Quantitative Heat Dissipation Characteristics in Current-Carrying GaN Nanowires Probed by Combining Scanning Thermal Microscopy and Spatially Resolved Raman Spectroscopy

ACS Nano ◽  
2010 ◽  
Vol 5 (1) ◽  
pp. 255-262 ◽  
Author(s):  
Afsoon Soudi ◽  
Robert D. Dawson ◽  
Yi Gu
Keyword(s):  
Raman Spectroscopy ◽  
Heat Dissipation ◽  
Scanning Thermal Microscopy ◽  
Thermal Microscopy ◽  
Gan Nanowires ◽  
Spatially Resolved

Scanning Thermal Microscopy of Carbon Nanotubes

2000 ◽  
Author(s):  
Li Shi ◽  
Sergei Plyasunov ◽  
Adrian Bachtold ◽  
Paul L. McEuen ◽  
Arunava Majumdar
Keyword(s):  
Carbon Nanotubes ◽  
Thermal Imaging ◽  
Heat Dissipation ◽  
Energy Transport ◽  
Imaging Technique ◽  
Mechanical Deformation ◽  
Phonon Transport ◽  
Scanning Thermal Microscopy ◽  
Thermal Microscopy ◽  
Nanoelectronic Circuits

Abstract This paper reports the use of scanning thermal microscopy (SThM) for studying heat dissipation and phonon transport in nanoelectronic circuits consisting of carbon nanotubes (CNs). Thermally designed and batch fabricated SThM probes were used to resolve the phonon temperature distribution in the CN circuits with a spatial resolution of 50 nm. Heat dissipation at poor metal-CN contacts could be readily found by the thermal imaging technique. Important questions regarding energy transport in nanoelectronic circuits, such as where is heat dissipated, whether the electrons and phonons are in equilibrium, how phonons are transported, and what are the effects of mechanical deformation on the transport and dissipation properties, are addressed in this work.

scholarly journals Spatially resolved thermoelectric effects in operando semiconductor–metal nanowire heterostructures

Nanoscale ◽  
2020 ◽  
Vol 12 (40) ◽  
pp. 20590-20597
Author(s):  
Nadine Gächter ◽  
Fabian Könemann ◽  
Masiar Sistani ◽  
Maximilian G. Bartmann ◽  
Marilyne Sousa ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Scanning Thermal Microscopy ◽  
Thermoelectric Effects ◽  
Thermal Microscopy ◽  
Spatially Resolved ◽  
Nanowire Heterostructures ◽  
In Operando ◽  
Metal Nanowire

The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy.

scholarly journals Scanning Thermal Microscopy of Ultrathin Films: Numerical Studies Regarding Cantilever Displacement, Thermal Contact Areas, Heat Fluxes, and Heat Distribution

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 491
Author(s):  
Christoph Metzke ◽  
Fabian Kühnel ◽  
Jonas Weber ◽  
Günther Benstetter
Keyword(s):  
Thermal Properties ◽  
Ultrathin Films ◽  
Hexagonal Boron Nitride ◽  
Thermal Contact ◽  
Heat Transfer Process ◽  
Heat Propagation ◽  
Heat Fluxes ◽  
Detailed Knowledge ◽  
Scanning Thermal Microscopy ◽  
Thermal Microscopy

New micro- and nanoscale devices require electrically isolating materials with specific thermal properties. One option to characterize these thermal properties is the atomic force microscopy (AFM)-based scanning thermal microscopy (SThM) technique. It enables qualitative mapping of local thermal conductivities of ultrathin films. To fully understand and correctly interpret the results of practical SThM measurements, it is essential to have detailed knowledge about the heat transfer process between the probe and the sample. However, little can be found in the literature so far. Therefore, this work focuses on theoretical SThM studies of ultrathin films with anisotropic thermal properties such as hexagonal boron nitride (h-BN) and compares the results with a bulk silicon (Si) sample. Energy fluxes from the probe to the sample between 0.6 µW and 126.8 µW are found for different cases with a tip radius of approximately 300 nm. A present thermal interface resistance (TIR) between bulk Si and ultrathin h-BN on top can fully suppress a further heat penetration. The time until heat propagation within the sample is stationary is found to be below 1 µs, which may justify higher tip velocities in practical SThM investigations of up to 20 µms−1. It is also demonstrated that there is almost no influence of convection and radiation, whereas a possible TIR between probe and sample must be considered.

Adhesive penetration of wood cell walls investigated by scanning thermal microscopy (SThM)

Holzforschung ◽  
2008 ◽  
Vol 62 (1) ◽  
pp. 91-98 ◽  
Author(s):  
Johannes Konnerth ◽  
David Harper ◽  
Seung-Hwan Lee ◽  
Timothy G. Rials ◽  
Wolfgang Gindl
Keyword(s):  
Thermal Conductivity ◽  
Thermal Properties ◽  
Surface Temperature ◽  
Cell Walls ◽  
Adhesive Contact ◽  
Wood Adhesive ◽  
Bond Line ◽  
Scanning Thermal Microscopy ◽  
Thermal Probe ◽  
Thermal Microscopy

Abstract Cross sections of wood adhesive bonds were studied by scanning thermal microscopy (SThM) with the aim of scrutinizing the distribution of adhesive in the bond line region. The distribution of thermal conductivity, as well as temperature in the bond line area, was measured on the surface by means of a nanofabricated thermal probe offering high spatial and thermal resolution. Both the thermal conductivity and the surface temperature measurements were found suitable to differentiate between materials in the bond region, i.e., adhesive, cell walls and embedding epoxy. Of the two SThM modes available, the surface temperature mode provided images with superior optical contrast. The results clearly demonstrate that the polyurethane adhesive did not cause changes of thermal properties in wood cell walls with adhesive contact. By contrast, cell walls adjacent to a phenol-resorcinol-formaldehyde adhesive showed distinctly changed thermal properties, which is attributed to the presence of adhesive in the wood cell wall.

Optical Diagnostics of Microstructures Fabricated Using Quantum Well Intermixing

1999 ◽  
Vol 607 ◽  
Author(s):  
A. Saher Helmy ◽  
A.C. Bryce ◽  
C.N. Ironside ◽  
J.S. Aitchison ◽  
J.H. Marsh ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Quantum Well ◽  
Spatial Resolution ◽  
Optical Diagnostics ◽  
Complete Suppression ◽  
Quantum Well Intermixing ◽  
Spatially Resolved ◽  
Non Destructive ◽  
Insight Into ◽  
Free Vacancy

AbstractIn this paper we shall discuss techniques for accurate, non-destructive, optical characterisation of structures fabricated using quantum well intermixing (QWI). Spatially resolved photoluminescence and Raman spectroscopy were used to characterise the lateral bandgap profiles produced by impurity free vacancy disordering (IFVD) technology. Different features were used to examine the spatial resolution of the intermixing process. Features include 1:1 gratings as well as isolated stripes. From the measurements, the spatial selectivity of IFVD could be identified, and was found to be ∼4.5 μm, in contrast with the spatial resolution of the process of sputtering induced intermixing, which was found to be ∼2.5 μm. In addition, PL measurements on 1:1 gratings fabricated using IFVD show almost complete suppression of intermixing dielectric cap gratings with periods less than 10 microns. Finally, some insight into the limitations and merits of PL and Raman for the precision characterisation of QWI will be presented.

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