Quantitative scanning thermal microscopy of ErAs/GaAs superlattice structures grown by molecular beam epitaxy

2013 ◽  
Vol 102 (6) ◽  
pp. 061912 ◽  
Author(s):  
K. W. Park ◽  
H. P. Nair ◽  
A. M. Crook ◽  
S. R. Bank ◽  
E. T. Yu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Scanning Thermal Microscopy ◽  
Thermal Microscopy ◽  
Superlattice Structures

Epitaxial growth and self-organized superlattice structures in AlGaN films grown by plasma assisted molecular beam epitaxy

2001 ◽  
Vol 87 (3) ◽  
pp. 227-236 ◽  
Author(s):  
E. Iliopoulos ◽  
K.F. Ludwig ◽  
T.D. Moustakas ◽  
Ph. Komninou ◽  
Th. Karakostas ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Self Organized ◽  
Superlattice Structures

The Superlattice Diffusion Probe: A Tool for Modeling Diffusion in III-V Semiconductors

1991 ◽  
Vol 240 ◽  
Author(s):  
E. L. Allen ◽  
C. J. Pass ◽  
M. D. Deal ◽  
J. D. Plummer ◽  
V. F. K. Chia
Keyword(s):  
Molecular Beam Epitaxy ◽  
Fermi Level ◽  
Interdiffusion Coefficient ◽  
Molecular Beam ◽  
Significant Enhancement ◽  
Superlattice Structures ◽  
Level Effect

ABSTRACTUndoped AlAs/AlxGa1−xAs superlattice structures were grown by molecular beam epitaxy and annealed under Si3N4, SiO2 or WNX encapsulant films, both with and without the presence of implanted Sn. Enhancement of the Al-Ga interdiffusion coefficient occurred under the Si3N4 film due to in-diffusion of Si. Enhancement was even greater during diffusion of the Sn implant under both Si3N4 and SiO2. Underneath the WNX film, however, interdiffusion was suppressed even in the presence of Sn. We simulated these results with SUPREM IV and show that both the Fermi level effect and vacancy injection from the cap are necessary to cause significant enhancement of Al-Ga superlattice disordering.

(Ga, Mn)As/GaAs Diluted Magnetic Semiconductor Superlattice Structures Prepared by Molecular Beam Epitaxy

1997 ◽  
Vol 36 (Part 2, No. 2A) ◽  
pp. L73-L75 ◽  
Author(s):  
Aidong Shen ◽  
Hideo Ohno ◽  
Fumihiro Matsukura ◽  
Yasuhiro Sugawara ◽  
Yuzo Ohno ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Semiconductor Superlattice ◽  
Diluted Magnetic ◽  
Superlattice Structures

Defect reduction in GaAs grown by molecular beam epitaxy using different superlattice structures

1986 ◽  
Vol 49 (15) ◽  
pp. 942-944 ◽  
Author(s):  
S. M. Bedair ◽  
T. P. Humphreys ◽  
N. A. El‐Masry ◽  
Y. Lo ◽  
N. Hamaguchi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Reduction ◽  
Superlattice Structures
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