scholarly journals Non-volatile resistive switching in the Mott insulator (V1−xCrx)2O3

2018 ◽  
Vol 536 ◽  
pp. 327-330 ◽  
Author(s):  
M. Querré ◽  
J. Tranchant ◽  
B. Corraze ◽  
S. Cordier ◽  
V. Bouquet ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mott Insulator

Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8

Nano Letters ◽  
2013 ◽  
Vol 13 (8) ◽  
pp. 3648-3653 ◽  
Author(s):  
Vincent Dubost ◽  
Tristan Cren ◽  
Cristian Vaju ◽  
Laurent Cario ◽  
Benoît Corraze ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mott Insulator ◽  
Insulator Compound

Electric-pulse-induced resistive switching and possible superconductivity in the Mott insulator GaTa4Se8

2008 ◽  
Vol 85 (12) ◽  
pp. 2430-2433 ◽  
Author(s):  
C. Vaju ◽  
L. Cario ◽  
B. Corraze ◽  
E. Janod ◽  
V. Dubost ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Electric Pulse ◽  
Mott Insulator

scholarly journals Non-thermal resistive switching in Mott insulator nanowires

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Yoav Kalcheim ◽  
Alberto Camjayi ◽  
Javier del Valle ◽  
Pavel Salev ◽  
Marcelo Rozenberg ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mott Insulator

Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

2017 ◽  
Vol 122 (24) ◽  
pp. 245108 ◽  
Author(s):  
Shida Shen ◽  
Morgan Williamson ◽  
Gang Cao ◽  
Jianshi Zhou ◽  
John Goodenough ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mott Insulator ◽  
Doped Mott Insulator ◽  
Non Destructive

scholarly journals In-situ electron microscopy study of non-volatile resistive switching in Mott insulator VO2

2021 ◽  
Vol 27 (S1) ◽  
pp. 2162-2164
Author(s):  
Shaobo Cheng ◽  
Min-Han Lee ◽  
Xing Li ◽  
Lorenzo Fratino ◽  
Marcelo Rozenberg ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Resistive Switching ◽  
Mott Insulator ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
In Situ Electron Microscopy

Resistive Switching Induced by Electric Pulses in a Single-Component Molecular Mott Insulator

2015 ◽  
Vol 119 (6) ◽  
pp. 2983-2988 ◽  
Author(s):  
Pablo Stoliar ◽  
Pascale Diener ◽  
Julien Tranchant ◽  
Benoît Corraze ◽  
Benjamin Brière ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mott Insulator ◽  
Single Component ◽  
Electric Pulses

Electric Pulse Induced Resistive Switching in the Narrow Gap Mott Insulator GaMo4S8

2014 ◽  
Vol 617 ◽  
pp. 135-140 ◽  
Author(s):  
Madec Querré ◽  
Benoit Corraze ◽  
Etienne Janod ◽  
Marie Paule Besland ◽  
Julien Tranchant ◽  
...  
Keyword(s):  
Electric Field ◽  
Resistive Switching ◽  
Electric Pulse ◽  
Mott Insulator ◽  
Narrow Gap ◽  
Electric Pulses ◽  
Spinel Compounds ◽  
Non Volatile Memory ◽  
New Type ◽  
Insulator Compound

We report here on resistive switching measurements on GaMo4S8 a lacunar spinel compound with tetrahedral Mo4 clusters filled with 11 electrons. Alike other clustered lacunar spinel compounds with 7 or 8 electrons per cluster, this narrow gap Mott Insulator exhibits both a volatile and a non-volatile unipolar resistive switching. We found that the volatile resistive switching appears above a threshold electric field in the 7 kV/cm range. For electric field much larger than this threshold, the resistive switching becomes non-volatile. Successive electric pulses allow switching back and forth between high and low resistance states. All these results demonstrate that the narrow gap Mott insulator compound GaMo4S8 could be a relevant candidate for a new type of non-volatile memory based on an electric field induced breakdown of the Mott insulating state.

1H-NMR study of Mott insulator κ -(ET)2Cu2(CN)3with isotropic triangular lattice

2004 ◽  
Vol 114 ◽  
pp. 377-378 ◽  
Author(s):  
Y. Shimizu ◽  
K. Miyagawa ◽  
K. Oda ◽  
K. Kanoda ◽  
M. Maesato ◽  
...  
Keyword(s):  
1H Nmr ◽  
Triangular Lattice ◽  
Mott Insulator ◽  
Nmr Study
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