Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

2017 ◽  
Vol 122 (24) ◽  
pp. 245108 ◽  
Author(s):  
Shida Shen ◽  
Morgan Williamson ◽  
Gang Cao ◽  
Jianshi Zhou ◽  
John Goodenough ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mott Insulator ◽  
Doped Mott Insulator ◽  
Non Destructive

scholarly journals Two-component electronic phase separation in the doped Mott insulator Y1−xCaxTiO3

2021 ◽  
Vol 104 (4) ◽  
Author(s):  
S. Hameed ◽  
J. Joe ◽  
D. M. Gautreau ◽  
J. W. Freeland ◽  
T. Birol ◽  
...  
Keyword(s):  
Phase Separation ◽  
Mott Insulator ◽  
Electronic Phase Separation ◽  
Electronic Phase ◽  
Two Component ◽  
Doped Mott Insulator

scholarly journals Time-reversal symmetry breaking superconducting ground state in the doped Mott insulator on the honeycomb lattice

2013 ◽  
Vol 88 (15) ◽  
Author(s):  
Zheng-Cheng Gu ◽  
Hong-Chen Jiang ◽  
D. N. Sheng ◽  
Hong Yao ◽  
Leon Balents ◽  
...  
Keyword(s):  
Symmetry Breaking ◽  
Ground State ◽  
Time Reversal ◽  
Mott Insulator ◽  
Honeycomb Lattice ◽  
Time Reversal Symmetry ◽  
Doped Mott Insulator

scholarly journals The analytical description of a doped Mott insulator

2019 ◽  
Vol 33 (29) ◽  
pp. 1950355
Author(s):  
Yu-Liang Liu
Keyword(s):  
Green’S Function ◽  
Coulomb Interaction ◽  
Green's Function ◽  
Doping Concentration ◽  
Cuprate Superconductors ◽  
Mott Insulator ◽  
Spin Fluctuations ◽  
Hole Doping ◽  
Charge Fluctuation ◽  
Doped Mott Insulator

With the hierarchical Green’s function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green’s function and related multiple-point correlation functions, and find that the separation of the spin and charge degrees of freedom of the electrons is an intrinsic character of the doped Mott insulator. For enough of large on-site repulsive Coulomb interaction, we show that the spectral weight of the one-particle Green’s function is proportional to the hole doping concentration that is mainly produced by the charge fluctuation of electrons, while the excitation spectrum of the electrons is composed of two parts: One is contributed by the spin fluctuation of the electrons, which is proportional to the hole doping concentration, and another one is coming from the coupling between the charge and spin fluctuations of the electrons that takes the maximum at undoping. All of these low energy/temperature physical properties originate from the strong on-site Coulomb interaction. The present results are consistent with the spectroscopy observations of the cuprate superconductors and the numerical calculations in normal state above the pseudogap regime.

scholarly journals Non-Fermi-liquid regime of a doped Mott insulator

1999 ◽  
Vol 59 (8) ◽  
pp. 5341-5360 ◽  
Author(s):  
Olivier Parcollet ◽  
Antoine Georges
Keyword(s):  
Fermi Liquid ◽  
Mott Insulator ◽  
Doped Mott Insulator

Quantum Correlated Plasmons and Their Tunability in Undoped and Doped Mott-Insulator Cuprates

ACS Photonics ◽  
2019 ◽  
Vol 6 (12) ◽  
pp. 3281-3289 ◽  
Author(s):  
Xinmao Yin ◽  
Chi Sin Tang ◽  
Shengwei Zeng ◽  
Teguh Citra Asmara ◽  
Ping Yang ◽  
...  
Keyword(s):  
Mott Insulator ◽  
Doped Mott Insulator

Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8

Nano Letters ◽  
2013 ◽  
Vol 13 (8) ◽  
pp. 3648-3653 ◽  
Author(s):  
Vincent Dubost ◽  
Tristan Cren ◽  
Cristian Vaju ◽  
Laurent Cario ◽  
Benoît Corraze ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mott Insulator ◽  
Insulator Compound

Resistive Switching Behavior in Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 Ferroelectric Heterostructure

2014 ◽  
Vol 1061-1062 ◽  
pp. 333-336
Author(s):  
Yong Dan Zhu ◽  
Cheng Hu ◽  
An You Zuo
Keyword(s):  
Resistive Switching ◽  
Low Voltage ◽  
Switching Behavior ◽  
Good Time ◽  
Charge Redistribution ◽  
Resistive Switching Behavior ◽  
Switching Performance ◽  
Nonvolatile Memories ◽  
Interface Barrier ◽  
Non Destructive

we report reproducible resistive switching performance and relevant physical mechanism of Pt/La0.7Sr0.3MnO3/Nb0.05Bi0.95FeO3/Nb:SrTiO3 ferroelectric heterostructure which was fabricated by pulsed laser deposition. This device exhibits a nonvolatile resistive switching with a resistance ratio of up to 60 under 2V/-3V pulse voltages at room temperature. Low voltage readout, reliable resistance switching reproducibility and good time retention, indicating promise for non-destructive readout nonvolatile memories. In this metal/p-semiconductor/ferroelectric/n-semiconductor heterostructure, the mechanism of resistive switching behavior would be attributed to the ferroelectric polarization enhanced field-induced charge redistribution at the semiconductor/ferroelectric interface, resulting in the modulation of the interface barrier height. Keywords: Resistive switching, Ferroelectric resistive switching, Ferroelectric field effect.

scholarly journals Localized in-gap state in a single-electron doped Mott insulator

2014 ◽  
Vol 90 (24) ◽  
Author(s):  
Weng-Hang Leong ◽  
Shun-Li Yu ◽  
T. Xiang ◽  
Jian-Xin Li
Keyword(s):  
Mott Insulator ◽  
Single Electron ◽  
Doped Mott Insulator ◽  
Gap State
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