EuO Nanocrystal Formation under ArF Laser Irradiation

2003 ◽  
Vol 32 (8) ◽  
pp. 708-709 ◽  
Author(s):  
Yasuchika Hasegawa ◽  
Supitcha Thongchant ◽  
Tomoharu Kataoka ◽  
Yuji Wada ◽  
Tomoyuki Yatsuhashi ◽  
...  
1979 ◽  
Vol 10 (4) ◽  
pp. 359-364 ◽  
Author(s):  
T.R. Loree ◽  
J.H. Clark ◽  
K.B. Butterfield ◽  
J.L. Lyman ◽  
R. Engleman

2008 ◽  
Author(s):  
Ch. Mühlig ◽  
W. Triebel ◽  
S. Kufert ◽  
U. Natura

2005 ◽  
Vol 109 (48) ◽  
pp. 10897-10902 ◽  
Author(s):  
Tomoki Nakayama ◽  
Kenshi Takahashi ◽  
Yutaka Matsumi ◽  
Kazuhiko Shibuya

2015 ◽  
Vol 117 (9) ◽  
pp. 093104 ◽  
Author(s):  
B. Shakeri Jooybari ◽  
H. Afarideh ◽  
M. Lamehi-Rachti ◽  
M. Ghergherehchi

2000 ◽  
Vol 278 (1-3) ◽  
pp. 115-118 ◽  
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F Kühnlenz ◽  
S Bark-Zollmann ◽  
H Stafast ◽  
W Triebel

2018 ◽  
Vol 60 (4) ◽  
pp. 637
Author(s):  
К.Н. Денисова ◽  
А.С. Ильин ◽  
М.Н. Мартышов ◽  
А.С. Воронцов

AbstractA comparative analysis of the effect of femtosecond laser irradiation on the structure and conductivity of undoped and boron-doped hydrogenated amorphous silicon ( a -Si: H) is performed. It is demonstrated that the process of nanocrystal formation in the amorphous matrix under femtosecond laser irradiation is initiated at lower laser energy densities in undoped a -Si: H samples. The differences in conductivity between undoped and doped a -Si: H samples vanish almost completely after irradiation with an energy density of 150–160 mJ/cm^2.


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