Pts-Oi Complex Formation in Platinum Diffused Silicon

2005 ◽  
Vol 864 ◽  
Author(s):  
Wilfried Vervisch ◽  
Laurent Ventura ◽  
Bernard Pichaud ◽  
Gérard Ducreux ◽  
André Lhorte
Keyword(s):  
Thermal Treatment ◽  
Complex Formation ◽  
Cooling Rate ◽  
Point Defects ◽  
Diffusion Processes ◽  
Silicon Wafers ◽  
Doping Behaviour ◽  
Simulation Results ◽  
Dopant Atoms ◽  
P Type

AbstractWhen platinum is diffused at temperatures higher than 900°C in Cz or FZ low doped n-type silicon samples, which are then cooled slowly in the range [1-10]°C/min, a p-type doping leading to the formation of a pn junction can be observed by spreading resistance measurement. The lower the cooling rate, the deeper the junction is. This junction disappears after a second thermal treatment finishing with a quenching step. A platinum related complex formation is considered to explain this reversible doping behaviour. Different possible interactions between platinum and other impurities such as dopant atoms, intrinsic point defects, and common residual impurities (C, Oi, transition metallic atoms) are studied here. Experimental results from Pt diffusion processes in different qualities of silicon wafers, and simulation results, lead to the conclusion that the platinum related p-type doping effect is due to the formation of a Pts-Oi complex.

Point Defects and Diffusion in Semiconductors

MRS Bulletin ◽  
1991 ◽  
Vol 16 (11) ◽  
pp. 42-46 ◽  
Author(s):  
Ulrich M. Gösele ◽  
Teh Y. Tan
Keyword(s):  
Point Defects ◽  
Integrated Circuit ◽  
Diffusion Processes ◽  
Semiconductor Industry ◽  
Surface Oxidation ◽  
Optoelectronic Device ◽  
Intrinsic Point Defects ◽  
Impurity Atoms ◽  
Circuit Fabrication ◽  
Dopant Atoms

Semiconductor devices generally contain n- and p-doped regions. Doping is accomplished by incorporating certain impurity atoms that are substitutionally dissolved on lattice sites of the semiconductor crystal. In defect terminology, dopant atoms constitute extrinsic point defects. In this sense, the whole semiconductor industry is based on controlled introduction of specific point defects. This article addresses intrinsic point defects, ones that come from the native crystal. These defects govern the diffusion processes of dopants in semiconductors. Diffusion is the most basic process associated with the introduction of dopants into semiconductors. Since silicon and gallium arsenide are the most widely used semiconductors for microelectronic and optoelectronic device applications, this article will concentrate on these two materials and comment only briefly on other semiconductors.A main technological driving force for dealing with intrinsic point defects stems from the necessity to simulate dopant diffusion processes accurately. Intrinsic point defects also play a role in critical integrated circuit fabrication processes such as ion-implantation or surface oxidation. In these processes, as well as during crystal growth, intrinsic point defects may agglomerate and negatively impact the performance of electronic or photovoltaic devices. If properly controlled, point defects and their agglomerates may also be used to accomplish positive goals such as enhancing device performance or processing yield.

Magnetic penetration investigation on the bands made of amorphous magnetically soft (CoFe)75Si10B15 alloys under the thermal processing

2021 ◽  
pp. 2150045
Author(s):  
A. P. Abdullayev ◽  
V. İ. Ahmadov ◽  
A. A. Isayeva
Keyword(s):  
Magnetic Properties ◽  
Thermal Treatment ◽  
Cooling Rate ◽  
Thermal Processing ◽  
Diffusion Processes ◽  
Storage Temperature ◽  
Crystalline Layer ◽  
Cooling Speed ◽  
Magnetic Penetration ◽  
Storage Temperatures

The effect of isothermal storage temperature and cooling rate on thermal processing on the maximum magnetic penetration in amorphous bands of magnetically soft [Formula: see text] alloys was studied. The dependence of maximum magnetic penetration on the isothermal storage temperature is determined using diffusion processes which occur during thermal processing at the certain isothermal storage temperatures. It is clear that increase of cooling rate directly impacts on the magnetic properties. Magnetic properties have been approached after thermal treatment of the surface when the surface is amorphous and at a certain optical thickness during formation of the amorphous-crystalline layer due to the increasing cooling speed.

