On the Low-Temperature Oxidation and Ultrathin Oxide Growth on Zirconium in the Presence of Atomic Oxygen: A Modeling Study

2008 ◽  
Vol 112 (46) ◽  
pp. 17877-17882 ◽  
Author(s):  
Subramanian K. R. S. Sankaranarayanan ◽  
Shriram Ramanathan
Keyword(s):  
Low Temperature ◽  
Atomic Oxygen ◽  
Oxide Growth ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Ultrathin Oxide ◽  
Modeling Study

Experimental and Modeling Study of Low Temperature Oxidation of Iso-propylbenzene with JSR

2018 ◽  
Vol 32 (8) ◽  
pp. 8781-8788 ◽  
Author(s):  
Bing-Yin Wang ◽  
Yue-Xi Liu ◽  
Jun-Jie Weng ◽  
Zhen-Yu Tian
Keyword(s):  
Low Temperature ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Modeling Study

scholarly journals Experimental and Modeling Study of the Low-Temperature Oxidation of Large Alkanes

2008 ◽  
Vol 22 (4) ◽  
pp. 2258-2269 ◽  
Author(s):  
Joffrey Biet ◽  
Mohammed Hichem Hakka ◽  
Valérie Warth ◽  
Pierre-Alexandre Glaude ◽  
Frédérique Battin-Leclerc
Keyword(s):  
Low Temperature ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Modeling Study

An experimental and modeling study on the low temperature oxidation of surrogate for JP-8 part I: Neat 1,3,5-trimethylbenzene

2018 ◽  
Vol 192 ◽  
pp. 507-516 ◽  
Author(s):  
Bing-Yin Wang ◽  
Dan Yu ◽  
Guan-Fu Pan ◽  
Yue-Xi Liu ◽  
Jun-Jie Weng ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Modeling Study

Improvement of Ultrathin Oxides by Post-Oxidation Annealing

1996 ◽  
Vol 448 ◽  
Author(s):  
Tomoyuki Sakoda ◽  
Mieko Matsumura ◽  
Yasushiro Nishioka
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Gate Oxide ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Oxide Growth ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Ultrathin Oxides ◽  
Voltage Region

AbstractThe low temperature oxidation is effective for the atomically-controlled gate oxide growth. We focused the effects of post-oxidation annealing (POA) and attempted to improve the properties of the low-temperature-grown ultrathin oxides with a thickness of 3nm by POA. POA abruptly reduced the leakage current at a low gate voltage below 1.5V and the interface trap density. The correlation between the interface trap and the leakage current at a low applied voltage region were confirmed. We found that the stressing immunity of the ultrathin oxides grown at a low temperature, 650°C, is drastically improved by POA at 850°C.

Low-Temperature Oxidation of Silicon(100) Substrates Using Atomic Oxygen

1999 ◽  
Vol 592 ◽  
Author(s):  
T. Ueno ◽  
S. Chikamura ◽  
F. Sakuraba ◽  
Y Iwasaki
Keyword(s):  
Low Temperature ◽  
Atomic Oxygen ◽  
Microwave Plasma ◽  
Parabolic Rate Constant ◽  
Oxide Thickness ◽  
Rare Gas ◽  
Processing Temperature ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Plasma Energy

ABSTRACTLow temperature oxidation process of Si(100) substrates using atomic oxygen has been proposed. For the generation of atomic oxygen, microwave plasma remotely attached on the oxidation chamber was used. In the microwave plasma, the large amount of rare gas and a small amount of 02 gas mixture was supplied. The existence of the large amount of rare gas controls the plasma energy to some restricted values associated with the metastable states of the rare gas. Consequently, using Kr as mixed rare gas, atomic oxygen were efficiently generated instead of excited 02 molecules with any vibrational or ionized states. The oxidation kinetics of crystalline Si using this process was shown to be diffusion limiting, even if the oxide thickness was less than several nm. The activation energy of B, which is referred to as the parabolic rate constant, was found to be as low as 0.14eV In addition, lower interface trap density of 2.6 × 1011/cm2/eV at the mid gap could be achieved for the as-grown SiO2/Si(100) interface at the processing temperature of 500C.

scholarly journals Modeling study of the low-temperature oxidation of large methyl esters from C11 to C19

2011 ◽  
Vol 33 (1) ◽  
pp. 391-398 ◽  
Author(s):  
Olivier Herbinet ◽  
Joffrey Biet ◽  
Mohammed Hichem Hakka ◽  
Valérie Warth ◽  
Pierre-Alexandre Glaude ◽  
...  
Keyword(s):  
Low Temperature ◽  
Methyl Esters ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Modeling Study
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