B−N Distance Potential of CH3CN−BF3Revisited:  Resolving the Experiment−Theory Structure Discrepancy and Modeling the Effects of Low-Dielectric Environments

2007 ◽  
Vol 111 (6) ◽  
pp. 1408-1415 ◽  
Author(s):  
James A. Phillips ◽  
Christopher J. Cramer
Keyword(s):  
Theory Structure ◽  
Low Dielectric

Modification of Low ĸ Materials for ULSI Multilevel Interconnects by Ion Implantation

2002 ◽  
Vol 716 ◽  
Author(s):  
Alok Nandini ◽  
U. Roy ◽  
A. Mallikarjunan ◽  
A. Kumar ◽  
J. Fortin ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Ion Implantation ◽  
Dielectric Materials ◽  
Dramatic Improvement ◽  
Force Microscopy ◽  
Low Dielectric ◽  
Quantitative Measurements ◽  
Hardness Increase ◽  
Xerogel Films ◽  
Ion Species

AbstractThin films of low dielectric constant (κ) materials such as Xerogel (ĸ=1.76) and SilkTM (ĸ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 x 1015 cm -2 and 1 x 1016 cm -2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low ĸ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5x hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 19-27 ◽  
Author(s):  
Wei William Lee ◽  
Paul S. Ho
Keyword(s):  
Packing Density ◽  
Propagation Delay ◽  
Single Chip ◽  
Crosstalk Noise ◽  
Metal Line ◽  
Total Delay ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Interconnect Delay ◽  
Interconnect Technology

Continuing improvement of microprocessor performance historically involves a decrease in the device size. This allows greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However higher packing density requires a much larger increase in the number of interconnects. This has led to an increase in the number of wiring levels and a reduction in the wiring pitch (sum of the metal line width and the spacing between the metal lines) to increase the wiring density. The problem with this approach is that—as device dimensions shrink to less than 0.25 μm (transistor gate length)—propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. The smaller line dimensions increase the resistivity (R) of the metal lines, and the narrower interline spacing increases the capacitance (C) between the lines. Thus although the speed of the device will increase as the feature size decreases, the interconnect delay becomes the major fraction of the total delay and limits improvement in device performance.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILD) as well as alternative architectures have been proposed to replace the current Al(Cu) and SiO2 interconnect technology.

Skin–core structured fluorinated MWCNTs: a nanofiller towards a broadband dielectric material with a high dielectric constant and low dielectric loss

2018 ◽  
Vol 6 (9) ◽  
pp. 2370-2378 ◽  
Author(s):  
Yang Liu ◽  
Cheng Zhang ◽  
Benyuan Huang ◽  
Xu Wang ◽  
Yulong Li ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Epoxy Composite ◽  
Low Dielectric ◽  
High Dielectric

A novel skin–core structured fluorinated MWCNT nanofiller was prepared to fabricate epoxy composite with broadband high dielectric constant and low dielectric loss.

scholarly journals Debye-Hückel Free Energy of an Electric Double Layer with Discrete Charges Located at a Dielectric Interface

Membranes ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 129
Author(s):  
Guilherme Volpe Bossa ◽  
Sylvio May
Keyword(s):  
Free Energy ◽  
Double Layer ◽  
Electric Double Layer ◽  
Low Dielectric Constant ◽  
Surface Charges ◽  
Dielectric Interface ◽  
Charge Densities ◽  
Low Dielectric ◽  
Poisson Boltzmann ◽  
The Continuum

