scholarly journals Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

2009 ◽  
Vol 80 (24) ◽  
Author(s):  
I. Zardo ◽  
S. Conesa-Boj ◽  
F. Peiro ◽  
J. R. Morante ◽  
J. Arbiol ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Polarization Dependence ◽  
Strain Effects ◽  
Selection Rules ◽  
Zinc Blende ◽  
Gaas Nanowires

Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowires

2017 ◽  
Vol 96 (16) ◽  
Author(s):  
Rawa Tanta ◽  
Caroline Lindberg ◽  
Sebastian Lehmann ◽  
Jessica Bolinsson ◽  
Miguel R. Carro-Temboury ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Stacking Fault ◽  
Micro Raman Spectroscopy ◽  
Fault Density ◽  
Gaas Nanowires

scholarly journals Polarization Dependence of Low-Frequency Vibrations from Multiple Faces in an Organic Single Crystal

Crystals ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 425 ◽  
Author(s):  
Nemtsov ◽  
Aviv ◽  
Mastai ◽  
Tischler
Keyword(s):  
Raman Spectroscopy ◽  
Intermolecular Interactions ◽  
Signal Intensity ◽  
Structural Information ◽  
Low Frequency ◽  
Incident Beam ◽  
Optical Filters ◽  
Polarization Dependence ◽  
Raman Signal ◽  
Shear Modes

Recent developments in optical filters have enabled the facile use of Raman spectroscopy for detection of low frequency (LF) vibrational modes. LF-Raman spectroscopy offers fast and sensitive characterization of LF vibrations, and enables the measurement of single microcrystals and detection of defects. It is useful for probing intermolecular interactions in crystals, which are lower in energy, such as hydrogen bonds, shear modes, and breathing modes. Crystal excitation from multiple faces allows learning the orientation of intermolecular interactions, as polarization dependence varies with the polarizability of the interactions along the planes. Elucidating the orientations of the intermolecular interactions in organic crystals is essential for guiding the reactions or adsorption to a specific crystal face. In this study, we investigated the dependence of the LF-Raman signal intensity on the orientation of an organic single microcrystal of L-alanine. Three incident beam directions provided the orientations of the intermolecular interactions by analyzing the corresponding LF-Raman spectra. The signal intensity correlated well with the proximity between the incident beam’s direction and the orientations of the intermolecular interactions. Excellent compatibility was found between the spectra and simulated orientations based on structural information.

Distribution of zinc-blende twins and wurtzite segments in GaAs nanowires probed by X-ray nanodiffraction

2013 ◽  
Vol 7 (10) ◽  
pp. 860-863 ◽  
Author(s):  
Andreas Biermanns ◽  
Dina Carbone ◽  
Steffen Breuer ◽  
Vincent L. R. Jacques ◽  
Tobias Schulli ◽  
...  
Keyword(s):  
X Ray ◽  
Zinc Blende ◽  
Gaas Nanowires

Raman Spectroscopy of A Novel Diluted Magnetic Semiconductor: Cubic Cd1−xMnxSe.

1989 ◽  
Vol 161 ◽  
Author(s):  
R. G. Alonso ◽  
E.-K. Suh ◽  
H. Pascher ◽  
E. Oh ◽  
A. K. Ramdas ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Zinc Blende ◽  
Spin Flip ◽  
Mode Behavior ◽  
Diluted Magnetic ◽  
Photoluminescence Studies ◽  
Bound Electrons ◽  
Interaction Characteristic

ABSTRACTIn contrast to the bulk diluted magnetic semiconductor (DMS) Cd1−xMnxSe which occurs with the wurtzite structure, its epilayers grown on (001) GaAs substrate by Molecular Beam Epitaxy exhibit the cubic zinc-blende structure. Raman spectroscopy and photoluminescence studies on this novel DMS show (1) a “two-mode” behavior of the zone center optical phonons, (2) the Raman line associated with the spin-flip in the Zeeman split S = 5/2 ground state of Mn2+, and (3) large Raman shifts associated with the spin-flip of donor-bound electrons. The large magnetic field dependence in (3) with saturation at high fields and low temperature shows that the s-d exchange interaction characteristic of DMS's is also manifested strikingly in the zinc-blende phase of Cd1−xMnxSe.

New Developments in Raman Spectroscopy with Lasers: Electronic Transitions

1968 ◽  
Vol 22 (5) ◽  
pp. 438-444 ◽  
Author(s):  
J. A. Koningstein
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
Crystal Field ◽  
Raman Spectra ◽  
Raman Effect ◽  
Electronic Transitions ◽  
New Developments ◽  
Selection Rules ◽  
Phonon Spectra ◽  
Host Lattices

A discussion is given of the Raman spectra of single crystals of yttrium gallium garnet (YGaG), of ytterbrium gallium garnet (YbGaG), and of Yb:YGaG. From a comparison of the spectra it has been possible to separate the phonon spectra of the host lattices from that of an electronic Raman effect which occurs between the crystal field levels of the 2F7/2 manifold of Yb3+ in the garnet crystals. Information with respect to the selection rules governing both types of spectra is given.

scholarly journals Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating

2010 ◽  
Vol 97 (26) ◽  
pp. 263107 ◽  
Author(s):  
Martin Soini ◽  
Ilaria Zardo ◽  
Emanuele Uccelli ◽  
Stefan Funk ◽  
Gregor Koblmüller ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Raman Spectroscopy ◽  
Laser Heating ◽  
Micro Raman Spectroscopy ◽  
Gaas Nanowires

Stacking-Faults-Free Zinc Blende GaAs Nanowires

Nano Letters ◽  
2009 ◽  
Vol 9 (1) ◽  
pp. 215-219 ◽  
Author(s):  
Hadas Shtrikman ◽  
Ronit Popovitz-Biro ◽  
Andrey Kretinin ◽  
Moty Heiblum
Keyword(s):  
Stacking Faults ◽  
Zinc Blende ◽  
Gaas Nanowires ◽  
Free Zinc
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