Design and modeling of nonvolatile memories by resistive switching elements

2017 ◽  
Author(s):  
Kalhor
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memories

Resistive Switching Behavior in Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 Ferroelectric Heterostructure

2014 ◽  
Vol 1061-1062 ◽  
pp. 333-336
Author(s):  
Yong Dan Zhu ◽  
Cheng Hu ◽  
An You Zuo
Keyword(s):  
Resistive Switching ◽  
Low Voltage ◽  
Switching Behavior ◽  
Good Time ◽  
Charge Redistribution ◽  
Resistive Switching Behavior ◽  
Switching Performance ◽  
Nonvolatile Memories ◽  
Interface Barrier ◽  
Non Destructive

we report reproducible resistive switching performance and relevant physical mechanism of Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 ferroelectric heterostructure which was fabricated by pulsed laser deposition. This device exhibits a nonvolatile resistive switching with a resistance ratio of up to 60 under 2V/-3V pulse voltages at room temperature. Low voltage readout, reliable resistance switching reproducibility and good time retention, indicating promise for non-destructive readout nonvolatile memories. In this metal/p-semiconductor/ferroelectric/n-semiconductor heterostructure, the mechanism of resistive switching behavior would be attributed to the ferroelectric polarization enhanced field-induced charge redistribution at the semiconductor/ferroelectric interface, resulting in the modulation of the interface barrier height. Keywords: Resistive switching, Ferroelectric resistive switching, Ferroelectric field effect.

Reversible Resistive Switching and Multilevel Recording in La0.7Sr0.3MnO3Thin Films for Low Cost Nonvolatile Memories

Nano Letters ◽  
2010 ◽  
Vol 10 (10) ◽  
pp. 3828-3835 ◽  
Author(s):  
César Moreno ◽  
Carmen Munuera ◽  
Sergio Valencia ◽  
Florian Kronast ◽  
Xavier Obradors ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Low Cost ◽  
Nonvolatile Memories

Nonvolatile Resistive Memory Switching in Amorphous LaGdO3 Thin Films

2013 ◽  
Vol 1562 ◽  
Author(s):  
P. Misra ◽  
S. P. Pavunny ◽  
R. S. Katiyar
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
High Resistance ◽  
Temperature Dependent ◽  
Memory Switching ◽  
Ohmic Behavior ◽  
Nonvolatile Memories ◽  
Frenkel Emission ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

ABSTRACTNonvolatile unipolar resistive switching properties of the amorphous LaGdO3 thin films deposited by pulsed laser deposition have been studied. Reliable and repeatable switching of the resistance of LaGdO3 film was obtained between low and high resistance states with nearly constant resistance ratio ∼ 106 and non-overlapping switching voltages in the range of ∼0.6-0.75 V and 2.5-4 V respectively. The switching between low and high resistance states was attributed to the formation and rupture of conductive filaments using temperature dependent resistance measurements. The current conduction mechanisms of the LaGdO3 film in low and high resistance states were found to follow the Ohmic behavior and Poole-Frenkel emission respectively. The resistance of low and high resistance states of the film remained nearly constant for up to ∼ 104 seconds indicating good retention. The observed resistive switching characteristics of LaGdO3 thin films are promising for futuristic nonvolatile memories.

scholarly journals High-Quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2013
Author(s):  
Chandrasekar Sivakumar ◽  
Gang-Han Tsai ◽  
Pei-Fang Chung ◽  
Babu Balraj ◽  
Yen-Fu Lin ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistance Switching ◽  
Dielectric Films ◽  
Resistive Memory ◽  
Electron Conduction ◽  
Conduction Mechanisms ◽  
Nonvolatile Memories ◽  
Switching Phenomenon ◽  
Low Dimensional ◽  
Memory Applications

One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories. Among different materials, dielectric films have been extensively studied by the scientific research community as a nonvolatile switching material over several decades and have reported many advantages and downsides. However, less attention has been given to low-dimensional materials for resistive memory compared to dielectric films. Particularly, β-Ga2O3 is one of the promising materials for high-power electronics and exhibits the resistive switching phenomenon. However, low-dimensional β-Ga2O3 nanowires have not been explored in resistive memory applications, which hinders further developments. In this article, we studied the resistance switching phenomenon using controlled electron flow in the 1D nanowires and proposed possible resistive switching and electron conduction mechanisms. High-density β-Ga2O3 1D-nanowires on Si (100) substrates were produced via the VLS growth technique using Au nanoparticles as a catalyst. Structural characteristics were analyzed via SEM, TEM, and XRD. Besides, EDS, CL, and XPS binding feature analyses confirmed the composition of individual elements, the possible intermediate absorption sites in the bandgap, and the bonding characteristics, along with the presence of various oxygen species, which is crucial for the ReRAM performances. The forming-free bipolar resistance switching of a single β-Ga2O3 nanowire ReRAM device and performance are discussed in detail. The switching mechanism based on the formation and annihilation of conductive filaments through the oxygen vacancies is proposed, and the possible electron conduction mechanisms in HRS and LRS states are discussed.

Investigation of honey thin film as a resistive switching material for nonvolatile memories

2020 ◽  
Vol 271 ◽  
pp. 127796 ◽  
Author(s):  
Aleksey A. Sivkov ◽  
Yuan Xing ◽  
Kuan Yew Cheong ◽  
Xiangqun Zeng ◽  
Feng Zhao
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Nonvolatile Memories ◽  
Switching Material
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