On the modeling of hydrogen diffusion processes and complex formation in p-type crystalline silicon

1991 ◽  
Vol 170 (1-4) ◽  
pp. 129-134 ◽  
Author(s):  
R. Rizk ◽  
P. de Mierry ◽  
D. Ballutaud ◽  
M. Aucouturier ◽  
D. Mathiot
Keyword(s):  
Complex Formation ◽  
Hydrogen Diffusion ◽  
Diffusion Processes ◽  
Crystalline Silicon ◽  
P Type

The Influence of Isothermal Annealing and Structural Defects on Properties of Amorphous Fe78Si11B11 with High Magnetization Saturation

2017 ◽  
Vol 68 (3) ◽  
pp. 478-482 ◽  
Author(s):  
Katarzyna Bloch
Keyword(s):  
Numerical Analysis ◽  
Thermal Treatment ◽  
Saturation Magnetization ◽  
Isothermal Annealing ◽  
Diffusion Processes ◽  
Structural Defects ◽  
High Saturation Magnetization ◽  
Magnetization Curves ◽  
Magnetization Saturation ◽  
Very High

This paper presents the results of numerical analysis of the primary magnetization curves, which were obtained under the assumptions of the theory of approach to ferromagnetic saturation described in by H. Kronm�ller. Test samples of the Fe78Si11B11 alloy were tape-shaped materials, which were subjected to isothermal annealing, not causing their crystallization. The investigated ribbons (tapes) were characterized by a very high saturation magnetization value of approximately 2T, which the thermal treatment has increased by about 10%. It was found that reason for the change of saturation magnetization of the investigated samples was the local rearrangement of atoms due to diffusion processes leading to the release of free volumes to the surface and combining of them into larger unstable defects called pseudodislocational dipoles.

Study of the electrical properties of  Cz p-type solar-grade silicon wafers against the high-temperature processes

2021 ◽  
Vol 127 (6) ◽  
Author(s):  
Mohamed Maoudj ◽  
Djoudi Bouhafs ◽  
Nacer Eddine Bourouba ◽  
Abdelhak Hamida-Ferhat ◽  
Abdelkader El Amrani
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Silicon Wafers ◽  
Solar Grade Silicon ◽  
High Temperature Processes ◽  
Grade Silicon ◽  
P Type

scholarly journals Simulation of Diffusion Processes in Chemical and Thermal Processing of Machine Parts

Processes ◽  
2021 ◽  
Vol 9 (4) ◽  
pp. 698
Author(s):  
Kateryna Kostyk ◽  
Michal Hatala ◽  
Viktoriia Kostyk ◽  
Vitalii Ivanov ◽  
Ivan Pavlenko ◽  
...  
Keyword(s):  
Mathematical Modeling ◽  
Temperature Distribution ◽  
Thermal Treatment ◽  
Diffusion Processes ◽  
Nitrogen Concentration ◽  
The Body ◽  
Functional Dependencies ◽  
Technological Parameters ◽  
Gas Nitriding ◽  
Temperature State

To solve a number of technological issues, it is advisable to use mathematical modeling, which will allow us to obtain the dependences of the influence of the technological parameters of chemical and thermal treatment processes on forming the depth of the diffusion layers of steels and alloys. The paper presents mathematical modeling of diffusion processes based on the existing chemical and thermal treatment of steel parts. Mathematical modeling is considered on the example of 38Cr2MoAl steel after gas nitriding. The gas nitriding technology was carried out at different temperatures for a duration of 20, 50, and 80 h in the SSHAM-12.12/7 electric furnace. When modeling the diffusion processes of surface hardening of parts in general, providing a specifically given distribution of nitrogen concentration over the diffusion layer’s depth from the product’s surface was solved. The model of the diffusion stage is used under the following assumptions: The diffusion coefficient of the saturating element primarily depends on temperature changes; the metal surface is instantly saturated to equilibrium concentrations with the saturating atmosphere; the surface layer and the entire product are heated unevenly, that is, the product temperature is a function of time and coordinates. Having satisfied the limit, initial, and boundary conditions, the temperature distribution equations over the diffusion layer’s depth were obtained. The final determination of the temperature was solved by an iterative method. Mathematical modeling allowed us to get functional dependencies for calculating the temperature distribution over the depth of the layer and studying the influence of various factors on the body’s temperature state of the body.

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

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