Functionalization of any substrate using covalently modified large area CVD graphene

2017 ◽  
Vol 53 (67) ◽  
pp. 9308-9311 ◽  
Author(s):  
Felix Rösicke ◽  
Marc A. Gluba ◽  
Timur Shaykhutdinov ◽  
Guoguang Sun ◽  
Christoph Kratz ◽  
...  
Keyword(s):  
Functionalized Graphene ◽  
Large Area ◽  
Cvd Graphene

The transfer of p-(N-maleimido)phenyl functionalized graphene has been shown to be robust and lossless.

Exploring and rationalising effective n-doping of large area CVD-graphene by NH3

2014 ◽  
Vol 16 (8) ◽  
pp. 3632 ◽  
Author(s):  
G. V. Bianco ◽  
M. Losurdo ◽  
M. M. Giangregorio ◽  
P. Capezzuto ◽  
G. Bruno
Keyword(s):  
Large Area ◽  
Cvd Graphene ◽  
N Doping

scholarly journals Microwave absorption and radiation from large-area multilayer CVD graphene

Carbon ◽  
2014 ◽  
Vol 77 ◽  
pp. 814-822 ◽  
Author(s):  
Bian Wu ◽  
Hatice M. Tuncer ◽  
Anestis Katsounaros ◽  
Weiping Wu ◽  
Matthew T. Cole ◽  
...  
Keyword(s):  
Microwave Absorption ◽  
Large Area ◽  
Cvd Graphene

scholarly journals Perovskite Solar Cells with Large-Area CVD-Graphene for Tandem Solar Cells

2015 ◽  
Vol 6 (14) ◽  
pp. 2745-2750 ◽  
Author(s):  
Felix Lang ◽  
Marc A. Gluba ◽  
Steve Albrecht ◽  
Jörg Rappich ◽  
Lars Korte ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Large Area ◽  
Tandem Solar Cells ◽  
Cvd Graphene

Adlayer-free large-area single-crystal CVD graphene growth on copper

2020 ◽  
Vol 31 (24) ◽  
pp. 21821-21831
Author(s):  
Chaitanya Arya ◽  
K. Kanishka H. De Silva ◽  
Masamichi Yoshimura
Keyword(s):  
Single Crystal ◽  
Large Area ◽  
Graphene Growth ◽  
Cvd Graphene

scholarly journals Correlation of p-doping in CVD Graphene with Substrate Surface Charges

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
S. Goniszewski ◽  
M. Adabi ◽  
O. Shaforost ◽  
S. M. Hanham ◽  
L. Hao ◽  
...  
Keyword(s):  
Contact Angle ◽  
Gate Voltage ◽  
Dirac Point ◽  
Substrate Surface ◽  
Chemical Vapour ◽  
Charge Carrier Density ◽  
Surface Charges ◽  
Large Area ◽  
Cvd Graphene ◽  
Graphene Field Effect Transistor

Abstract Correlations between the level of p-doping exhibited in large area chemical vapour deposition (CVD) graphene field effect transistor structures (gFETs) and residual charges created by a variety of surface treatments to the silicon dioxide (SiO2) substrates prior to CVD graphene transfer are measured. Beginning with graphene on untreated thermal oxidised silicon, a minimum conductivity (σ min ) occurring at gate voltage V g  = 15 V (Dirac Point) is measured. It was found that more aggressive treatments (O2 plasma and UV Ozone treatments) further increase the gate voltage of the Dirac point up to 65 V, corresponding to a significant increase of the level of p-doping displayed in the graphene. An electrowetting model describing the measured relationship between the contact angle (θ) of a water droplet applied to the treated substrate/graphene surface and an effective gate voltage from a surface charge density is proposed to describe biasing of V g at σ min and was found to fit the measurements with multiplication of a correction factor, allowing effective non-destructive approximation of substrate added charge carrier density using contact angle measurements.

scholarly journals Large-area functionalized CVD graphene for work function matched transparent electrodes

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Thomas H. Bointon ◽  
Gareth F. Jones ◽  
Adolfo De Sanctis ◽  
Ruth Hill-Pearce ◽  
Monica F. Craciun ◽  
...  
Keyword(s):  
Work Function ◽  
Transparent Electrodes ◽  
Large Area ◽  
Cvd Graphene

Substrate dependence of cyclotron resonance on large-area CVD graphene

2014 ◽  
Vol 14 ◽  
pp. S119-S122 ◽  
Author(s):  
K. Takehana ◽  
Y. Imanaka ◽  
T. Takamasu ◽  
Y. Kim ◽  
K.-S. An
Keyword(s):  
Cyclotron Resonance ◽  
Large Area ◽  
Cvd Graphene ◽  
Substrate Dependence
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