Low-Bias Active Control of Terahertz Waves by Coupling Large-Area CVD Graphene to a Terahertz Metamaterial

Nano Letters ◽  
2013 ◽  
Vol 13 (7) ◽  
pp. 3193-3198 ◽  
Author(s):  
Federico Valmorra ◽  
Giacomo Scalari ◽  
Curdin Maissen ◽  
Wangyang Fu ◽  
Christian Schönenberger ◽  
...  
2014 ◽  
Vol 16 (8) ◽  
pp. 3632 ◽  
Author(s):  
G. V. Bianco ◽  
M. Losurdo ◽  
M. M. Giangregorio ◽  
P. Capezzuto ◽  
G. Bruno
Keyword(s):  

Sensors ◽  
2020 ◽  
Vol 20 (10) ◽  
pp. 2874
Author(s):  
Xuan Liu ◽  
Lisa Samfaß ◽  
Kevin Kolpatzeck ◽  
Lars Häring ◽  
Jan C. Balzer ◽  
...  

With an increasing number of applications of terahertz systems in industrial fields and communications, terahertz beamforming and beam steering techniques are required for high-speed, large-area scanning. As a promising means for beam steering, micro-electro-mechanical system (MEMS)-based reflection gratings have been successfully implemented for terahertz beam control. So far, the diffraction grating efficiency is relatively low due to the limited vertical displacement range of the reflectors. In this paper, we propose a design for a reconfigurable MEMS-based reflection grating consisting of multiple subwavelength reflectors which are driven by 5-bit, high-throw electrostatic actuators. We vary the number of the reflectors per grating period and configure the throw of individual reflectors so that the reflection grating is shaped as a blazed grating to steer the terahertz beam with maximum diffraction grating efficiency. Furthermore, we provide a mathematical model for calculating the radiation pattern of the terahertz wave reflected by general reflection gratings consisting of subwavelength reflectors. The calculated and simulated radiation patterns of the designed grating show that we can steer the angle of the terahertz waves in a range of up to ± 56.4 ∘ with a maximum sidelobe level of −10 dB at frequencies from 0.3 THz to 1 THz.


Carbon ◽  
2014 ◽  
Vol 77 ◽  
pp. 814-822 ◽  
Author(s):  
Bian Wu ◽  
Hatice M. Tuncer ◽  
Anestis Katsounaros ◽  
Weiping Wu ◽  
Matthew T. Cole ◽  
...  

2015 ◽  
Vol 6 (14) ◽  
pp. 2745-2750 ◽  
Author(s):  
Felix Lang ◽  
Marc A. Gluba ◽  
Steve Albrecht ◽  
Jörg Rappich ◽  
Lars Korte ◽  
...  

2020 ◽  
Vol 31 (24) ◽  
pp. 21821-21831
Author(s):  
Chaitanya Arya ◽  
K. Kanishka H. De Silva ◽  
Masamichi Yoshimura

2020 ◽  
Vol 32 (35) ◽  
pp. 2000250
Author(s):  
Seojoo Lee ◽  
Soojeong Baek ◽  
Teun‐Teun Kim ◽  
Hyukjoon Cho ◽  
Sangha Lee ◽  
...  

2017 ◽  
Vol 53 (67) ◽  
pp. 9308-9311 ◽  
Author(s):  
Felix Rösicke ◽  
Marc A. Gluba ◽  
Timur Shaykhutdinov ◽  
Guoguang Sun ◽  
Christoph Kratz ◽  
...  

The transfer of p-(N-maleimido)phenyl functionalized graphene has been shown to be robust and lossless.


2016 ◽  
Vol 6 (1) ◽  
Author(s):  
S. Goniszewski ◽  
M. Adabi ◽  
O. Shaforost ◽  
S. M. Hanham ◽  
L. Hao ◽  
...  

Abstract Correlations between the level of p-doping exhibited in large area chemical vapour deposition (CVD) graphene field effect transistor structures (gFETs) and residual charges created by a variety of surface treatments to the silicon dioxide (SiO2) substrates prior to CVD graphene transfer are measured. Beginning with graphene on untreated thermal oxidised silicon, a minimum conductivity (σ min ) occurring at gate voltage V g  = 15 V (Dirac Point) is measured. It was found that more aggressive treatments (O2 plasma and UV Ozone treatments) further increase the gate voltage of the Dirac point up to 65 V, corresponding to a significant increase of the level of p-doping displayed in the graphene. An electrowetting model describing the measured relationship between the contact angle (θ) of a water droplet applied to the treated substrate/graphene surface and an effective gate voltage from a surface charge density is proposed to describe biasing of V g at σ min and was found to fit the measurements with multiplication of a correction factor, allowing effective non-destructive approximation of substrate added charge carrier density using contact angle measurements.


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