Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects

2015 ◽  
Vol 1790 ◽  
pp. 13-18
Author(s):  
Shun Sasaki ◽  
Shailesh Madisetti ◽  
Vadim Tokranov ◽  
Michael Yakimov ◽  
Makoto Hirayama ◽  
...  
Keyword(s):  
Surface Defects ◽  
Lattice Mismatch ◽  
Chemical Properties ◽  
Antiphase Domain ◽  
Hole Transport ◽  
Heteroepitaxial Growth ◽  
Group Iii ◽  
Similar Chemical ◽  
Unintentional Doping ◽  
P Type

ABSTRACTGroup III-Sb compound semiconductors are promising materials for future CMOS circuits. Especially, In1-xGaxSb is considered as a complimentary p-type channel material to n-type In1-xGaxAs MOSFET due to the superior hole transport properties and similar chemical properties in III-Sb’s to those of InGaAs. The heteroepitaxial growth of In1-xGaxSb on Si substrate has significant advantage for volume fabrication of III-V ICs. However large lattice mismatch between InGaSb and Si results in many growth-related defects (micro twins, threading dislocations and antiphase domain boundaries); these defects also act as deep acceptor levels. Accordingly, unintentional doping in InGaSb films causes additional scattering, increase junction leakages and affects the interface properties. In this paper, we studied the correlations between of defects and hole carrier densities in GaSb and strained In1-xGaxSb quantum well layers by using various designs of metamorphic superlattice buffers.

Growth of GaAs on Si and its Application to FETs and LEDs

1986 ◽  
Vol 67 ◽  
Author(s):  
Masahiro Akiyama ◽  
Yoshihiro Kawarada ◽  
Seiji Nishi ◽  
Takashi Ueda ◽  
Katsuzo Kaminishi
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Antiphase Domain ◽  
Thin Layers ◽  
The Other ◽  
Heteroepitaxial Growth ◽  
Si Substrates ◽  
Large Lattice ◽  
Strained Layer Superlattice ◽  
Large Lattice Mismatch

In recent years, the heteroepitaxial growth of GaAs layers on Si substrates has been gained an increasing interest [1 - 14]. GaAs is one of the most important III-V materials and has been well studied and used for optical and electrical devices. On the other hand, with Si we have large size wafers of superior quality and sophisticated technologies and Si is a main material for semiconductor industries. Therefore, GaAs/Si system has possibilities for realizing new types of functional devices or ICs with GaAs and Si devices. This system, however, has two serious problems. One is the large lattice mismatch of about 4 % between these materials and the other is the polar on nonpolar problem i.e., the formation of an antiphase domain disorder. It was reported that when (211)-oriented Si substrates were used, there was no problem of the formation of an antiphase domain structure 5. For growing materials on lattice mismatched substrates, it was reported that the thin layers deposited at low temperatures were effective to relax the lattice mismatches for the systems such as SiC on Si[15] and Si on saphire [16]. In GaAs/Si system, the Ge buffer layer has been used to relax the lattice mismatch[17 - 22] It was also reported that the composite strained layer superlattice with GaP/GaAsP and GaAsP/GaAs was very effective as a buffer layer[23 - 25].

Defects in Mg-Doped InP and GaInAs Grown by Omvpe

1986 ◽  
Vol 90 ◽  
Author(s):  
Fred R. Bacher ◽  
H. Cholan ◽  
Wallace B. Leigh
Keyword(s):  
Lattice Mismatch ◽  
Deep Level ◽  
Shallow Donor ◽  
Band Edge Emission ◽  
Pressure System ◽  
Group Iii ◽  
Heavily Doped ◽  
Transient Spectroscopy ◽  
P Type ◽  
Lattice Matched

ABSTRACTWe report on the defects present in doped InP and GaInAs grown by organometallic vapor phase epitaxy (OMVPE). The material was grown in an atmospheric pressure system using group III trimethyl sources, arsine and phosphine. Bis(cyclopentadienyl) magnesium (Cp2Mg) was present as a p-type source of magnesium. Defects in as-grown material were characterized using photoluminescence (PL), Hall-effect, and deep level transient spectroscopy (DLTS). Various levels of Mg doping were investigated, ranging from 5 × 1015 to 1 × 1019 cm−3. Radiative defects were observed at 77 K corresponding to PL emission from conduction band/shallow donor to acceptor levels including emission at 1.37 eV identified as the shallow hydrogenic acceptor, and emission lines at 1.3 eV and 1.0 eV in heavily doped material. Corresponding hole traps in InP:Mg were observed by DLTS having thermal activation energies of 0.20 and 0.40 eV, the 0.40 eV trap being the dominant defect in p-type InP. In GaInAs grown near lattice-matched to InP, radiative emission is also observed from deep centers 100 meV from band edge emission. This emission is observed to be related to lattice-mismatch of the ternary with the InP, and is found to be accentuated and broadened in GaInAs doped with Mg.

