Ferroelectric-mediated filamentary resistive switching in P(VDF-TrFE)/ZnO nanocomposite films

2018 ◽  
Vol 20 (23) ◽  
pp. 16176-16183 ◽  
Author(s):  
Tae Yeon Kim ◽  
Gopinathan Anoop ◽  
Yeong Jun Son ◽  
Soo Hyeon Kim ◽  
Eunji Lee ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Low Cost ◽  
Solution Process ◽  
Nanocomposite Films ◽  
Zno Nps ◽  
Bipolar Resistive Switching

Organic ReRAMs based on ferroelectric P(VDF-TrFE) and ZnO NPs blends exhibiting bipolar resistive switching and a high ON/OFF ratio were realized using a low-cost solution process.

scholarly journals Resistive Switching Property of Organic–Inorganic Tri-Cation Lead Iodide Perovskite Memory Device

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1155
Author(s):  
Yuan-Wen Hsiao ◽  
Shi-Yu Wang ◽  
Cheng-Liang Huang ◽  
Ching-Chich Leu ◽  
Chuan-Feng Shih
Keyword(s):  
Resistive Switching ◽  
Indium Tin Oxide ◽  
Solution Process ◽  
Memory Device ◽  
Grain Structure ◽  
Switching Behavior ◽  
Lead Iodide ◽  
Bipolar Resistive Switching ◽  
Ionic Size ◽  
The Stability

In this study, a glass/indium tin oxide (ITO)/formamidinium-methylammonium-cesium (FA-MA-Cs) tri-cation lead iodide perovskite/poly(methyl methacrylate (PMMA)/Al memory device with a controlled composition of (FA0.75MA0.25)1-xCsxPbI3 (x = 0–0.1) is demonstrated to exhibit bipolar resistive switching behavior. The tri-cation organic–inorganic metal halide perovskite film was prepared by a one-step solution process in which the amount of Cs was varied to modify the property of FA0.75MA0.25PbI3. It was found that the microstructure and defect properties of films are highly dependent on the contents of FA, MA, and Cs in the perovskite. The results found that 5% CsI doping is the optimized condition for improving the quality of FA0.75MA0.25PbI3, forming a high quality tri-cation perovskite film with a smooth, uniform, stable and robust crystalline grain structure. The resistive switching on/off ratio of the (FA0.75MA0.25)0.95Cs0.05PbI3 device is greater than 103 owing to the improved thin-film quality. Moreover, for the 5% CsI doped FA0.75MA0.25PbI3 films, the endurance and the stability of retention are better than the non-doped film. The improved microstructure and memory properties are attributed to the balance stress of FA/MA/Cs with different ionic size. It suggests the potential to achieve a desired resistive memory property of tri-cationic perovskite by carefully adjusting the cation ratios.

scholarly journals Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 359
Author(s):  
Harshada Patil ◽  
Honggyun Kim ◽  
Shania Rehman ◽  
Kalyani D. Kadam ◽  
Jamal Aziz ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Bulk Heterojunction ◽  
Low Cost ◽  
Random Access ◽  
Protective Layer ◽  
Memory Device ◽  
Environmental Stability ◽  
Bipolar Resistive Switching

Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as an organic heterojunction with inorganic ZnO protective layer. The prepared memory device has consistent DC endurance (500 cycles), retention properties (104 s), high ON/OFF ratio (105), and environmental stability. The observation of bipolar resistive switching is attributed to creation and rupture of the Ag filament. In addition, our conductive bridge random access memory (CBRAM) device has adequate regulation of the current compliance leads to multilevel resistive switching of a high data density storage.

Bipolar Resistive Switching in the Ag/Sb2Te3/Pt Heterojunction

2021 ◽  
Author(s):  
Zhenhua Wu ◽  
Yinxiao Feng ◽  
Yan Liu ◽  
Huilie Shi ◽  
Shuai Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching

scholarly journals Biodegradable Chitosan Films with ZnO Nanoparticles Synthesized Using Food Industry By-Products—Production and Characterization

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 646
Author(s):  
Victor Gomes Lauriano Souza ◽  
Marta M. Alves ◽  
Catarina F. Santos ◽  
Isabel A. C. Ribeiro ◽  
Carolina Rodrigues ◽  
...  
Keyword(s):  
Zinc Oxide Nanoparticles ◽  
Food Industry ◽  
Low Cost ◽  
Young Modulus ◽  
Barrier Properties ◽  
Zno Nps ◽  
Elongation At Break ◽  
Chitosan Films ◽  
By Products ◽  
Different Levels

This work aimed to produce bionanocomposites of chitosan incorporated with zinc oxide nanoparticles (ZnO NPs) synthesized using food industry by-products and to characterize them. Such nanoparticles are highlighted due to their low cost, antimicrobial activity, accessibility, and sustainability synthesis. Four different levels of ZnO NPs (0, 0.5, 1.0, and 2.0% w/w of chitosan) were tested, and the bionanocomposites were characterized in terms of their hydrophobicity, mechanical, optical, and barrier properties. Overall, the incorporation of ZnO NPs changed the composites from brittle to ductile, with enhanced elongation at break and reduced Young Modulus and tensile strength. Thus, ZnO NPs acted as plasticizer, turning the films more flexible, due to the presence of organic compounds on the NPs. This also favored permeability of oxygen and of water vapor, but the good barrier properties were maintained. Optical properties did not change statistically with the ZnO NPs incorporation. Thus, the characterization presented in this paper may contribute to support a decision on the choice of the material’s final application.

Size-Independent Unipolar and Bipolar Resistive Switching Behaviors in ZnO Nanowires

2019 ◽  
Vol 48 (6) ◽  
pp. 4057-4063 ◽  
Author(s):  
Oradee Srikimkaew ◽  
Sartanee Suebka ◽  
Panithan Sriborriboon ◽  
Narathon Khemasiri ◽  
Panita Kasamechonchung ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Zno Nanowires ◽  
Bipolar Resistive Switching

Photo-Induced Multiple-State Memory Behaviour in Non-Volatile Bipolar Resistive-Switching Devices

2018 ◽  
Vol 18 (4) ◽  
pp. 2650-2656 ◽  
Author(s):  
Xuejiao Zhang ◽  
Zhiwei Xu ◽  
Bai Sun ◽  
Jianjun Liu ◽  
Yanyan Cao ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Multiple State ◽  
Switching Devices
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