Microwave Properties of Atomic Layer Controlled HTS Thin Films

2006 ◽  
Author(s):  
Chang-Beom Eom
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Microwave Properties

scholarly journals On the Use of MOFs and ALD Layers as Nanomembranes for the Enhancement of Gas Sensors Selectivity

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1552 ◽  
Author(s):  
Weber ◽  
Graniel ◽  
Balme ◽  
Miele ◽  
Bechelany
Keyword(s):  
Thin Films ◽  
Gas Sensors ◽  
Gas Sensing ◽  
Metal Organic Frameworks ◽  
Atomic Layer ◽  
Operational Performance ◽  
Layer Deposition ◽  
Metal Organic ◽  
Further Development ◽  
Different Gases

Improving the selectivity of gas sensors is crucial for their further development. One effective route to enhance this key property of sensors is the use of selective nanomembrane materials. This work aims to present how metal-organic frameworks (MOFs) and thin films prepared by atomic layer deposition (ALD) can be applied as nanomembranes to separate different gases, and hence improve the selectivity of gas sensing devices. First, the fundamentals of the mechanisms and configuration of gas sensors will be given. A selected list of studies will then be presented to illustrate how MOFs and ALD materials can be implemented as nanomembranes and how they can be implemented to improve the operational performance of gas sensing devices. This review comprehensively shows the benefits of these novel selective nanomaterials and opens prospects for the sensing community.

Magnetic and microwave properties of FeNi thin films of different thicknesses deposited onto cyclo olefin copolymer flexible substrates

2021 ◽  
pp. 1-1
Author(s):  
C. M. Madrid Aguilar ◽  
A. V. Svalov ◽  
A. A. Kharlamova ◽  
E. E. Shalygina ◽  
A. Larranaga ◽  
...  
Keyword(s):  
Thin Films ◽  
Microwave Properties ◽  
Flexible Substrates

Atomic Layer Modulation of Multicomponent Thin Films through Combination of Experimental and Theoretical Approaches

2021 ◽  
Author(s):  
Chi Thang Nguyen ◽  
Bonwook Gu ◽  
Taehoon Cheon ◽  
Jeongwoo Park ◽  
Mohammad Rizwan Khan ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Theoretical Approaches

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

Inherently Area‐Selective Atomic Layer Deposition of SiO 2 Thin Films to Confer Oxide Versus Nitride Selectivity

2021 ◽  
pp. 2102556
Author(s):  
Jinseon Lee ◽  
Jeong‐Min Lee ◽  
Hongjun Oh ◽  
Changhan Kim ◽  
Jiseong Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Hafnium Zirconium Oxide Thin Films for CMOS Compatible Pyroelectric Infrared Sensors

2021 ◽  
Vol 6 (1) ◽  
pp. 27
Author(s):  
Clemens Mart ◽  
Malte Czernohorsky ◽  
Kati Kühnel ◽  
Wenke Weinreich
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Cost Effective ◽  
Atomic Layer ◽  
Lead Zirconate ◽  
Temperature Oscillation ◽  
Current Profile ◽  
Infrared Sensors ◽  
Integrated Sensor ◽  
Ferroelectric Hysteresis

Pyroelectric infrared sensors are often based on lead-containing materials, which are harmful to the environment and subject to governmental restrictions. Ferroelectric Hf1−xZrxO2 thin films offer an environmentally friendly alternative. Additionally, CMOS integration allows for integrated sensor circuits, enabling scalable and cost-effective applications. In this work, we demonstrate the deposition of pyroelectric thin films on area-enhanced structured substrates via thermal atomic layer deposition. Scanning electron microscopy indicates a conformal deposition of the pyroelectric film in the holes with a diameter of 500 nm and a depth of 8 μm. By using TiN electrodes and photolithography, capacitor structures are formed, which are contacted via the electrically conductive substrate. Ferroelectric hysteresis measurements indicate a sizable remanent polarization of up to 331 μC cm−2, which corresponds to an area increase of up to 15 by the nanostructured substrate. For pyroelectric analysis, a sinusoidal temperature oscillation is applied to the sample. Simultaneously, the pyroelectric current is monitored. By assessing the phase of the measured current profile, the pyroelectric origin of the signal is confirmed. The devices show sizable pyroelectric coefficients of −475 μC m−2 K−1, which is larger than that of lead zirconate titanate (PZT). Based on the experimental evidence, we propose Hf1−xZrxO2 as a promising material for future pyroelectric applications.

scholarly journals Influence of Substrate Materials on Nucleation and Properties of Iridium Thin Films Grown by ALD

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 173
Author(s):  
Paul Schmitt ◽  
Vivek Beladiya ◽  
Nadja Felde ◽  
Pallabi Paul ◽  
Felix Otto ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Bulk Material ◽  
Atomic Layer ◽  
Substrate Material ◽  
Fused Silica ◽  
Silicon Wafers ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Influence Of Substrate

Ultra-thin metallic films are widely applied in optics and microelectronics. However, their properties differ significantly from the bulk material and depend on the substrate material. The nucleation, film growth, and layer properties of atomic layer deposited (ALD) iridium thin films are evaluated on silicon wafers, BK7, fused silica, SiO2, TiO2, Ta2O5, Al2O3, HfO2, Ru, Cr, Mo, and graphite to understand the influence of various substrate materials. This comprehensive study was carried out using scanning electron and atomic force microscopy, X-ray reflectivity and diffraction, four-point probe resistivity and contact angle measurements, tape tests, and Auger electron spectroscopy. Within few ALD cycles, iridium islands occur on all substrates. Nevertheless, their size, shape, and distribution depend on the substrate. Ultra-thin (almost) closed Ir layers grow on a Ta2O5 seed layer after 100 cycles corresponding to about 5 nm film thickness. In contrast, the growth on Al2O3 and HfO2 is strongly inhibited. The iridium growth on silicon wafers is overall linear. On BK7, fused silica, SiO2, TiO2, Ta2O5, Ru, Cr, and graphite, three different growth regimes are distinguishable. The surface free energy of the substrates correlates with their iridium nucleation delay. Our work, therefore, demonstrates that substrates can significantly tailor the properties of ultra-thin films.

scholarly journals Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Structural Defects ◽  
Zno Thin Films ◽  
Layer Deposition
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