Atomic‐scale wear properties of muscovite mica evaluated by scanning probe microscopy

1994 ◽  
Vol 65 (8) ◽  
pp. 980-982 ◽  
Author(s):  
Shojiro Miyake
Keyword(s):  
Scanning Probe Microscopy ◽  
Atomic Scale ◽  
Scanning Probe ◽  
Wear Properties ◽  
Probe Microscopy ◽  
Muscovite Mica

Atomic Scale Imaging: A Hands-On Scanning Probe Microscopy Laboratory for Undergraduates

2003 ◽  
Vol 80 (2) ◽  
pp. 194 ◽  
Author(s):  
Chuan-Jian Zhong ◽  
Li Han ◽  
Mathew M. Maye ◽  
Jin Luo ◽  
Nancy N. Kariuki ◽  
...  
Keyword(s):  
Scanning Probe Microscopy ◽  
Atomic Scale ◽  
Scanning Probe ◽  
Probe Microscopy ◽  
Hands On

scholarly journals Pure hydrogen low-temperature plasma exposure of HOPG and graphene: Graphane formation?

2012 ◽  
Vol 3 ◽  
pp. 852-859 ◽  
Author(s):  
Baran Eren ◽  
Dorothée Hug ◽  
Laurent Marot ◽  
Rémy Pawlak ◽  
Marcin Kisiel ◽  
...  
Keyword(s):  
Low Temperature ◽  
Scanning Probe Microscopy ◽  
Atomic Scale ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Multilayer Graphene ◽  
Pure Hydrogen ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Probe Microscopy

Single- and multilayer graphene and highly ordered pyrolytic graphite (HOPG) were exposed to a pure hydrogen low-temperature plasma (LTP). Characterizations include various experimental techniques such as photoelectron spectroscopy, Raman spectroscopy and scanning probe microscopy. Our photoemission measurement shows that hydrogen LTP exposed HOPG has a diamond-like valence-band structure, which suggests double-sided hydrogenation. With the scanning tunneling microscopy technique, various atomic-scale charge-density patterns were observed, which may be associated with different C–H conformers. Hydrogen-LTP-exposed graphene on SiO2 has a Raman spectrum in which the D peak to G peak ratio is over 4, associated with hydrogenation on both sides. A very low defect density was observed in the scanning probe microscopy measurements, which enables a reverse transformation to graphene. Hydrogen-LTP-exposed HOPG possesses a high thermal stability, and therefore, this transformation requires annealing at over 1000 °C.

Measurements of In-Plane Material Properties with Scanning Probe Microscopy

MRS Bulletin ◽  
2004 ◽  
Vol 29 (7) ◽  
pp. 472-477 ◽  
Author(s):  
Robert W. Carpick ◽  
Mark A. Eriksson
Keyword(s):  
Scanning Probe Microscopy ◽  
Material Properties ◽  
Lateral Displacement ◽  
Atomic Scale ◽  
Scanning Probe ◽  
Structural Anisotropy ◽  
Probe Microscopy ◽  
Parallel Motion ◽  
Intermittent Contact ◽  
Friction Measurements

AbstractScanning probe microscopy (SPM) was originally conceived as a method for measuring atomic-scale surface topography. Over the last two decades, it has blossomed into an array of techniques that can be used to obtain a rich variety of information about nanoscale material properties. With the exception of friction measurements, these techniques have traditionally depended on tip—sample interactions directed normal to the sample's surface. Recently, researchers have explored several effects arising from interactions parallel to surfaces, usually by deliberately applying a modulated lateral displacement. In fact, some parallel motion is ubiquitous to cantilever-based SPM, due to the tilt of the cantilever. Recent studies, performed in contact, noncontact, and intermittent-contact modes, provide new insights into properties such as structural anisotropy, lateral interactions with surface features, nanoscale shear stress and contact mechanics, and in-plane energy dissipation. The understanding gained from interpreting this behavior has consequences for all cantilever-based scanning probe microscopies.

Characterization of Thin Films Using Different Scanning Probe Microscopy (SPM) Modes

2005 ◽  
Vol 11 (S03) ◽  
pp. 102-105
Author(s):  
D. M. Marulanda ◽  
D. F. Arias ◽  
A. Devia
Keyword(s):  
Thin Films ◽  
Scanning Probe Microscopy ◽  
Imaging Techniques ◽  
Sample Surface ◽  
Real Space ◽  
Atomic Scale ◽  
Scanning Probe ◽  
Space Images ◽  
Adhesion Properties ◽  
Probe Microscopy

Scanning probe microscopy (SPM) is unique among the imaging techniques in which it provides three-dimensional (3-D) real-space images and among surface analysis techniques in which it allows spatially localized measurements of structure and properties. Under optimum conditions, subatomic spatial resolution is achieved. The development given has not been only because of its ability to obtain topographic and structural images of the surface at micro and nano scale, but also for the possibility of performing analysis of superficial properties such as local adhesion properties, chemical heterogeneity, and local mechanical properties [1]. The SPM has different variations depending on the interaction between the tip and the sample surface, such as AFM, which has the ability of showing topographic characteristics at atomic scale, LFM, which measures local friction differences, FMM and PDM that measure differences of local elasticity. The instrument counts with the spectroscopy mode and with this it is possible to obtain Force — distance (F-d) curves that give information about the local elastic properties of the sample surface. In this work, TiN and ZrN thin films grown by the PAPVD by pulsed arc technique were studied, using the AFM, LFM, FMM, PDM and spectroscopy F vs. d techniques.

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