Stabilization of Silicon Islands in Silicoaluminophosphates by Proton Redistribution

2012 ◽  
Vol 116 (13) ◽  
pp. 7255-7259 ◽  
Author(s):  
Mahsa Zokaie ◽  
Unni Olsbye ◽  
Karl Petter Lillerud ◽  
Ole Swang
Keyword(s):  
Silicon Islands

scholarly journals A Resonant Pressure Microsensor with a Wide Pressure Measurement Range

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 382
Author(s):  
Chao Xiang ◽  
Yulan Lu ◽  
Chao Cheng ◽  
Junbo Wang ◽  
Deyong Chen ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Measurement Range ◽  
Silicon On Insulator ◽  
Anodic Bonding ◽  
Pressure Measurements ◽  
Quality Factors ◽  
Deep Reactive Ion Etching ◽  
Wide Range ◽  
Form Pressure ◽  
Silicon Islands

This paper presents a resonant pressure microsensor with a wide range of pressure measurements. The developed microsensor is mainly composed of a silicon-on-insulator (SOI) wafer to form pressure-sensing elements, and a silicon-on-glass (SOG) cap to form vacuum encapsulation. To realize a wide range of pressure measurements, silicon islands were deployed on the device layer of the SOI wafer to enhance equivalent stiffness and structural stability of the pressure-sensitive diaphragm. Moreover, a cylindrical vacuum cavity was deployed on the SOG cap with the purpose to decrease the stresses generated during the silicon-to-glass contact during pressure measurements. The fabrication processes mainly contained photolithography, deep reactive ion etching (DRIE), chemical mechanical planarization (CMP) and anodic bonding. According to the characterization experiments, the quality factors of the resonators were higher than 15,000 with pressure sensitivities of 0.51 Hz/kPa (resonator I), −1.75 Hz/kPa (resonator II) and temperature coefficients of frequency of 1.92 Hz/°C (resonator I), 1.98 Hz/°C (resonator II). Following temperature compensation, the fitting error of the microsensor was within the range of 0.006% FS and the measurement accuracy was as high as 0.017% FS in the pressure range of 200 ~ 7000 kPa and the temperature range of −40 °C to 80 °C.

scholarly journals Cavity-BOX SOI: Advanced Silicon Substrate with Pre-Patterned BOX for Monolithic MEMS Fabrication

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 414
Author(s):  
Marta Maria Kluba ◽  
Jian Li ◽  
Katja Parkkinen ◽  
Marcus Louwerse ◽  
Jaap Snijder ◽  
...  
Keyword(s):  
Complex Geometry ◽  
Pressure Sensors ◽  
Silicon On Insulator ◽  
Test Case ◽  
Mems Devices ◽  
Device Layer ◽  
Mems Fabrication ◽  
Silicon Islands ◽  
Design Freedom ◽  
Deep Brain

Several Silicon on Insulator (SOI) wafer manufacturers are now offering products with customer-defined cavities etched in the handle wafer, which significantly simplifies the fabrication of MEMS devices such as pressure sensors. This paper presents a novel cavity buried oxide (BOX) SOI substrate (cavity-BOX) that contains a patterned BOX layer. The patterned BOX can form a buried microchannels network, or serve as a stop layer and a buried hard-etch mask, to accurately pattern the device layer while etching it from the backside of the wafer using the cleanroom microfabrication compatible tools and methods. The use of the cavity-BOX as a buried hard-etch mask is demonstrated by applying it for the fabrication of a deep brain stimulation (DBS) demonstrator. The demonstrator consists of a large flexible area and precisely defined 80 µm-thick silicon islands wrapped into a 1.4 mm diameter cylinder. With cavity-BOX, the process of thinning and separating the silicon islands was largely simplified and became more robust. This test case illustrates how cavity-BOX wafers can advance the fabrication of various MEMS devices, especially those with complex geometry and added functionality, by enabling more design freedom and easing the optimization of the fabrication process.

101-Stage 2 µm gate ring oscillators in laser-grown silicon islands embedded in SiO2

1982 ◽  
Vol 3 (9) ◽  
pp. 270-272 ◽  
Author(s):  
K. Kugimiya ◽  
G. Fuse ◽  
S. Akiyama ◽  
A. Nishikawa
Keyword(s):  
Ring Oscillators ◽  
Silicon Islands

Optical Characterization of Silicon-On-Insulator

1996 ◽  
Vol 446 ◽  
Author(s):  
G. G. Li ◽  
A. R. Forouhi ◽  
I. Bloomer ◽  
A. Auberton-Herve ◽  
A. Wittkower
Keyword(s):  
Optical Constants ◽  
Crystalline Silicon ◽  
Interface Roughness ◽  
Silicon On Insulator ◽  
Native Oxide ◽  
Buried Oxide ◽  
A New Technique ◽  
Silicon Islands ◽  
Destructive Measurement ◽  
Non Destructive

AbstractA new technique, referred to as the “n&k Method”, is used to characterize the thin films comprising Silicon-on-Insulator (SOI). With the “n&k Method”, a non-destructive robust measurement of the thickness of both the crystalline silicon top-layer and the buried oxide under-layer, the spectra of refractive index (n), and extinction coefficient (k), and the smoothness of the interfaces is established. The “n&k Method” determines these quantities simultaneously and without multiple solutions for thickness. The non-destructive measurement of interface roughness between the buried oxide under-layer and the silicon substrate is associated with the presence of silicon islands. The native oxide that forms on SOI is also detected and measured. No initial user's input for thickness and optical constants are required in order to obtain these results. The spectra of optical constants are measured accurately and reliably.

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