Superconducting Multilayer Structures Grown by All-Mbe

1992 ◽  
Vol 275 ◽  
Author(s):  
I. Bozovic ◽  
J. N. Eckstein ◽  
M. E. Klausmeier-Brown ◽  
G. F. Virshup ◽  
K. S. Rails
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Multilayer Structures ◽  
Layer By Layer ◽  
Ultrathin Layers ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Sharp Interfaces

ABSTRACTThin films of various Bi-Sr-Ca-Cu-O (2201, 2212,…, 2–2–11–12) compounds have been synthesized using atomic-layer-by-layer molecular beam epitaxy (ALL-MBE). Single-crystal films with excellent transport properties, smooth surfaces and atomically sharp interfaces in multilayer structures have been obtained. That made it possible to deposit virtually perfect ultrathin layers and superlattices, and fabricate hysteretic Josephson junctions from SIS multilayers.

Epitaxial growth of Cu-Ni Single Crystal Alloys and Multilayers by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
R.P. Burns ◽  
Y.H. Lee ◽  
N.R. Parikh ◽  
J.B. Posthill ◽  
M.J. Mantini ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Substrate Material ◽  
High Reactivity ◽  
Lattice Match ◽  
Single Crystal Films ◽  
Crystal Films

AbstractEpitaxial growth of thin films, alloys, and multilayers from the Cu-Ni system are being explored as a means of fabricating a substrate to lattice match diamond. These single crystal films are superior to commercially available substrate material. Due to the high reactivity of the metal surfaces in atmosphere, all processing must be done under UHV conditions. In vacuo preparation, growth, and analysis of the metals is described.

Epitaxial Silicides

1981 ◽  
Vol 10 ◽  
Author(s):  
R. T. Tung ◽  
J. M. Poate ◽  
J. C. Bean ◽  
J. M. Gibson ◽  
D. C. Jacobson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Molecular Beam ◽  
Ultrahigh Vacuum ◽  
Epitaxial Films ◽  
Semiconductor Heterostructures ◽  
High Quality ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Sharp Interfaces

The formation and structures of epitaxial CoSi2, NiSi2, Pd2 Si and PtSi films on silicon are reviewed. Polycrystalline films of reasonable epitaxial quality can be grown with sharp interfaces on Si(111) by conventional deposition and heating techniques. The interfaces on (100) substrates, however, are faceted. Perfect singlecrystal CoSi2 films can be grown on Si(111) substrates by ultrahigh vacuum techniques using conventional deposition and annealing at about 900°C and molecular beam epitaxy codeposition at about 600°C. The single-crystal films are rotated 180° with respect to the substrate. Novel defect arrays are observed at the interface. Resistivities in epitaxial films are lower than those reported in polycrystalline layers. High quality silicon films can be grown on the silicides to form semiconductor/metal/semiconductor heterostructures.

scholarly journals Strain-induced structural transition in DyBa2Cu3O7−x films grown by atomic layer-by-layer molecular beam epitaxy

2020 ◽  
Vol 117 (7) ◽  
pp. 072601 ◽  
Author(s):  
D. Putzky ◽  
P. Radhakrishnan ◽  
Y. Wang ◽  
P. Wochner ◽  
G. Christiani ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Transition ◽  
Atomic Layer ◽  
Layer By Layer
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