N(4S) Formation following the 193.3-nm ArF Laser Irradiation of NO and NO2and Its Application to Kinetic Studies of N(4S) Reactions with NO and NO2

2005 ◽  
Vol 109 (48) ◽  
pp. 10897-10902 ◽  
Author(s):  
Tomoki Nakayama ◽  
Kenshi Takahashi ◽  
Yutaka Matsumi ◽  
Kazuhiko Shibuya
Keyword(s):  
Laser Irradiation ◽  
Kinetic Studies ◽  
Arf Laser

Cargon and sulfur isotope separation by ArF laser irradiation of CS2

1979 ◽  
Vol 10 (4) ◽  
pp. 359-364 ◽  
Author(s):  
T.R. Loree ◽  
J.H. Clark ◽  
K.B. Butterfield ◽  
J.L. Lyman ◽  
R. Engleman
Keyword(s):  
Laser Irradiation ◽  
Sulfur Isotope ◽  
Isotope Separation ◽  
Arf Laser

EuO Nanocrystal Formation under ArF Laser Irradiation

2003 ◽  
Vol 32 (8) ◽  
pp. 708-709 ◽  
Author(s):  
Yasuchika Hasegawa ◽  
Supitcha Thongchant ◽  
Tomoharu Kataoka ◽  
Yuji Wada ◽  
Tomoyuki Yatsuhashi ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Nanocrystal Formation ◽  
Arf Laser

Accelerated life time testing of fused silica upon ArF laser irradiation

2008 ◽  
Author(s):  
Ch. Mühlig ◽  
W. Triebel ◽  
S. Kufert ◽  
U. Natura
Keyword(s):  
Laser Irradiation ◽  
Life Time ◽  
Fused Silica ◽  
Accelerated Life ◽  
Arf Laser

Ablation and cone formation mechanism on CR-39 by ArF laser irradiation

2015 ◽  
Vol 117 (9) ◽  
pp. 093104 ◽  
Author(s):  
B. Shakeri Jooybari ◽  
H. Afarideh ◽  
M. Lamehi-Rachti ◽  
M. Ghergherehchi
Keyword(s):  
Laser Irradiation ◽  
Formation Mechanism ◽  
Cone Formation ◽  
Arf Laser

VUV absorption tail changes of fused silica during ArF laser irradiation

2000 ◽  
Vol 278 (1-3) ◽  
pp. 115-118 ◽  
Author(s):  
F Kühnlenz ◽  
S Bark-Zollmann ◽  
H Stafast ◽  
W Triebel
Keyword(s):  
Laser Irradiation ◽  
Fused Silica ◽  
Arf Laser ◽  
Absorption Tail

Arf Laser-Induced Chemical-Vapor Deposition of Tungsten for Gate Electrodes

1988 ◽  
Vol 129 ◽  
Author(s):  
H. Matsuhashi ◽  
S. Nishikawa ◽  
S. Ohno
Keyword(s):  
Chemical Vapor Deposition ◽  
Laser Irradiation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mos Capacitors ◽  
Incident Laser Power ◽  
Partial Pressures ◽  
Reaction Orders ◽  
Arf Laser ◽  
The Difference

ABSTRACTThe deposition of W films by ArF laser-induced chemical-vapor deposition (LCVD) was investigated as a function of incident laser power, WF6 and H2 partial pressures, and substrate temperature. The deposition of W films by LCVD is discussed dividing that into two parts, thermal CVD (TCVD) and photon assisted CVD (PhCVD). The rate of PhCVD has been defined as the difference between the rates with and without laser irradiation. The reaction orders for PhCVD are 1, 0 with respect to WF6 and H2 partial pressures, respectively, and the rate linearly increases with increase in laser repetition rate. The activation energy in PhCVD is 0.17 eV. These facts indicate that, in LCVD, PhCVD takes place independently of TCVD and that the deposition rate in PhCVD is determined by the formation of F radicals in the dissociation of WF6 molecules by laser irradiation.MOS capacitors with LCVD-W gates were fabricated and their characteristics were compared with those with sputtered-W gates. It was shown that the level of contamination due to mobile ions in the capacitor with the LCVD-W gate was extremely low.

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