Transition from island formation to pseudomorphic growth in the submonolayer CdSe/ZnSe multilayer system

2003 ◽  
Vol 83 (9) ◽  
pp. 1728-1730 ◽  
Author(s):  
M. Kim ◽  
J. K. Furdyna ◽  
M. Dobrowolska ◽  
S. Lee ◽  
M. Cheon ◽  
...  
Keyword(s):  
Multilayer System ◽  
Island Formation ◽  
Pseudomorphic Growth

Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition

1990 ◽  
Vol 48 (4) ◽  
pp. 686-687
Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Irradiation ◽  
High Energy ◽  
Nucleation Mechanism ◽  
Layer By Layer ◽  
Extended Defect ◽  
Island Formation ◽  
Si Substrates ◽  
Transmission Electron

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

Credit Crime Detection By Using Multilayer System

2012 ◽  
Vol 2 (7) ◽  
pp. 177-180
Author(s):  
G ANIL KUMAR G ANIL KUMAR ◽  
◽  
D VENKATESH D VENKATESH ◽  
KANTE RAMESH
Keyword(s):  
Multilayer System ◽  
Crime Detection

Pseudomorphic growth of Ni films on Cu(001): a quantitative LEED analysis

1996 ◽  
Vol 364 (3) ◽  
pp. 235-241 ◽  
Author(s):  
S. Müller ◽  
B. Schulz ◽  
G. Kostka ◽  
M. Farle ◽  
K. Heinz ◽  
...  
Keyword(s):  
Pseudomorphic Growth

EXAFS Study of Co/Ag Multilayers

1993 ◽  
Vol 307 ◽  
Author(s):  
C. L. Foiles ◽  
R. Loloee ◽  
T. I. Morrison
Keyword(s):  
Magnetic Properties ◽  
Significant Role ◽  
Giant Magnetoresistance ◽  
Structural Changes ◽  
Multilayer System ◽  
Basic Form ◽  
Exafs Data ◽  
Simple Scaling ◽  
Exafs Study

ABSTRACTCo EXAFS data for these Co/Ag multilayers exhibit no changes in basic form and obey a simple scaling with Co thickness down to 6Å. Over this same thickness range the giant magnetoresistance and the manner in which magnetization approaches saturation change substantially. These results indicate that local structural changes do not play a significant role in altering the magnetic properties of this multilayer system.

Island formation in chemisorption 1. Chemisorption model

1998 ◽  
Vol 64 (2) ◽  
pp. 261-268 ◽  
Author(s):  
A. N. Salanov ◽  
V. N. Bibin ◽  
N. A. Rudina
Keyword(s):  
Island Formation ◽  
Chemisorption Model

Atomic force microscope studies of CuCl island formation on CaF2(111) substrates

1992 ◽  
Vol 277 (3) ◽  
pp. L63-L69
Author(s):  
William M. Tong ◽  
Eric J. Snyder ◽  
R. Stanley Williams ◽  
Akihisa Yanase ◽  
Yusaburo Segawa ◽  
...  
Keyword(s):  
Atomic Force Microscope ◽  
Island Formation ◽  
Atomic Force
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