scholarly journals Resistive Switching in Metal Oxide/Organic Semiconductor Nonvolatile Memories

2018 ◽  
Author(s):  
Henrique L. Gomes ◽  
Dago M. de Leeuw ◽  
Stefan C.J. Meskers
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Organic Semiconductor ◽  
Nonvolatile Memories

scholarly journals Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

2015 ◽  
Vol 118 (20) ◽  
pp. 205503 ◽  
Author(s):  
Benjamin F. Bory ◽  
Paulo R. F. Rocha ◽  
Henrique L. Gomes ◽  
Dago M. de Leeuw ◽  
Stefan C. J. Meskers
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Organic Semiconductor ◽  
Critical Phenomenon ◽  
Unipolar Resistive Switching

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

scholarly journals Relationship between Resistive Switching Effect and Secondary Electron Yield in Transition Metal Oxide Films

Hyomen Kagaku ◽  
2011 ◽  
Vol 32 (7) ◽  
pp. 422-427
Author(s):  
Takatoshi YODA ◽  
Kentaro KINOSHITA ◽  
Kazufumi DOBASHI ◽  
Kenichi KITAMURA ◽  
Satoru KISHIDA
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Resistive Switching ◽  
Secondary Electron ◽  
Oxide Films ◽  
Transition Metal Oxide ◽  
Switching Effect ◽  
Metal Oxide Films ◽  
Secondary Electron Yield ◽  
Resistive Switching Effect

scholarly journals Anomalous temperature dependence of the current in a metal-oxide-polymer resistive switching diode

2010 ◽  
Vol 44 (2) ◽  
pp. 025103 ◽  
Author(s):  
Henrique L Gomes ◽  
Paulo R F Rocha ◽  
Asal Kiazadeh ◽  
Dago M De Leeuw ◽  
Stefan C J Meskers
Keyword(s):  
Metal Oxide ◽  
Temperature Dependence ◽  
Resistive Switching ◽  
Anomalous Temperature Dependence ◽  
Anomalous Temperature

Bias Polarity-Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer

2015 ◽  
Vol 1 (8) ◽  
pp. 1500061 ◽  
Author(s):  
Jian-Shiou Huang ◽  
Yung-Chang Lin ◽  
Hung-Wei Tsai ◽  
Wen-Chun Yen ◽  
Chia-Wei Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Oxide Layer ◽  
Resistive Switching ◽  
Point Contact ◽  
Resistive Switching Memory ◽  
Metal Oxide Layer ◽  
Switching Memory

Electrical Characteristics of Metal Oxide Based Multi-Layer Vertical Resistive Switching Memories

2014 ◽  
Vol 14 (11) ◽  
pp. 8201-8204
Author(s):  
Sung Hwan Jang ◽  
Dong Hun Kim ◽  
Dong Yoel Yoon ◽  
Tae Whan Kim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Electrical Characteristics
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