Low-density nanoporous phases of group-III nitrides built from sodalite cage clusters

2013 ◽  
Vol 15 (21) ◽  
pp. 8186 ◽  
Author(s):  
Zhifeng Liu ◽  
Xinqiang Wang ◽  
Gaobin Liu ◽  
Ping Zhou ◽  
Jian Sui ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
Low Density ◽  
Group Iii

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

1997 ◽  
Vol 26 (11) ◽  
pp. 1266-1269 ◽  
Author(s):  
J. D. Mackenzie ◽  
L. Abbaschian ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Plasma Characteristics

Group III Nitrides

2017 ◽  
pp. 209-228
Author(s):  
Ferdinand Scholz
Keyword(s):  
Group Iii Nitrides ◽  
Group Iii

Growth Kinetics and Thermal Stress in AlN Bulk Crystal Growth

2002 ◽  
Author(s):  
Bei Wu ◽  
Ronghui Ma ◽  
Hui Zhang ◽  
Michael Dudley ◽  
Raoul Schlesser ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Temperature Distribution ◽  
Stress Level ◽  
Grown Crystal ◽  
Power Level ◽  
Chemical Species ◽  
Group Iii Nitrides ◽  
Minor Effect ◽  
Group Iii

Group III nitrides, such as GaN, AlN and InGaN, have attracted a lot of attention due to the development of blue-green and ultraviolet light emitting diodes (LEDs) and lasers. In this paper, an integrated model has developed based on the conservation of momentum, mass, chemical species and energy together with necessary boundary conditions that account for heterogeneous chemical reactions both at the source and seed surfaces. The simulation results have been compared with temperature measurements for different power levels and flow rates in a reactor specially designed for nitride crystal growth at NCSU. It is evident that the heat power level affects the entire temperature distribution greatly while the flow rate has minor effect on the temperature distribution. The results also show that the overall thermal stress level is higher than the critical resolved shear stress, which means thermal elastic stress can be a major source of dislocation density in the as-grown crystal. The stress level is strongly dependent on the temperature gradient in the as-grown crystal. Results are correlated well with defects showing in an X-ray topograph for the AlN wafer.

Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System

2018 ◽  
Vol 52 (7) ◽  
pp. 942-949 ◽  
Author(s):  
V. V. Emtsev ◽  
E. V. Gushchina ◽  
V. N. Petrov ◽  
N. A. Tal’nishnih ◽  
A. E. Chernyakov ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
Group Iii ◽  
Fractal Percolation ◽  
Device Structures

Group-IV and group-V substitutional impurities in cubic group-III nitrides

2003 ◽  
Vol 68 (8) ◽  
Author(s):  
L. E. Ramos ◽  
J. Furthmüller ◽  
J. R. Leite ◽  
L. M. R. Scolfaro ◽  
F. Bechstedt
Keyword(s):  
Group Iii Nitrides ◽  
Group Iv ◽  
Group V ◽  
Group Iii ◽  
Substitutional Impurities
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