Complex Formation between Magnesocene (MgCp2) and NH3:  Implications for p-Type Doping of Group III Nitrides and the Mg Memory Effect

2004 ◽  
Vol 108 (22) ◽  
pp. 4873-4877 ◽  
Author(s):  
George T. Wang ◽  
J. Randall Creighton
Keyword(s):  
Complex Formation ◽  
Memory Effect ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
P Type

scholarly journals Electronic Structure of Rock Salt Alloys of Rare Earth and Group III Nitrides

Materials ◽  
2020 ◽  
Vol 13 (21) ◽  
pp. 4997
Author(s):  
Maciej J. Winiarski
Keyword(s):  
First Principles ◽  
Electronic Structures ◽  
Group Iii Nitrides ◽  
Linear Increase ◽  
Lattice Parameters ◽  
Ionic Radii ◽  
Band Gap Engineering ◽  
Group Iii ◽  
Cubic Lattice ◽  
P Type

Lattice parameters and electronic properties of RE1−xAxN alloys, where RE = Sc, Y, Lu and A = Al, Ga, and In, have been derived from first principles. The materials are expected to exhibit a linear decrease in cubic lattice parameters and a tendency to a linear increase in band gaps as a function of composition. These effects are connected with a strong mismatch between ionic radii of the RE and group III elements, which leads to chemical pressure in the mixed RE and group III nitrides. The electronic structures of such systems are complex, i.e., some contributions of the d- and p-type states, coming from RE and A ions, respectively, are present in their valence band regions. The findings discussed in this work may encourage further experimental efforts of band gap engineering in RE-based nitrides via doping with group III elements.

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

1997 ◽  
Vol 26 (11) ◽  
pp. 1266-1269 ◽  
Author(s):  
J. D. Mackenzie ◽  
L. Abbaschian ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Plasma Characteristics

Pts-Oi Complex Formation in Platinum Diffused Silicon

2005 ◽  
Vol 864 ◽  
Author(s):  
Wilfried Vervisch ◽  
Laurent Ventura ◽  
Bernard Pichaud ◽  
Gérard Ducreux ◽  
André Lhorte
Keyword(s):  
Thermal Treatment ◽  
Complex Formation ◽  
Cooling Rate ◽  
Point Defects ◽  
Diffusion Processes ◽  
Silicon Wafers ◽  
Doping Behaviour ◽  
Simulation Results ◽  
Dopant Atoms ◽  
P Type

AbstractWhen platinum is diffused at temperatures higher than 900°C in Cz or FZ low doped n-type silicon samples, which are then cooled slowly in the range [1-10]°C/min, a p-type doping leading to the formation of a pn junction can be observed by spreading resistance measurement. The lower the cooling rate, the deeper the junction is. This junction disappears after a second thermal treatment finishing with a quenching step. A platinum related complex formation is considered to explain this reversible doping behaviour. Different possible interactions between platinum and other impurities such as dopant atoms, intrinsic point defects, and common residual impurities (C, Oi, transition metallic atoms) are studied here. Experimental results from Pt diffusion processes in different qualities of silicon wafers, and simulation results, lead to the conclusion that the platinum related p-type doping effect is due to the formation of a Pts-Oi complex.

Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects

2015 ◽  
Vol 1790 ◽  
pp. 13-18
Author(s):  
Shun Sasaki ◽  
Shailesh Madisetti ◽  
Vadim Tokranov ◽  
Michael Yakimov ◽  
Makoto Hirayama ◽  
...  
Keyword(s):  
Surface Defects ◽  
Lattice Mismatch ◽  
Chemical Properties ◽  
Antiphase Domain ◽  
Hole Transport ◽  
Heteroepitaxial Growth ◽  
Group Iii ◽  
Similar Chemical ◽  
Unintentional Doping ◽  
P Type

ABSTRACTGroup III-Sb compound semiconductors are promising materials for future CMOS circuits. Especially, In1-xGaxSb is considered as a complimentary p-type channel material to n-type In1-xGaxAs MOSFET due to the superior hole transport properties and similar chemical properties in III-Sb’s to those of InGaAs. The heteroepitaxial growth of In1-xGaxSb on Si substrate has significant advantage for volume fabrication of III-V ICs. However large lattice mismatch between InGaSb and Si results in many growth-related defects (micro twins, threading dislocations and antiphase domain boundaries); these defects also act as deep acceptor levels. Accordingly, unintentional doping in InGaSb films causes additional scattering, increase junction leakages and affects the interface properties. In this paper, we studied the correlations between of defects and hole carrier densities in GaSb and strained In1-xGaxSb quantum well layers by using various designs of metamorphic superlattice buffers.

Low-density nanoporous phases of group-III nitrides built from sodalite cage clusters

2013 ◽  
Vol 15 (21) ◽  
pp. 8186 ◽  
Author(s):  
Zhifeng Liu ◽  
Xinqiang Wang ◽  
Gaobin Liu ◽  
Ping Zhou ◽  
Jian Sui ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
Low Density ◽  
Group Iii

Group III Nitrides

2017 ◽  
pp. 209-228
Author(s):  
Ferdinand Scholz
Keyword(s):  
Group Iii Nitrides ◽  
Group Iii
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