Wurtzite to Zinc Blende Phase Transition in GaAs Nanowires Induced by Epitaxial Burying

Nano Letters ◽  
2008 ◽  
Vol 8 (6) ◽  
pp. 1638-1643 ◽  
Author(s):  
Gilles Patriarche ◽  
Frank Glas ◽  
Maria Tchernycheva ◽  
Corinne Sartel ◽  
Ludovic Largeau ◽  
...  
Keyword(s):  
Phase Transition ◽  
Zinc Blende ◽  
Gaas Nanowires

Distribution of zinc-blende twins and wurtzite segments in GaAs nanowires probed by X-ray nanodiffraction

2013 ◽  
Vol 7 (10) ◽  
pp. 860-863 ◽  
Author(s):  
Andreas Biermanns ◽  
Dina Carbone ◽  
Steffen Breuer ◽  
Vincent L. R. Jacques ◽  
Tobias Schulli ◽  
...  
Keyword(s):  
X Ray ◽  
Zinc Blende ◽  
Gaas Nanowires

Stacking-Faults-Free Zinc Blende GaAs Nanowires

Nano Letters ◽  
2009 ◽  
Vol 9 (1) ◽  
pp. 215-219 ◽  
Author(s):  
Hadas Shtrikman ◽  
Ronit Popovitz-Biro ◽  
Andrey Kretinin ◽  
Moty Heiblum
Keyword(s):  
Stacking Faults ◽  
Zinc Blende ◽  
Gaas Nanowires ◽  
Free Zinc

Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon

2017 ◽  
Vol 395 ◽  
pp. 195-199 ◽  
Author(s):  
J.C. Piñero ◽  
D. Araújo ◽  
C.E. Pastore ◽  
M. Gutierrez ◽  
C. Frigeri ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Zinc Blende ◽  
Gaas Nanowires

Substrates Effect on the Phase Transition of GaN Thin Films by Sputter Deposition

2019 ◽  
Vol 971 ◽  
pp. 79-84
Author(s):  
Chun Guang Zhang
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Nitrogen Atmosphere ◽  
Sputter Deposition ◽  
X Ray Diffraction ◽  
Pure Nitrogen ◽  
X Ray ◽  
Zinc Blende ◽  
Planar Magnetron ◽  
Pure Nitrogen Atmosphere

As a promising third generation semiconductor material, gallium nitride (GaN) has become a research hotspot in optoelectronic field nowadays. In this paper, GaN thin films were grown by radio frequency (RF) planar magnetron sputtering of a powder GaN target in a pure nitrogen atmosphere at (0.2 – 2.0) Pa, (10 - 100) W onto various substrates such as GaAs (100), Si (100), Si (111), Al2O3(0001) and glass without any buffer layer. A clear phase transition from the metastable cubic zinc-blende (c - ZB) to the stable hexagonal wurtzite (h - WZ) dependence on substrates has been found in the GaN thin films. And the phase transition of GaN films were studied by X-ray diffraction (XRD), photoluminescence (PL) and Raman spectroscopy.

scholarly journals Determination of GaAs zinc blende/wurtzite band offsets utilizing GaAs nanowires with an axial GaAsSb insert

2017 ◽  
Vol 122 (24) ◽  
pp. 245102 ◽  
Author(s):  
L. Ahtapodov ◽  
H. Kauko ◽  
A. M. Munshi ◽  
B. O. Fimland ◽  
A. T. J. van Helvoort ◽  
...  
Keyword(s):  
Band Offsets ◽  
Zinc Blende ◽  
Gaas Nanowires

Phase transition in SiC from zinc-blende to rock-salt structure and implications for carbon-rich extrasolar planets

2017 ◽  
Vol 102 (11) ◽  
pp. 2230-2234 ◽  
Author(s):  
Yuto Kidokoro ◽  
Koichiro Umemoto ◽  
Kei Hirose ◽  
Yasuo Ohishi
Keyword(s):  
Phase Transition ◽  
Rock Salt ◽  
Extrasolar Planets ◽  
Rock Salt Structure ◽  
Zinc Blende ◽  
Salt Structure

PRESSURE-INDUCED METALLIZATION AND SUPERCONDUCTIVITY IN InP AND InN

2011 ◽  
Vol 25 (04) ◽  
pp. 573-587
Author(s):  
K. IYAKUTTI ◽  
V. REJILA ◽  
M. RAJARAJESWARI ◽  
C. NIRMALA LOUIS ◽  
S. MAHALAKSHMI
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
Structural Phase Transition ◽  
Electronic Band Structure ◽  
Indium Nitride ◽  
Structural Phase ◽  
Superconducting Transition ◽  
Electronic Band ◽  
Zinc Blende ◽  
Lmto Method

The electronic band structure, structural phase transition, metallization and superconducting transition of cubic zinc blende-type indium phosphide ( InP ) and indium nitride ( InN ), under pressure, are studied using TB-LMTO method. These indium compounds become metals and superconductors under high pressure but before that they undergo structural phase transition from ZnS to NaCl structure. The ground-state properties and band gap values are compared with the experimental and previous theoretical results. From our analysis, it is found that the metallization pressure increases with increase of lattice constant. The superconducting transition temperatures (Tc) of InP and InN are obtained as a function of pressure for both the ZnS and NaCl structures and these compounds are identified as pressure-induced superconductors. When pressure is increased Tc increases in both the normal ( ZnS ) and high pressure ( NaCl ) structures. The dependence of Tc on electron–phonon mass enhancement factor λ shows that InP and InN are electron–phonon mediated superconductors. The non-occurrence of metallization, phase transition and onset of superconductivity simultaneously in InP and InN are confirmed.

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