽  
Hole Concentration ◽  
Mean Field Theory ◽  
Mean Field ◽  
Atomic Layer ◽  
Structural Disorder ◽  
Solubility Limit ◽  
Layer By Layer ◽  
The Impact

We have used atomic layer-by-layer oxide molecular beam epitaxy to grow epitaxial thin films of La2−xCaxCuO4 with x up to 0.5, greatly exceeding the solubility limit of Ca in bulk systems (x∼0.12). A comparison of the optical conductivity measured by spectroscopic ellipsometry to prior predictions from dynamical mean-field theory demonstrates that the hole concentration p is approximately equal to x. We find superconductivity with Tc of 15 to 20 K up to the highest doping levels and attribute the unusual stability of superconductivity in La2−xCaxCuO4 to the nearly identical radii of La and Ca ions, which minimizes the impact of structural disorder. We conclude that careful disorder management can greatly extend the “superconducting dome” in the phase diagram of the cuprates.

scholarly journals Atomistic Simulations of Plasma-Enhanced Atomic Layer Deposition

Materials ◽  
2019 ◽  
Vol 12 (16) ◽  
pp. 2605 ◽  
Author(s):  
Becker ◽  
Sierka
Keyword(s):  
Thin Films ◽  
Monte Carlo ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Growth ◽  
Layer By Layer ◽  
Surface Oxygen ◽  
Structure Relaxation ◽  
Layer Deposition ◽  
Deposition Step

Plasma-enhanced atomic layer deposition (PEALD) is a widely used, powerful layer-by-layer coating technology. Here, we present an atomistic simulation scheme for PEALD processes, combining the Monte Carlo deposition algorithm and structure relaxation using molecular dynamics. In contrast to previous implementations, our approach employs a real, atomistic model of the precursor. This allows us to account for steric hindrance and overlap restrictions at the surface corresponding to the real precursor deposition step. In addition, our scheme takes various process parameters into account, employing predefined probabilities for precursor products at each Monte Carlo deposition step. The new simulation protocol was applied to investigate PEALD synthesis of SiO2 thin films using the bis-diethylaminosilane precursor. It revealed that increasing the probability for precursor binding to one surface oxygen atom favors amorphous layer growth, a large number of –OH impurities, and the formation of voids. In contrast, a higher probability for precursor binding to two surface oxygen atoms leads to dense SiO2 film growth and a reduction of –OH impurities. Increasing the probability for the formation of doubly bonded precursor sites is therefore the key factor for the formation of dense SiO2 PEALD thin films with reduced amounts of voids and –OH impurities.

Superconducting Multilayer Structures Grown by All-Mbe

1992 ◽  
Vol 275 ◽  
Author(s):  
I. Bozovic ◽  
J. N. Eckstein ◽  
M. E. Klausmeier-Brown ◽  
G. F. Virshup ◽  
K. S. Rails
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Multilayer Structures ◽  
Layer By Layer ◽  
Ultrathin Layers ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Sharp Interfaces

ABSTRACTThin films of various Bi-Sr-Ca-Cu-O (2201, 2212,…, 2–2–11–12) compounds have been synthesized using atomic-layer-by-layer molecular beam epitaxy (ALL-MBE). Single-crystal films with excellent transport properties, smooth surfaces and atomically sharp interfaces in multilayer structures have been obtained. That made it possible to deposit virtually perfect ultrathin layers and superlattices, and fabricate hysteretic Josephson junctions from SIS multilayers.

Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films

2015 ◽  
Vol 3 (24) ◽  
pp. 6291-6300 ◽  
Author(s):  
M. H. Park ◽  
H. J. Kim ◽  
Y. J. Kim ◽  
T. Moon ◽  
K. D. Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Depth Profile ◽  
Conduction Mechanism ◽  
Atomic Layer ◽  
Internal Field ◽  
Vacancy Concentrations

The effects of the internal field and conduction mechanism of carriers in ferroelectric Hf0.5Zr0.5O2 thin films are systematically investigated by controlling the in-depth profile of oxygen vacancy concentrations.

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