Effect of Humidity on the Spark Breakdown Voltage

Nature ◽  
1959 ◽  
Vol 183 (4655) ◽  
pp. 174-175 ◽  
Author(s):  
K. R. ALLEN ◽  
K. PHILLIPS
1957 ◽  
Vol 35 (5) ◽  
pp. 562-569 ◽  
Author(s):  
W. A. Gambling ◽  
F. W. Crawford

Measurements of the spark breakdown voltage between carbon electrodes in hydrogen, argon, nitrogen, and air are given for ranges of the product p (mm. Hg) × d (cm.) between 0.1 and 1000 mm. Hg cm. The results show that in each gas Paschen's Law is obeyed for pd > 10 mm. Hg cm. For pd < 10 mm. Hg cm. deviations from Paschen's Law were observed at the longer gap lengths. The minimum spark breakdown voltage, Vsm, occurred near pd = 1 mm. Hg cm. The normal cathode-fall voltage, Vcn, was also measured, and was found to be less than Vsm in hydrogen, argon, and air, and greater than Vsm in nitrogen. A theoretical analysis is made which predicts the relationship Vcn = 1.110 Vsm and the reasons why this condition is seldom found in practice are discussed.


2018 ◽  
Vol 11 (3) ◽  
pp. 79-84
Author(s):  
Hassan J. Mohammed

A Dc positive sharp- to –plane Corona phenomena  have been studied in electronegative gases (air ,and SF6 ) for pressure up to (3.2bar and gap length from 0.1 to 0.5 cm), with high degree of non-uniformity electric field. The corona –breakdown phases can exhibit anomalous characteristics. The exact physical process of such phenomena is not yet fully understood complete. To better understand this process precise knowledge about corona and spark discharge is necessary. Hence the dependency of corona inception and spark breakdown voltage on the pressure, non-uniformity field factor  and the type of applied voltage ,also the type of materials. The steady  region of corona discharge is observed in the ( sharp- to- plane ), for applied voltage between the threshold value voltage and onset value , we observe an effect that attaching gases. A Townsend type of discharge develops in the region close to point. At voltages above the onset value , the burst pulses are replaced by a Dc current ,and in some cases 'pre-breakdown ' streamer are also observed.


2018 ◽  
Vol 138 (8) ◽  
pp. 441-448 ◽  
Author(s):  
Norimitsu Takamura ◽  
Nobutaka Araoka ◽  
Seiya Kamohara ◽  
Yuta Hino ◽  
Takuya Beppu ◽  
...  

Author(s):  
Nobuyuki Wakai ◽  
Yuji Kobira ◽  
Hidemitsu Egawa ◽  
Masayoshi Tsutsumi

Abstract Fundamental consideration for CDM (Charged Device Model) breakdown was investigated with 90nm technology products and others. According to the result of failure analysis, it was found that gate oxide breakdown was critical failure mode for CDM test. High speed triggered protection device such as ggNMOS and SCR (Thyristor) is effective method to improve its CDM breakdown voltage and an improvement for evaluated products were confirmed. Technological progress which is consisted of down-scaling of protection device size and huge number of IC pins of high function package makes technology vulnerable and causes significant CDM stress. Therefore, it is expected that CDM protection designing tends to become quite difficult. In order to solve these problems in the product, fundamental evaluations were performed. Those are a measurement of discharge parameter and stress time dependence of CDM breakdown voltage. Peak intensity and rise time of discharge current as critical parameters are well correlated their package capacitance. Increasing stress time causes breakdown voltage decreasing. This mechanism is similar to that of TDDB for gate oxide breakdown. Results from experiences and considerations for future CDM reliable designing are explained in this report.


1993 ◽  
Vol 29 (15) ◽  
pp. 1381 ◽  
Author(s):  
B.R. Kang ◽  
S.N. Yoon ◽  
Y.H. Cho ◽  
S.I. Cha ◽  
Y.I. Choi

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