Reversible Resistive Switching and Multilevel Recording in La0.7Sr0.3MnO3Thin Films for Low Cost Nonvolatile Memories

Nano Letters ◽  
2010 ◽  
Vol 10 (10) ◽  
pp. 3828-3835 ◽  
Author(s):  
César Moreno ◽  
Carmen Munuera ◽  
Sergio Valencia ◽  
Florian Kronast ◽  
Xavier Obradors ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Low Cost ◽  
Nonvolatile Memories

Ferroelectric-mediated filamentary resistive switching in P(VDF-TrFE)/ZnO nanocomposite films

2018 ◽  
Vol 20 (23) ◽  
pp. 16176-16183 ◽  
Author(s):  
Tae Yeon Kim ◽  
Gopinathan Anoop ◽  
Yeong Jun Son ◽  
Soo Hyeon Kim ◽  
Eunji Lee ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Low Cost ◽  
Solution Process ◽  
Nanocomposite Films ◽  
Zno Nps ◽  
Bipolar Resistive Switching

Organic ReRAMs based on ferroelectric P(VDF-TrFE) and ZnO NPs blends exhibiting bipolar resistive switching and a high ON/OFF ratio were realized using a low-cost solution process.

Resistive Switching Memory based on Silver-doped Chitosan Thin Films

MRS Advances ◽  
2018 ◽  
Vol 3 (33) ◽  
pp. 1943-1948 ◽  
Author(s):  
C. Strobel ◽  
T. Sandner ◽  
S. Strehle
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tin Oxide ◽  
Bottom Electrode ◽  
Low Cost ◽  
Memory Devices ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Switching Behaviour ◽  
Switching Memory

AbstractMemristors represent an intriguing two-terminal device strategy potentially able to replace conventional memory devices as well as to support neuromorphic computing architectures. Here, we present the resistive switching behaviour of the sustainable and low-cost biopolymer chitosan, which can be extracted from natural chitin present for instance in crab exoskeletons. The biopolymer films were doped with Ag ions in varying concentrations and sandwiched between a bottom electrode such as fluorinated-tin-oxide and a silver top electrode. Silver-doped devices showed an overall promising resistive switching behaviour for doping concentrations between 0.5 to 1 wt% AgNO3. As bottom electrode fluorinated-tin-oxide, nickel, silver and titanium were studied and multiple write and erase cycles were recorded. However, the overall reproducibility and stability are still insufficient to support broader applicability.

Stable resistive switching characteristics of ZrO 2 -based memory device with low-cost

2017 ◽  
Vol 172 ◽  
pp. 26-29 ◽  
Author(s):  
Liping Fu ◽  
Yingtao Li ◽  
Genliang Han ◽  
Xiaoping Gao ◽  
Chuanbing Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Low Cost ◽  
Memory Device ◽  
Switching Characteristics

Resistive Switching Behavior in Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 Ferroelectric Heterostructure

2014 ◽  
Vol 1061-1062 ◽  
pp. 333-336
Author(s):  
Yong Dan Zhu ◽  
Cheng Hu ◽  
An You Zuo
Keyword(s):  
Resistive Switching ◽  
Low Voltage ◽  
Switching Behavior ◽  
Good Time ◽  
Charge Redistribution ◽  
Resistive Switching Behavior ◽  
Switching Performance ◽  
Nonvolatile Memories ◽  
Interface Barrier ◽  
Non Destructive

we report reproducible resistive switching performance and relevant physical mechanism of Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 ferroelectric heterostructure which was fabricated by pulsed laser deposition. This device exhibits a nonvolatile resistive switching with a resistance ratio of up to 60 under 2V/-3V pulse voltages at room temperature. Low voltage readout, reliable resistance switching reproducibility and good time retention, indicating promise for non-destructive readout nonvolatile memories. In this metal/p-semiconductor/ferroelectric/n-semiconductor heterostructure, the mechanism of resistive switching behavior would be attributed to the ferroelectric polarization enhanced field-induced charge redistribution at the semiconductor/ferroelectric interface, resulting in the modulation of the interface barrier height. Keywords: Resistive switching, Ferroelectric resistive switching, Ferroelectric field effect.

Nonvolatile Resistive Memory Switching in Amorphous LaGdO3 Thin Films

2013 ◽  
Vol 1562 ◽  
Author(s):  
P. Misra ◽  
S. P. Pavunny ◽  
R. S. Katiyar
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
High Resistance ◽  
Temperature Dependent ◽  
Memory Switching ◽  
Ohmic Behavior ◽  
Nonvolatile Memories ◽  
Frenkel Emission ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

ABSTRACTNonvolatile unipolar resistive switching properties of the amorphous LaGdO3 thin films deposited by pulsed laser deposition have been studied. Reliable and repeatable switching of the resistance of LaGdO3 film was obtained between low and high resistance states with nearly constant resistance ratio ∼ 106 and non-overlapping switching voltages in the range of ∼0.6-0.75 V and 2.5-4 V respectively. The switching between low and high resistance states was attributed to the formation and rupture of conductive filaments using temperature dependent resistance measurements. The current conduction mechanisms of the LaGdO3 film in low and high resistance states were found to follow the Ohmic behavior and Poole-Frenkel emission respectively. The resistance of low and high resistance states of the film remained nearly constant for up to ∼ 104 seconds indicating good retention. The observed resistive switching characteristics of LaGdO3 thin films are promising for futuristic nonvolatile memories.

scholarly journals Compliance Current-dependent Dual-functional Unipolar and Threshold Resistive Switching in Silver Nanowires-egg Albumen Composites-based Device

2021 ◽  
Vol 2065 (1) ◽  
pp. 012001
Author(s):  
Z J Weng ◽  
Z W Zhao ◽  
H L Jiang ◽  
Y Fang
Keyword(s):  
Resistive Switching ◽  
Silver Nanowires ◽  
Low Cost ◽  
High Resistance State ◽  
Switching Behavior ◽  
Memory Switching ◽  
Dual Functional ◽  
Switching Regime ◽  
Egg Albumen ◽  
Resistance State

Abstract The continued exploration of novel synthetic memristive materials with multifunctional properties is critical for future synapse-emulating circuits and electronic devices in the field of next-generation neuromorphic computing applications. In this work, the silver nanowires (AgNWs)-Egg albumen composites have been integrated as a resistive switching layer in the Ag/AgNWs-Egg albumen/Ag planar structure and exhibits both unipolar (memory) switching and threshold switching functions. The device in unipolar switching regime demonstrates an ON/OFF ratio above 105, a low resistance state of about 1.2 KΩ and a high resistance state of about 120 MΩ. Finally, a mechanism in combination with the conductive filament theory and a tunnelling conduction mechanism is proposed to explain the resistive switching behavior. The devices are prepared by simple and low-cost techniques, which make such devices appealing for future electronic applications.

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