Defects in Crystals

1968 ◽  
Vol 26 ◽  
pp. 244-245
Author(s):  
Kenneth R. Lawless
Keyword(s):  
Electron Microscope ◽  
Point Defects ◽  
Surface Defects ◽  
Chemical Properties ◽  
Material Point ◽  
Crystal Defects ◽  
Defects In Crystals ◽  
Irradiation Effects ◽  
Normal Lattice ◽  
Line Defects

One of the most important applications of the electron microscope in recent years has been to the observation of defects in crystals. Replica techniques have been widely utilized for many years for the observation of surface defects, but more recently the most striking use of the electron microscope has been for the direct observation of internal defects in crystals, utilizing the transmission of electrons through thin samples.Defects in crystals may be classified basically as point defects, line defects, and planar defects, all of which play an important role in determining the physical or chemical properties of a material. Point defects are of two types, either vacancies where individual atoms are missing from lattice sites, or interstitials where an atom is situated in between normal lattice sites. The so-called point defects most commonly observed are actually aggregates of either vacancies or interstitials. Details of crystal defects of this type are considered in the special session on “Irradiation Effects in Materials” and will not be considered in detail in this session.

scholarly journals Shellfish Chitosan Potential in Wine Clarification

2021 ◽  
Vol 11 (10) ◽  
pp. 4417
Author(s):  
Veronica Vendramin ◽  
Gaia Spinato ◽  
Simone Vincenzi
Keyword(s):  
Molecular Structure ◽  
Chemical Properties ◽  
Allergic Reactions ◽  
Chitin Content ◽  
Deacetylation Degree ◽  
Physical Chemical ◽  
Similar Chemical ◽  
Fungal Chitosan ◽  
Significant Difference ◽  
Fish Industry

Chitosan is a chitin-derived fiber, extracted from the shellfish shells, a by-product of the fish industry, or from fungi grown in bioreactors. In oenology, it is used for the control of Brettanomyces spp., for the prevention of ferric, copper, and protein casse and for clarification. The International Organisation of Vine and Wine established the exclusive utilization of fungal chitosan to avoid the eventuality of allergic reactions. This work focuses on the differences between two chitosan categories, fungal and animal chitosan, characterizing several samples in terms of chitin content and degree of deacetylation. In addition, different acids were used to dissolve chitosans, and their effect on viscosity and on the efficacy in wine clarification were observed. The results demonstrated that even if fungal and animal chitosans shared similar chemical properties (deacetylation degree and chitin content), they showed different viscosity depending on their molecular weight but also on the acid used to dissolve them. A significant difference was discovered on their fining properties, as animal chitosans showed a faster and greater sedimentation compared to the fungal ones, independently from the acid used for their dissolution. This suggests that physical–chemical differences in the molecular structure occur between the two chitosan categories and that this significantly affects their technologic (oenological) properties.

The Use of Metallography for Examination of Causes of Surface Defects on Visual Parts

2017 ◽  
Vol 270 ◽  
pp. 107-111
Author(s):  
Zuzana Andršová ◽  
Pavel Kejzlar
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Surface Defects ◽  
Chemical Properties ◽  
Physical And Chemical Properties ◽  
Visual Appearance ◽  
Visual Defects ◽  
Physical And Chemical ◽  
Microscopic Techniques ◽  
And Chemical Properties

Many of currently manufactured components intended for automotive, must not only meet the requirements on functionality, but also considerable demands on the visual appearance. Parts are subjected to thorough inspection and suppliers are forced to deal with causes of a very slight visual defects. When examining the defects, it is necessary to use a whole range of advanced analytical methods and procedures previously used only for identification of the physical and chemical properties and structure of the material. This paper deals with several examples which have been solved. It focuses especially on the use of demanding metallographic sample preparation from components with surface defects, examining the defects on the cross-section using mainly microscopic techniques and determining the causes of their generation. These results then serve as a basis for modification of the technology and thus they are the tool for significant reduction of amount of NOK parts.

InGaP/GaAs hole barrier asymmetry determined by (002) X-ray reflections and p-type DB-RTD hole transport

1998 ◽  
Vol 195 (1-4) ◽  
pp. 117-123 ◽  
Author(s):  
P. Velling ◽  
G. Janßen ◽  
M. Agethen ◽  
W. Prost ◽  
F.J. Tegude
Keyword(s):  
Hole Transport ◽  
X Ray ◽  
P Type

scholarly journals Progress on the Synthesis and Application of CuSCN Inorganic Hole Transport Material in Perovskite Solar Cells

