Resistive Switching Induced by Electric Pulses in a Single-Component Molecular Mott Insulator

2015 ◽  
Vol 119 (6) ◽  
pp. 2983-2988 ◽  
Author(s):  
Pablo Stoliar ◽  
Pascale Diener ◽  
Julien Tranchant ◽  
Benoît Corraze ◽  
Benjamin Brière ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mott Insulator ◽  
Single Component ◽  
Electric Pulses

Electric Pulse Induced Resistive Switching in the Narrow Gap Mott Insulator GaMo4S8

2014 ◽  
Vol 617 ◽  
pp. 135-140 ◽  
Author(s):  
Madec Querré ◽  
Benoit Corraze ◽  
Etienne Janod ◽  
Marie Paule Besland ◽  
Julien Tranchant ◽  
...  
Keyword(s):  
Electric Field ◽  
Resistive Switching ◽  
Electric Pulse ◽  
Mott Insulator ◽  
Narrow Gap ◽  
Electric Pulses ◽  
Spinel Compounds ◽  
Non Volatile Memory ◽  
New Type ◽  
Insulator Compound

We report here on resistive switching measurements on GaMo4S8 a lacunar spinel compound with tetrahedral Mo4 clusters filled with 11 electrons. Alike other clustered lacunar spinel compounds with 7 or 8 electrons per cluster, this narrow gap Mott Insulator exhibits both a volatile and a non-volatile unipolar resistive switching. We found that the volatile resistive switching appears above a threshold electric field in the 7 kV/cm range. For electric field much larger than this threshold, the resistive switching becomes non-volatile. Successive electric pulses allow switching back and forth between high and low resistance states. All these results demonstrate that the narrow gap Mott insulator compound GaMo4S8 could be a relevant candidate for a new type of non-volatile memory based on an electric field induced breakdown of the Mott insulating state.

Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8

Nano Letters ◽  
2013 ◽  
Vol 13 (8) ◽  
pp. 3648-3653 ◽  
Author(s):  
Vincent Dubost ◽  
Tristan Cren ◽  
Cristian Vaju ◽  
Laurent Cario ◽  
Benoît Corraze ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mott Insulator ◽  
Insulator Compound

Electric-pulse-induced resistive switching and possible superconductivity in the Mott insulator GaTa4Se8

2008 ◽  
Vol 85 (12) ◽  
pp. 2430-2433 ◽  
Author(s):  
C. Vaju ◽  
L. Cario ◽  
B. Corraze ◽  
E. Janod ◽  
V. Dubost ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Electric Pulse ◽  
Mott Insulator

Mott-memories Based on the Narrow Gap Mott Insulators AM4Q8 (A=Ga, Ge ; M = V, Nb, Ta ; Q = S, Se)

2013 ◽  
Vol 1562 ◽  
Author(s):  
L. Cario ◽  
E. Janod ◽  
J. Tranchant ◽  
P. Stoliar ◽  
M. Rozenberg ◽  
...  
Keyword(s):  
Electric Fields ◽  
Resistive Switching ◽  
Mott Insulators ◽  
Narrow Gap ◽  
Metal Insulator ◽  
Electric Pulses ◽  
New Class ◽  
Electronic Mechanism ◽  
Metal Insulator Metal ◽  
Electrical Pulses

ABSTRACTThe narrow gap Mott insulators AM4Q8 (A = Ga, Ge; M= V, Nb, Ta; Q = S, Se) exhibit very interesting electronic properties when pressurized or chemically doped. We have recently discovered that the application of short electrical pulses on these compounds induces a new phenomenon of volatile or nonvolatile resistive switching. The volatile transition appears above threshold electric fields of a few kV/cm, while for higher electric fields, the resistive switching becomes non-volatile. The application of successive very short electric pulses enables to go back and forth between the high and low resistance states. All our results indicate that the resistive switching discovered in the GaM4Q8 compounds does not match with any previously described mechanisms. Conversely, our recent work shows that the volatile resistive switching is related to a purely electronic mechanism which suggests that the AM4Q8 compounds belong to a new class of Mott-memories for which Joule heating, thermochemical or electrochemical effects are not involved. Finally, it is possible to deposit a thin layer of GaV4S8 and to retrieve the reversible resistive switching on a metal-insulator-metal (MIM) device which proves the potential of this new class of Mott-memories for applications.

Investigation of thermally robust single-component resistive switching organic memory cell

2009 ◽  
Author(s):  
Yongbian Kuang ◽  
Ru Huang ◽  
Dake Wu ◽  
Yu Tang ◽  
Zhe Yu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Cell ◽  
Single Component ◽  
Organic Memory

scholarly journals Non-thermal resistive switching in Mott insulator nanowires

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Yoav Kalcheim ◽  
Alberto Camjayi ◽  
Javier del Valle ◽  
Pavel Salev ◽  
Marcelo Rozenberg ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mott Insulator

scholarly journals Non-volatile resistive switching in the Mott insulator (V1−xCrx)2O3

2018 ◽  
Vol 536 ◽  
pp. 327-330 ◽  
Author(s):  
M. Querré ◽  
J. Tranchant ◽  
B. Corraze ◽  
S. Cordier ◽  
V. Bouquet ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mott Insulator

Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

2017 ◽  
Vol 122 (24) ◽  
pp. 245108 ◽  
Author(s):  
Shida Shen ◽  
Morgan Williamson ◽  
Gang Cao ◽  
Jianshi Zhou ◽  
John Goodenough ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mott Insulator ◽  
Doped Mott Insulator ◽  
Non Destructive

scholarly journals In-situ electron microscopy study of non-volatile resistive switching in Mott insulator VO2

2021 ◽  
Vol 27 (S1) ◽  
pp. 2162-2164
Author(s):  
Shaobo Cheng ◽  
Min-Han Lee ◽  
Xing Li ◽  
Lorenzo Fratino ◽  
Marcelo Rozenberg ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Resistive Switching ◽  
Mott Insulator ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
In Situ Electron Microscopy
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