Poisson–Boltzmann theory provides an established framework to calculate properties and free energies of an electric double layer, especially for simple geometries and interfaces that carry continuous charge densities. At sufficiently small length scales, however, the discreteness of the surface charges cannot be neglected. We consider a planar dielectric interface that separates a salt-containing aqueous phase from a medium of low dielectric constant and carries discrete surface charges of fixed density. Within the linear Debye-Hückel limit of Poisson–Boltzmann theory, we calculate the surface potential inside a Wigner–Seitz cell that is produced by all surface charges outside the cell using a Fourier-Bessel series and a Hankel transformation. From the surface potential, we obtain the Debye-Hückel free energy of the electric double layer, which we compare with the corresponding expression in the continuum limit. Differences arise for sufficiently small charge densities, where we show that the dominating interaction is dipolar, arising from the dipoles formed by the surface charges and associated counterions. This interaction propagates through the medium of a low dielectric constant and alters the continuum power of two dependence of the free energy on the surface charge density to a power of 2.5 law.

scholarly journals Construction of a Three-Dimensional BaTiO3 Network for Enhanced Permittivity and Energy Storage of PVDF Composites

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3585
Author(s):  
Xueqing Bi ◽  
Lujia Yang ◽  
Zhen Wang ◽  
Yanhu Zhan ◽  
Shuangshuang Wang ◽  
...  
Keyword(s):  
Energy Storage ◽  
Polyvinylidene Fluoride ◽  
Dielectric Breakdown ◽  
Breakdown Strength ◽  
Sol Gel ◽  
Three Dimensional ◽  
Low Dielectric ◽  
Energy Storage Properties ◽  
Discharge Energy Density ◽  
Pure Pvdf

Three-dimensional BaTiO3 (3D BT)/polyvinylidene fluoride (PVDF) composite dielectrics were fabricated by inversely introducing PVDF solution into a continuous 3D BT network, which was simply constructed via the sol-gel method using a cleanroom wiper as a template. The effect of the 3D BT microstructure and content on the dielectric and energy storage properties of the composites were explored. The results showed that 3D BT with a well-connected continuous network and moderate grain sizes could be easily obtained by calcining a barium source containing a wiper template at 1100 °C for 3 h. The as-fabricated 3D BT/PVDF composites with 21.1 wt% content of 3D BT (3DBT–2) exhibited the best comprehensive dielectric and energy storage performances. An enhanced dielectric constant of 25.3 at 100 Hz, which was 2.8 times higher than that of pure PVDF and 1.4 times superior to the conventional nano–BT/PVDF 25 wt% system, was achieved in addition with a low dielectric loss of 0.057 and a moderate dielectric breakdown strength of 73.8 kV·mm−1. In addition, the composite of 3DBT–2 exhibited the highest discharge energy density of 1.6 × 10−3 J·cm−3 under 3 kV·mm−1, which was nearly 4.5 times higher than that of neat PVDF.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

Role of the Electrode Morphology, Thickness and Orientation in the Ferroelectric Performance of Epitaxial Pb(Zr,Ti)O3 Thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
Cesar Guerrero ◽  
Florencio Sánchez ◽  
José Roldán ◽  
Frank Güell ◽  
María V. García-Cuenca
Keyword(s):  
Electrode Materials ◽  
Stabilized Zirconia ◽  
Large Thickness ◽  
Low Dielectric ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Ferroelectric Layer ◽  
Ferroelectric Capacitors ◽  
Lattice Matched

AbstractA comparison of pulsed laser deposited PbZr0.53Ti0.47O3 (PZT) thin film capacitors with SrRuO3 (SRO) and LaNiO3 (LNO) electrodes on (001) yttria-stabilized zirconia (YSZ) and lattice matched (001) LaAlO3 substrates is presented. Both electrode materials allow for the formation of ferroelectric capacitors with large remnant polarization (20-30 μC/cm2) and negligible fatigue, although slight differences arise regarding the promotion of either the rhombohedral or tetragonal phases of PZT. Far more crucial seems to be the tendency of SrRuO3 to develop a rougher surface at either small (<30 nm) or large thickness (>100 nm), and on YSZ substrates. In those cases a highly defective and possibly low dielectric interface forms between the electrode and the ferroelectric layer, resulting in greatly degraded ferroelectric performance. LaNiO3 is free from these limitations except for the cracks forming at very large thickness (>300 nm), and therefore appears as a more versatile electrode material.

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