Improving InP High Electron Mobility Transistor Performance by an Inserting Blocking Diode for Terahertz Applications

2018 ◽  
Vol 16 (10) ◽  
pp. 768-775
Author(s):  
Derrouiche Soufiane ◽  
Bouazza Benyounes ◽  
Sayah Choukria
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Terahertz Applications

Intersubband Device Modeling of Gallium Nitride High Electron Mobility Transistor for Terahertz Applications

Radio Science ◽  
2019 ◽  
Vol 54 (12) ◽  
pp. 1172-1180
Author(s):  
R. K. Kaneriya ◽  
Gunjan Rastogi ◽  
P. K. Basu ◽  
R. B. Upadhyay ◽  
A. N. Bhattacharya
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Device Modeling ◽  
High Electron ◽  
High Electron Mobility ◽  
Terahertz Applications

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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