scholarly journals Elastically relaxed free-standing strained-silicon nanomembranes

2006 ◽  
Vol 5 (5) ◽  
pp. 388-393 ◽  
Author(s):  
Michelle M. Roberts ◽  
Levente J. Klein ◽  
Donald E. Savage ◽  
Keith A. Slinker ◽  
Mark Friesen ◽  
...  
Keyword(s):  
Strained Silicon ◽  
Free Standing ◽  
Silicon Nanomembranes

scholarly journals Fast flexible electronics with strained silicon nanomembranes

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Han Zhou ◽  
Jung-Hun Seo ◽  
Deborah M. Paskiewicz ◽  
Ye Zhu ◽  
George K. Celler ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Strained Silicon ◽  
Silicon Nanomembranes

Silicon Nanomembranes

MRS Bulletin ◽  
2007 ◽  
Vol 32 (1) ◽  
pp. 57-63 ◽  
Author(s):  
Max G. Lagally
Keyword(s):  
Quantum Dots ◽  
Single Crystals ◽  
San Francisco ◽  
Research Society ◽  
Strained Silicon ◽  
Spring Meeting ◽  
University Of Wisconsin ◽  
Materials Research ◽  
Silicon Nanomembranes

AbstractThis article is based on the presentation given by Max G. Lagally (University of Wisconsin–Madison) as part of Symposium X: Frontiers of Materials Research on April 18, 2006, at the Materials Research Society Spring Meeting in San Francisco.Structures with nanoscale dimensions are the essence of nanotechnology. Beginning with quantum dots and buckyballs, nanostructures now include nanotubes, rods, wires, and most recently, nanomembranes: very thin, large, freestanding or freefloating strain-engineered single crystals that can variously be made into tubes or other shapes, cut into millions of identical wires, or used as conformal sheets. This article provides a brief overview of the fabrication and properties of strained-silicon nanomembranes.

Strain redistribution in free-standing bridge structure released from strained silicon-on-insulator

2014 ◽  
Vol 105 (19) ◽  
pp. 193505 ◽  
Author(s):  
Gaodi Sun ◽  
Miao Zhang ◽  
Zhongying Xue ◽  
Qinglei Guo ◽  
Da Chen ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Strained Silicon ◽  
Bridge Structure ◽  
Free Standing

Influence of Strain on the Conduction Band Structure of Strained Silicon Nanomembranes

2008 ◽  
Vol 101 (14) ◽  
Author(s):  
C. Euaruksakul ◽  
Z. W. Li ◽  
F. Zheng ◽  
F. J. Himpsel ◽  
C. S. Ritz ◽  
...  
Keyword(s):  
Band Structure ◽  
Conduction Band ◽  
Strained Silicon ◽  
Silicon Nanomembranes

scholarly journals Ordering of nanostressors on free-standing silicon nanomembranes and nanoribbons

2010 ◽  
Vol 12 (10) ◽  
pp. 103011 ◽  
Author(s):  
C S Ritz ◽  
H-J Kim-Lee ◽  
D M Detert ◽  
M M Kelly ◽  
F S Flack ◽  
...  
Keyword(s):  
Free Standing ◽  
Silicon Nanomembranes

Strain analysis of free-standing strained silicon-on-insulator nanomembrane

2015 ◽  
Vol 24 (3) ◽  
pp. 036801
Author(s):  
Gao-Di Sun ◽  
Lin-Xi Dong ◽  
Zhong-Ying Xue ◽  
Da Chen ◽  
Qing-Lei Guo ◽  
...  
Keyword(s):  
Strain Analysis ◽  
Silicon On Insulator ◽  
Strained Silicon ◽  
Free Standing

Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

2003 ◽  
Vol 765 ◽  
Author(s):  
Minjoo L. Lee ◽  
Eugene A. Fitzgerald
Keyword(s):  
Strained Silicon ◽  
Strained Layer ◽  
Dual Channel ◽  
Enhanced Mobility ◽  
Valence Bands ◽  
Almost All

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.

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