Distribution of zinc-blende twins and wurtzite segments in GaAs nanowires probed by X-ray nanodiffraction

2013 ◽  
Vol 7 (10) ◽  
pp. 860-863 ◽  
Author(s):  
Andreas Biermanns ◽  
Dina Carbone ◽  
Steffen Breuer ◽  
Vincent L. R. Jacques ◽  
Tobias Schulli ◽  
...  
Keyword(s):  
X Ray ◽  
Zinc Blende ◽  
Gaas Nanowires

Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction

2015 ◽  
Vol 22 (1) ◽  
pp. 67-75 ◽  
Author(s):  
Martin Köhl ◽  
Philipp Schroth ◽  
Andrey A. Minkevich ◽  
Jean-Wolfgang Hornung ◽  
Emmanouil Dimakis ◽  
...  
Keyword(s):  
Interplanar Spacing ◽  
Stacking Sequence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zinc Blende ◽  
Gaas Nanowires ◽  
Mean Diameter ◽  
Order Of Magnitude ◽  
Focused Beam

In GaAs nanowires grown along the cubic [111]cdirection, zinc blende and wurtzite arrangements have been observed in their stacking sequence, since the energetic barriers for nucleation are typically of similar order of magnitude. It is known that the interplanar spacing of the (111)cGa (or As) planes in the zinc blende polytype varies slightly from the wurtzite polytype. However, different values have been reported in the literature. Here, the ratio of the interplanar spacing of these polytypes is extracted based on X-ray diffraction measurements for thin GaAs nanowires with a mean diameter of 18–25 nm. The measurements are performed with a nano-focused beam which facilitates the separation of the scattering of nanowires and of parasitic growth. The interplanar spacing of the (111)cGa (or As) planes in the wurtzite arrangement in GaAs nanowires is observed to be 0.66% ± 0.02% larger than in the zinc blende arrangement.

scholarly journals Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams

2013 ◽  
Vol 46 (4) ◽  
pp. 887-892 ◽  
Author(s):  
Genziana Bussone ◽  
Rüdiger Schott ◽  
Andreas Biermanns ◽  
Anton Davydok ◽  
Dirk Reuter ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Lattice Spacing ◽  
Molecular Beam ◽  
Grazing Incidence ◽  
Lattice Parameter ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Nanowires

Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au-implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice spacing in the substrate compared with the expected unstrained value. This suggests the presence of a compressed region due to Au implantation.

X-ray study of the modulated structure in quenched Ga2Te3 with a defect zinc-blende lattice

2009 ◽  
Vol 57 (5) ◽  
pp. 1392-1398 ◽  
Author(s):  
Yo Otaki ◽  
Yuu Yanadori ◽  
Yusuke Seki ◽  
Kazuki Yamamoto ◽  
Shoji Kashida
Keyword(s):  
Modulated Structure ◽  
X Ray ◽  
Zinc Blende

Stacking-Faults-Free Zinc Blende GaAs Nanowires

Nano Letters ◽  
2009 ◽  
Vol 9 (1) ◽  
pp. 215-219 ◽  
Author(s):  
Hadas Shtrikman ◽  
Ronit Popovitz-Biro ◽  
Andrey Kretinin ◽  
Moty Heiblum
Keyword(s):  
Stacking Faults ◽  
Zinc Blende ◽  
Gaas Nanowires ◽  
Free Zinc

Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon

2017 ◽  
Vol 395 ◽  
pp. 195-199 ◽  
Author(s):  
J.C. Piñero ◽  
D. Araújo ◽  
C.E. Pastore ◽  
M. Gutierrez ◽  
C. Frigeri ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Zinc Blende ◽  
Gaas Nanowires

Substrates Effect on the Phase Transition of GaN Thin Films by Sputter Deposition

2019 ◽  
Vol 971 ◽  
pp. 79-84
Author(s):  
Chun Guang Zhang
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Nitrogen Atmosphere ◽  
Sputter Deposition ◽  
X Ray Diffraction ◽  
Pure Nitrogen ◽  
X Ray ◽  
Zinc Blende ◽  
Planar Magnetron ◽  
Pure Nitrogen Atmosphere

As a promising third generation semiconductor material, gallium nitride (GaN) has become a research hotspot in optoelectronic field nowadays. In this paper, GaN thin films were grown by radio frequency (RF) planar magnetron sputtering of a powder GaN target in a pure nitrogen atmosphere at (0.2 – 2.0) Pa, (10 - 100) W onto various substrates such as GaAs (100), Si (100), Si (111), Al2O3(0001) and glass without any buffer layer. A clear phase transition from the metastable cubic zinc-blende (c - ZB) to the stable hexagonal wurtzite (h - WZ) dependence on substrates has been found in the GaN thin films. And the phase transition of GaN films were studied by X-ray diffraction (XRD), photoluminescence (PL) and Raman spectroscopy.

Wurtzite to Zinc Blende Phase Transition in GaAs Nanowires Induced by Epitaxial Burying

Nano Letters ◽  
2008 ◽  
Vol 8 (6) ◽  
pp. 1638-1643 ◽  
Author(s):  
Gilles Patriarche ◽  
Frank Glas ◽  
Maria Tchernycheva ◽  
Corinne Sartel ◽  
Ludovic Largeau ◽  
...  
Keyword(s):  
Phase Transition ◽  
Zinc Blende ◽  
Gaas Nanowires

scholarly journals X-ray detection with zinc-blende (cubic) GaN Schottky diodes

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
T. Gohil ◽  
J. Whale ◽  
G. Lioliou ◽  
S. V. Novikov ◽  
C. T. Foxon ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
X Ray ◽  
Zinc Blende ◽  
Cubic Gan

scholarly journals Threefold rotational symmetry in hexagonally shaped core–shell (In,Ga)As/GaAs nanowires revealed by coherent X-ray diffraction imaging

2017 ◽  
Vol 50 (3) ◽  
pp. 673-680 ◽  
Author(s):  
Arman Davtyan ◽  
Thilo Krause ◽  
Dominik Kriegner ◽  
Ali Al-Hassan ◽  
Danial Bahrami ◽  
...  
Keyword(s):  
Phase Contrast ◽  
Rotational Symmetry ◽  
Core Shell ◽  
The Finite Element Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Threefold Symmetry ◽  
Gaas Nanowires ◽  
Diffraction Imaging ◽  
Scattering Phase

Coherent X-ray diffraction imaging at symmetrichhhBragg reflections was used to resolve the structure of GaAs/In0.15Ga0.85As/GaAs core–shell–shell nanowires grown on a silicon (111) substrate. Diffraction amplitudes in the vicinity of GaAs 111 and GaAs 333 reflections were used to reconstruct the lost phase information. It is demonstrated that the structure of the core–shell–shell nanowire can be identified by means of phase contrast. Interestingly, it is found that both scattered intensity in the (111) plane and the reconstructed scattering phase show an additional threefold symmetry superimposed with the shape function of the investigated hexagonal nanowires. In order to find the origin of this threefold symmetry, elasticity calculations were performed using the finite element method and subsequent kinematic diffraction simulations. These suggest that a non-hexagonal (In,Ga)As shell covering the hexagonal GaAs core might be responsible for the observation.

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