Stabilization of Rocksalt CdSe at Atmospheric Pressures via Pseudomorphic Growth

2013 ◽  
Vol 117 (15) ◽  
pp. 7643-7647 ◽  
Author(s):  
Mohnish Pandey ◽  
Raj Ganesh S. Pala
Keyword(s):  
Pseudomorphic Growth

Pseudomorphic growth of Ni films on Cu(001): a quantitative LEED analysis

1996 ◽  
Vol 364 (3) ◽  
pp. 235-241 ◽  
Author(s):  
S. Müller ◽  
B. Schulz ◽  
G. Kostka ◽  
M. Farle ◽  
K. Heinz ◽  
...  
Keyword(s):  
Pseudomorphic Growth

Pseudomorphic growth of Fe monolayers onIr(001)−(1×1): From a fct precursor to a bct film

2007 ◽  
Vol 76 (20) ◽  
Author(s):  
V. Martin ◽  
W. Meyer ◽  
C. Giovanardi ◽  
L. Hammer ◽  
K. Heinz ◽  
...  
Keyword(s):  
Pseudomorphic Growth

scholarly journals Pseudomorphic Growth of a Single Element Quasiperiodic Ultrathin Film on a Quasicrystal Substrate

2004 ◽  
Vol 92 (13) ◽  
Author(s):  
J. Ledieu ◽  
J. T. Hoeft ◽  
D. E. Reid ◽  
J. A. Smerdon ◽  
R. D. Diehl ◽  
...  
Keyword(s):  
Ultrathin Film ◽  
Single Element ◽  
Pseudomorphic Growth

scholarly journals In-place bonded semiconductor membranes as compliant substrates for III–V compound devices

Nanoscale ◽  
2019 ◽  
Vol 11 (8) ◽  
pp. 3748-3756
Author(s):  
Ailton J. Garcia Jr. ◽  
Leonarde N. Rodrigues ◽  
Saimon Filipe Covre da Silva ◽  
Sergio L. Morelhão ◽  
Odilon D. D. Couto Jr. ◽  
...  
Keyword(s):  
Critical Thickness ◽  
Compliant Substrates ◽  
Fundamental Challenge ◽  
Pseudomorphic Growth

Overcoming the critical thickness limit in pseudomorphic growth of lattice mismatched heterostructures is a fundamental challenge in heteroepitaxy.

Transition from island formation to pseudomorphic growth in the submonolayer CdSe/ZnSe multilayer system

2003 ◽  
Vol 83 (9) ◽  
pp. 1728-1730 ◽  
Author(s):  
M. Kim ◽  
J. K. Furdyna ◽  
M. Dobrowolska ◽  
S. Lee ◽  
M. Cheon ◽  
...  
Keyword(s):  
Multilayer System ◽  
Island Formation ◽  
Pseudomorphic Growth

The Role of Misfit Dislocation During Epitaxial Growth

1987 ◽  
Vol 94 ◽  
Author(s):  
D. Cherns
Keyword(s):  
Misfit Dislocation ◽  
Lattice Spacing ◽  
Minimum Energy ◽  
Energy Criterion ◽  
Misfit Dislocations ◽  
Metal Metal ◽  
Correct Account ◽  
Pseudomorphic Growth ◽  
Dislocation Sources

ABSTRACTThe theory of Frank and van der Merwe (FM) in 1949 showed that a minimum energy criterion could explain the pseudomorphic growth of a deposit on a substrate of different lattice spacing and the subsequent relief of strain by misfit dislocations as the deposit thickness increases. Although the “equilibrium” theory is qualitatively correct, account must be taken of actual dislocation sources, which may be complex, and which may be more or less efficient for misfit relief than predicted by the FM model. Moreover, misfit dislocation sources may determine the morphology of the growing film, the interface topology and even the atomic structure of the deposit/substrate interface. These various roles of misfit dislocations are reviewed here with examples from work on metal/metal, semiconductor/semiconductor and metal/semiconductor systems.

Effects of substrate orientation, pseudomorphic growth and superlattice on alloy scattering in modulation doped GaInAs

1991 ◽  
Vol 111 (1-4) ◽  
pp. 466-469 ◽  
Author(s):  
Albert Chin ◽  
T.Y. Chang ◽  
A. Ourmazd ◽  
E.M. Monberg ◽  
A.M. Chang ◽  
...  
Keyword(s):  
Substrate Orientation ◽  
Alloy Scattering ◽  
Pseudomorphic Growth

Extrapolation of critical thickness of GaN thin films from lattice constant data using synchrotron X-ray

1996 ◽  
Vol 423 ◽  
Author(s):  
Chinkyo Kim ◽  
I. K. Robinson ◽  
Jaemin Myoung ◽  
Kyuhwan Shim ◽  
Kyekyoon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Thickness ◽  
Energy Estimate ◽  
Accurate Estimate ◽  
X Ray ◽  
Lattice Constants ◽  
Pseudomorphic Growth ◽  
Sudden Transition ◽  
First Time

AbstractIn some materials, Van der Merwe's equilibrium theory of strain relief is believed to explain the sudden transition from pseudomorphic growth of a thin film to a progressively relaxed state. We show, for the first time for GaN, how an accurate estimate of the critical thickness of a thin film can be extrapolated from suitable measurements of lattice constants as a function of film thickness using synchrotron X-ray. We do this both for an elementary elastic energy function, in which the interactions between the dislocations are ignored, and for a more realistic energy estimate due to Kasper. The method is found to work quantitatively for thin films of GaN on AIN. The critical thickness is determined to be 29 ± 4 Å.

Reliability and Performance of Pseudomorphic Ultraviolet Light Emitting Diodes on Bulk Aluminum Nitride Substrates

2009 ◽  
Vol 1202 ◽  
Author(s):  
Shawn R. Gibb ◽  
James R. Grandusky ◽  
Yongjie Cui ◽  
Mark C. Mendrick ◽  
Leo J. Schowalter
Keyword(s):  
Dislocation Density ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Device Structure ◽  
Light Emitting ◽  
Bulk Crystal Growth ◽  
Low Dislocation Density ◽  
Piezoelectric Effects ◽  
And Performance ◽  
Pseudomorphic Growth

AbstractLow dislocation density epitaxial layers of AlxGa1-xN can be grown pseudomorphically on c-face AlN substrates prepared from high quality, bulk crystals. Here, we will report on initial characterization results from deep ultraviolet (UV) light emitting diodes (LEDs) which have been fabricated and packaged from these structures. As reported previously, pseudomorphic growth and atomically smooth surfaces can be achieved for a full LED device structure with an emission wavelength between 250 nm and 280 nm.A benefit of pseudomorphic growth is the ability to run the devices at high input powers and current densities. The high aluminum content AlxGa1-xN (x∼70%) epitaxial layer can be doped n-type to obtain sheet resistances < 200 Ohms/sq/μm due to the low dislocation density. Bulk crystal growth allows for the ability to fabricate substrates of both polar and non-polar orientations. Non-polar substrates are of particular interest for nitride growth because they eliminate electric field due to spontaneous polarization and piezoelectric effects which limit device performance. Initial studies of epitaxial growth on non-polar substrates will also be presented.

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