scholarly journals Fast flexible electronics with strained silicon nanomembranes

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Han Zhou ◽  
Jung-Hun Seo ◽  
Deborah M. Paskiewicz ◽  
Ye Zhu ◽  
George K. Celler ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Strained Silicon ◽  
Silicon Nanomembranes

Silicon Nanomembranes

MRS Bulletin ◽  
2007 ◽  
Vol 32 (1) ◽  
pp. 57-63 ◽  
Author(s):  
Max G. Lagally
Keyword(s):  
Quantum Dots ◽  
Single Crystals ◽  
San Francisco ◽  
Research Society ◽  
Strained Silicon ◽  
Spring Meeting ◽  
University Of Wisconsin ◽  
Materials Research ◽  
Silicon Nanomembranes

AbstractThis article is based on the presentation given by Max G. Lagally (University of Wisconsin–Madison) as part of Symposium X: Frontiers of Materials Research on April 18, 2006, at the Materials Research Society Spring Meeting in San Francisco.Structures with nanoscale dimensions are the essence of nanotechnology. Beginning with quantum dots and buckyballs, nanostructures now include nanotubes, rods, wires, and most recently, nanomembranes: very thin, large, freestanding or freefloating strain-engineered single crystals that can variously be made into tubes or other shapes, cut into millions of identical wires, or used as conformal sheets. This article provides a brief overview of the fabrication and properties of strained-silicon nanomembranes.

scholarly journals Elastically relaxed free-standing strained-silicon nanomembranes

2006 ◽  
Vol 5 (5) ◽  
pp. 388-393 ◽  
Author(s):  
Michelle M. Roberts ◽  
Levente J. Klein ◽  
Donald E. Savage ◽  
Keith A. Slinker ◽  
Mark Friesen ◽  
...  
Keyword(s):  
Strained Silicon ◽  
Free Standing ◽  
Silicon Nanomembranes

12-GHz Thin-Film Transistors on Transferrable Silicon Nanomembranes for High-Performance Flexible Electronics

Small ◽  
2010 ◽  
Vol 6 (22) ◽  
pp. 2553-2557 ◽  
Author(s):  
Lei Sun ◽  
Guoxuan Qin ◽  
Jung-Hun Seo ◽  
George K. Celler ◽  
Weidong Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
High Performance ◽  
Silicon Nanomembranes

Fast flexible electronics using transferrable silicon nanomembranes

2012 ◽  
Vol 45 (14) ◽  
pp. 143001 ◽  
Author(s):  
Kan Zhang ◽  
Jung-Hun Seo ◽  
Weidong Zhou ◽  
Zhenqiang Ma
Keyword(s):  
Flexible Electronics ◽  
Silicon Nanomembranes

Influence of Strain on the Conduction Band Structure of Strained Silicon Nanomembranes

2008 ◽  
Vol 101 (14) ◽  
Author(s):  
C. Euaruksakul ◽  
Z. W. Li ◽  
F. Zheng ◽  
F. J. Himpsel ◽  
C. S. Ritz ◽  
...  
Keyword(s):  
Band Structure ◽  
Conduction Band ◽  
Strained Silicon ◽  
Silicon Nanomembranes

Flexible electronics: 12-GHz Thin-Film Transistors on Transferrable Silicon Nanomembranes for High-Performance Flexible Electronics (Small 22/2010)

Small ◽  
2010 ◽  
Vol 6 (22) ◽  
pp. 2473-2473 ◽  
Author(s):  
Lei Sun ◽  
Guoxuan Qin ◽  
Jung-Hun Seo ◽  
George K. Celler ◽  
Weidong Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
High Performance ◽  
Silicon Nanomembranes

Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

2003 ◽  
Vol 765 ◽  
Author(s):  
Minjoo L. Lee ◽  
Eugene A. Fitzgerald
Keyword(s):  
Strained Silicon ◽  
Strained Layer ◽  
Dual Channel ◽  
Enhanced Mobility ◽  
Valence Bands ◽  
Almost All

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.

Fabrication of 3D Temperature Sensor Using Magnetostrictive Inkjet Printhead

2020 ◽  
Vol 64 (5) ◽  
pp. 50405-1-50405-5
Author(s):  
Young-Woo Park ◽  
Myounggyu Noh
Keyword(s):  
Flexible Electronics ◽  
Inkjet Printing ◽  
Temperature Sensor ◽  
Computer Aided Design ◽  
Low Cost ◽  
Three Dimensional ◽  
Drop On Demand ◽  
Aided Design ◽  
Nanoparticle Ink ◽  
Inkjet Printhead

Abstract Recently, the three-dimensional (3D) printing technique has attracted much attention for creating objects of arbitrary shape and manufacturing. For the first time, in this work, we present the fabrication of an inkjet printed low-cost 3D temperature sensor on a 3D-shaped thermoplastic substrate suitable for packaging, flexible electronics, and other printed applications. The design, fabrication, and testing of a 3D printed temperature sensor are presented. The sensor pattern is designed using a computer-aided design program and fabricated by drop-on-demand inkjet printing using a magnetostrictive inkjet printhead at room temperature. The sensor pattern is printed using commercially available conductive silver nanoparticle ink. A moving speed of 90 mm/min is chosen to print the sensor pattern. The inkjet printed temperature sensor is demonstrated, and it is characterized by good electrical properties, exhibiting good sensitivity and linearity. The results indicate that 3D inkjet printing technology may have great potential for applications in sensor fabrication.

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