scholarly journals Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires

2014 ◽  
Vol 116 (23) ◽  
pp. 235701 ◽  
Author(s):  
H. Tanaka ◽  
S. Mori ◽  
N. Morioka ◽  
J. Suda ◽  
T. Kimoto
Keyword(s):  
Band Structure ◽  
Hole Mobility ◽  
Cross Sectional ◽  
Germanium Nanowires

scholarly journals Comprehensive Study of Cross-Section Dependent Effective Masses for Silicon Based Gate-All-Around Transistors

2019 ◽  
Vol 9 (9) ◽  
pp. 1895 ◽  
Author(s):  
Oves Badami ◽  
Cristina Medina-Bailon ◽  
Salim Berrada ◽  
Hamilton Carrillo-Nunez ◽  
Jaeyhun Lee ◽  
...  
Keyword(s):  
Band Structure ◽  
Cross Section ◽  
Electronic Band Structure ◽  
Strong Dependence ◽  
Simulation Software ◽  
Cross Sectional ◽  
Electronic Band ◽  
Effective Masses ◽  
Simulation Engine ◽  
Silicon Based

The use of bulk effective masses in simulations of the modern-day ultra-scaled transistor is erroneous due to the strong dependence of the band structure on the cross-section dimensions and shape. This has to be accounted for in transport simulations due to the significant impact of the effective masses on quantum confinement effects and mobility. In this article, we present a methodology for the extraction of the electron effective masses, in both confinement and the transport directions, from the simulated electronic band structure of the nanowire channel. This methodology has been implemented in our in-house three-dimensional (3D) simulation engine, NESS (Nano-Electronic Simulation Software). We provide comprehensive data for the effective masses of the silicon-based nanowire transistors (NWTs) with technologically relevant cross-sectional area and transport orientations. We demonstrate the importance of the correct effective masses by showing its impact on mobility and transfer characteristics.

scholarly journals Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 2917
Author(s):  
Ahmad Echresh ◽  
Himani Arora ◽  
Florian Fuchs ◽  
Zichao Li ◽  
René Hübner ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Inductively Coupled Plasma ◽  
Effective Cross Section ◽  
Electrical Characterization ◽  
Depletion Region ◽  
Cross Sectional ◽  
Germanium Nanowires ◽  
Inductively Coupled ◽  
Shape Dependence ◽  
Sectional Shape

The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and inductively coupled plasma reactive ion etching. The configuration allows two equivalent measurement sets to check the homogeneity of GeNWs in terms of resistivity and the Hall coefficient. The highest Hall mobility and carrier concentration of GeNWs at 5 K were in the order of 100 cm2/(Vs) and 4×1019cm−3, respectively. With a decreasing nanowire width, the resistivity increases and the carrier concentration decreases, which is attributed to carrier scattering in the region near the surface. By comparing the measured data with simulations, one can conclude the existence of a depletion region, which decreases the effective cross-section of GeNWs. Moreover, the resistivity of thin GeNWs is strongly influenced by the cross-sectional shape.

Valence Band Structure and Hole Mobility of Strained Ge/(111)Si1–xGex

2015 ◽  
Vol 12 (10) ◽  
pp. 3201-3205
Author(s):  
Song Jian-Jun ◽  
Zhu He ◽  
Gao Xiang-Yu ◽  
Zhang He-Ming ◽  
Hu Hui-Yong ◽  
...  
Keyword(s):  
Band Structure ◽  
Valence Band ◽  
Hole Mobility ◽  
Valence Band Structure

Calculation of hole mobility in doped SiGe alloys using a Monte Carlo method with a bond orbital band structure

1994 ◽  
Vol 76 (8) ◽  
pp. 4749-4752 ◽  
Author(s):  
Tsyr‐Shyang Liou ◽  
Tahui Wang ◽  
Chun‐Yen Chang
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Band Structure ◽  
Hole Mobility
Sign in / Sign up

Export Citation Format

Share Document