Temperature distribution in Scanning Thermal Microscopy tip investigated with micro-Raman spectroscopy

2016 ◽  
Vol 154 ◽  
pp. 12-16 ◽  
Author(s):  
P. Borowicz ◽  
P. Janus ◽  
P. Grabiec ◽  
R. Dobrowolski
Keyword(s):  
Raman Spectroscopy ◽  
Temperature Distribution ◽  
Scanning Thermal Microscopy ◽  
Thermal Microscopy ◽  
Micro Raman Spectroscopy

Temperature distribution in Si-MOSFETs studied by micro-Raman spectroscopy

1992 ◽  
Vol 39 (4) ◽  
pp. 858-863 ◽  
Author(s):  
R. Ostermeir ◽  
K. Brunner ◽  
G. Abstreiter ◽  
W. Weber
Keyword(s):  
Raman Spectroscopy ◽  
Temperature Distribution ◽  
Micro Raman Spectroscopy

Characterization of Interconnect Defects Due to Electromigration Using Scanning Thermal Microscopy

2003 ◽  
Author(s):  
E.X.W. Wu ◽  
X.H. Zheng ◽  
J.C.H. Phang ◽  
L.J. Balk ◽  
J.R. Lloyd
Keyword(s):  
Temperature Distribution ◽  
Optical Microscope ◽  
Physical Structure ◽  
Scanning Thermal Microscopy ◽  
Thermal Microscopy ◽  
Microscope Image ◽  
Optical Microscope Image ◽  
Temperature Distributions

Abstract In this paper, the temperature distributions around interconnect defects due to electromigration are presented. A method to overlay the temperature distribution over the optical microscope image of the physical defect has also been developed. This allows a direct correlation of the temperature distribution and the physical structure of the defect.

Temperature distribution analysis of AlGaN/GaN HFETs operated around breakdown voltage using micro-Raman spectroscopy and device simulation

2007 ◽  
Vol 4 (7) ◽  
pp. 2744-2747 ◽  
Author(s):  
Kenichi Kosaka ◽  
Tatsuya Fujishima ◽  
Kaoru Inoue ◽  
Akihiro Hinoki ◽  
Tomoaki Yamada ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Temperature Distribution ◽  
Breakdown Voltage ◽  
Device Simulation ◽  
Distribution Analysis ◽  
Micro Raman Spectroscopy

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

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