High-Quality Nitrogen-Doped Fluorinated Silicon Oxide Films Prepared by Temperature-Difference-Based Liquid-Phase Deposition

2003 ◽  
Vol 107 (46) ◽  
pp. 12700-12704 ◽  
Author(s):  
M. K. Lee ◽  
W. H. Shieh ◽  
C. M. Shih ◽  
K. W. Tung
Keyword(s):  
Liquid Phase ◽  
Temperature Difference ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Liquid Phase Deposition ◽  
High Quality ◽  
Nitrogen Doped ◽  
Fluorinated Silicon Oxide

Newly Developed Low-K and Low-Stress Fluorinated Silicon Oxide Utilizing Temperature-Difference Liquid-Phase Deposition Technology

1998 ◽  
Vol 511 ◽  
Author(s):  
Ching-Fa Yeh ◽  
Yueh-Chuan Lee ◽  
Su-Chen Lee
Keyword(s):  
Liquid Phase ◽  
Temperature Difference ◽  
Moisture Absorption ◽  
Silicon Oxide ◽  
Liquid Phase Deposition ◽  
High Concentration ◽  
Real Process ◽  
Fluorinated Silicon Oxide ◽  
Intermetal Dielectric ◽  
Low K

ABSTRACTTo meet the requirements of low-K and low-stress intermetal dielectric (IMD) for future ULSI devices, a novel temperature-difference liquid-phase deposition (TD-LPD) method is proposed. The deposition solution of supersaturated silicic acid with high concentration of fluorine can be achieved by raising deposition temperature larger than 15 °C from dissolution temperature (0 °C). Because fluorine atoms can easily be incorporated with the technique, TDLPD fluorine-doped SiO2 (FSG) exhibits low-K (∼3.4) and low-stress (∼40MPa) property. In this paper, to study the interaction between TD-LPD FSG and moisture, the FSG is annealed and moisture stressed repeatedly as in a real process. Since K is sensitive to moisture absorption, and the stress is sensitive to the dehydration reaction between Si-OH's, the both are monitored as indices. A feasible mechanism is proposed to explain the variation in K/stress during annealing and boiling cycles.

Surface modification of spin-on-glass film by liquid-phase deposition of fluorinated silicon oxide

2001 ◽  
Vol 392 (1) ◽  
pp. 107-112
Author(s):  
Tetsuya Homma ◽  
Hiroyasu Kondo ◽  
Kazuaki Inohara ◽  
Masahiro Nomoto ◽  
Masaya Sakamoto ◽  
...  
Keyword(s):  
Surface Modification ◽  
Liquid Phase ◽  
Silicon Oxide ◽  
Glass Film ◽  
Liquid Phase Deposition ◽  
Fluorinated Silicon Oxide

Deposition of Metal Oxide Films at Liquid−Liquid Interface by the Liquid Phase Deposition Method

2008 ◽  
Vol 112 (35) ◽  
pp. 13535-13539 ◽  
Author(s):  
Shigehito Deki ◽  
Akiyoshi Nakata ◽  
Yasuyuki Sakakibara ◽  
Minoru Mizuhata
Keyword(s):  
Liquid Phase ◽  
Metal Oxide ◽  
Oxide Films ◽  
Liquid Interface ◽  
Liquid Phase Deposition ◽  
Deposition Method ◽  
Metal Oxide Films
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