Materials ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 2592 ◽  
Author(s):  
Funeka Matebese ◽  
Raymond Taziwa ◽  
Dorcas Mutukwa
Keyword(s):  
Solar Cells ◽  
Energy Levels ◽  
Perovskite Solar Cells ◽  
Hole Mobility ◽  
Cost Effective ◽  
Vital Role ◽  
Hole Transport ◽  
Recombination Processes ◽  
Short Synthesis ◽  
P Type

P-type wide bandgap semiconductor materials such as CuI, NiO, Cu2O and CuSCN are currently undergoing intense research as viable alternative hole transport materials (HTMs) to the spiro-OMeTAD in perovskite solar cells (PSCs). Despite 23.3% efficiency of PSCs, there are still a number of issues in addition to the toxicology of Pb such as instability and high-cost of the current HTM that needs to be urgently addressed. To that end, copper thiocyanate (CuSCN) HTMs in addition to robustness have high stability, high hole mobility, and suitable energy levels as compared to spiro-OMeTAD HTM. CuSCN HTM layer use affordable materials, require short synthesis routes, require simple synthetic techniques such as spin-coating and doctor-blading, thus offer a viable way of developing cost-effective PSCs. HTMs play a vital role in PSCs as they can enhance the performance of a device by reducing charge recombination processes. In this review paper, we report on the current progress of CuSCN HTMs that have been reported to date in PSCs. CuSCN HTMs have shown enhanced stability when exposed to weather elements as the solar devices retained their initial efficiency by a greater percentage. The efficiency reported to date is greater than 20% and has a potential of increasing, as well as maintaining thermal stability.

MBE Growth and Characterization of SxGe1−x Multilayer Structures on Si (100) for Use as a Substrate for GaAs Heteroepitaxy

1991 ◽  
Vol 220 ◽  
Author(s):  
J. B. Posthill ◽  
D. P. Malta ◽  
R. Venkatasubramanian ◽  
P. R. Sharps ◽  
M. L. Timmons ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Lattice Mismatch ◽  
Antiphase Domain ◽  
Multilayer Structures ◽  
Si Substrate ◽  
Mbe Growth ◽  
Etch Pit ◽  
Layer Structures ◽  
Domain Boundaries

ABSTRACTInvestigation has continued into the use of SixGe1−x multilayer structures (MLS) as a buffer layer between a Si substrate and a GaAs epitaxial layer in order to accommodate the 4.1% lattice mismatch. SixGe1−x 4-layer and 5-layer structures terminating in pure Ge have been grown using molecular beam epitaxy. Subsequent GaAs heteroepitaxy has allowed evaluation of these various GaAs/SixGe1−xMLS/Si (100) structures. Antiphase domain boundaries have been eliminated using vicinal Si (100) substrates tilted 6° off-axis toward [011], and the etch pit density in GaAs grown on a 5-layer SixGe1−x MLS on vicinal Si (lOO) was measured to be 106 cm−2.

scholarly journals Simulation and Analysis of GaN Wafer Bowing on Sapphire Substrate

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Wang Bin ◽  
Qu Yu-xuan ◽  
Hu Shi-gang ◽  
Tang Zhi-jun ◽  
Li Jin ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Mass Production ◽  
Large Scale ◽  
Lattice Mismatch ◽  
Wafer Surface ◽  
Heteroepitaxial Growth ◽  
Analysis Software ◽  
Element Analysis ◽  
Modern Mass ◽  
The Mathematical Model

During the process of heteroepitaxial growth, if the lattice constant of the growing film differs from that of the substrate, the wafer surface bows, regardless of whether the lattice mismatch occurs or not. As the growth in large-scale wafers speeds up, bowing effects are becoming more and more important. Wafer bowing has a direct impact on the yield in modern mass-production compound semiconductor industries. By using finite element analysis software, the bowing deformation of the GaN wafer on sapphire substrate can be studied. This paper summarizes the causes of bowing deformation, builds the mathematical model, and deduces the relation equation of the wafer bowing. The results show that epitaxial wafer bowing has a linear relationship with the square of the diameter of the substrate but has little relationship with the thickness of the substrate. Moreover, the relation equation of the wafer bowing is also simplified finally.

Semiconductor self-assembled monolayers as selective contacts for efficient PiN perovskite solar cells

2019 ◽  
Vol 12 (1) ◽  
pp. 230-237 ◽  
Author(s):  
E. Yalcin ◽  
M. Can ◽  
C. Rodriguez-Seco ◽  
E. Aktas ◽  
R. Pudi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Organic Molecules ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Self Assembled Monolayers ◽  
Lead Iodide ◽  
Assembled Monolayers ◽  
Type Contact ◽  
Self Assembled ◽  
P Type

Herein, we studied the use of two different Self Assembled Monolayers (SAMs) made of semiconductor hole transport organic molecules to replace the most common p-type contact, PEDOT:PSS, in PiN methyl ammonium lead iodide perovskite solar cells (PSCs).

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