Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy

Nano Letters ◽  
2004 ◽  
Vol 4 (10) ◽  
pp. 1969-1973 ◽  
Author(s):  
Frank J. Ruess ◽  
Lars Oberbeck ◽  
Michelle Y. Simmons ◽  
Kuan Eng J. Goh ◽  
Alex R. Hamilton ◽  
...  
Keyword(s):  
Scanning Probe Microscopy ◽  
Device Fabrication ◽  
Atomic Scale ◽  
Scanning Probe ◽  
Probe Microscopy

Atomic Scale Imaging: A Hands-On Scanning Probe Microscopy Laboratory for Undergraduates

2003 ◽  
Vol 80 (2) ◽  
pp. 194 ◽  
Author(s):  
Chuan-Jian Zhong ◽  
Li Han ◽  
Mathew M. Maye ◽  
Jin Luo ◽  
Nancy N. Kariuki ◽  
...  
Keyword(s):  
Scanning Probe Microscopy ◽  
Atomic Scale ◽  
Scanning Probe ◽  
Probe Microscopy ◽  
Hands On

scholarly journals Pure hydrogen low-temperature plasma exposure of HOPG and graphene: Graphane formation?

2012 ◽  
Vol 3 ◽  
pp. 852-859 ◽  
Author(s):  
Baran Eren ◽  
Dorothée Hug ◽  
Laurent Marot ◽  
Rémy Pawlak ◽  
Marcin Kisiel ◽  
...  
Keyword(s):  
Low Temperature ◽  
Scanning Probe Microscopy ◽  
Atomic Scale ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Multilayer Graphene ◽  
Pure Hydrogen ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Probe Microscopy

Single- and multilayer graphene and highly ordered pyrolytic graphite (HOPG) were exposed to a pure hydrogen low-temperature plasma (LTP). Characterizations include various experimental techniques such as photoelectron spectroscopy, Raman spectroscopy and scanning probe microscopy. Our photoemission measurement shows that hydrogen LTP exposed HOPG has a diamond-like valence-band structure, which suggests double-sided hydrogenation. With the scanning tunneling microscopy technique, various atomic-scale charge-density patterns were observed, which may be associated with different C–H conformers. Hydrogen-LTP-exposed graphene on SiO2 has a Raman spectrum in which the D peak to G peak ratio is over 4, associated with hydrogenation on both sides. A very low defect density was observed in the scanning probe microscopy measurements, which enables a reverse transformation to graphene. Hydrogen-LTP-exposed HOPG possesses a high thermal stability, and therefore, this transformation requires annealing at over 1000 °C.

Scanning probe microscopy for silicon device fabrication

2005 ◽  
Vol 31 (6-7) ◽  
pp. 505-515 ◽  
Author(s):  
M.Y. Simmons ◽  
F.J. Ruess ◽  
K.E.J. Goh ◽  
T. Hallam ◽  
S.R. Schofield ◽  
...  
Keyword(s):  
Scanning Probe Microscopy ◽  
Device Fabrication ◽  
Scanning Probe ◽  
Probe Microscopy ◽  
Silicon Device

Measurements of In-Plane Material Properties with Scanning Probe Microscopy

MRS Bulletin ◽  
2004 ◽  
Vol 29 (7) ◽  
pp. 472-477 ◽  
Author(s):  
Robert W. Carpick ◽  
Mark A. Eriksson
Keyword(s):  
Scanning Probe Microscopy ◽  
Material Properties ◽  
Lateral Displacement ◽  
Atomic Scale ◽  
Scanning Probe ◽  
Structural Anisotropy ◽  
Probe Microscopy ◽  
Parallel Motion ◽  
Intermittent Contact ◽  
Friction Measurements

AbstractScanning probe microscopy (SPM) was originally conceived as a method for measuring atomic-scale surface topography. Over the last two decades, it has blossomed into an array of techniques that can be used to obtain a rich variety of information about nanoscale material properties. With the exception of friction measurements, these techniques have traditionally depended on tip—sample interactions directed normal to the sample's surface. Recently, researchers have explored several effects arising from interactions parallel to surfaces, usually by deliberately applying a modulated lateral displacement. In fact, some parallel motion is ubiquitous to cantilever-based SPM, due to the tilt of the cantilever. Recent studies, performed in contact, noncontact, and intermittent-contact modes, provide new insights into properties such as structural anisotropy, lateral interactions with surface features, nanoscale shear stress and contact mechanics, and in-plane energy dissipation. The understanding gained from interpreting this behavior has consequences for all cantilever-based scanning probe microscopies.

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